c2412fc-gr1 Thermally-Enhanced High Power RF LDMOS FET 1 W, 28 V, 23 24 MHz Description The is a 1-watt LDMOS FET with an asymmetric design, intended for use in multi-stantdard cellular power amplifi er applications in the 23 to 24 MHz frequency band. Features include dual-path design, input and output matching, high gain and a thermally-enhanced package with earless fl ange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average Ratio, (db) Single-carrier WCDMA Drive-up V GS(peak) = 1.5 V, ƒ = 24 MHz 3GPP WCDMA signal, ergoqhgorgn' 24 1 db PAR, 3.84 MHz bandwidth qpjgfq4po5g 12 8 4 PAR @.1% CCDF Efficiency - -4-6 25 3 35 4 45 5 Average Output Power (dbm) 6 4 Package H-37248C-4 Features Broadband internal input and output matching Asymmetric Doherty design - Main: = 4 W Typ - Peak: = 6 W Typ Typical Pulsed CW performance, 24 MHz, 28 V, µsec pulse width, 1% duty cycle (Doherty confi guration) - Output power at = 34 W - Output power at P 3dB = 81 W - Effi ciency = 53% - = 15.7 db Capable of handling 1:1 VSWR @28 V, 8 W (CW) output power Integrated ESD protection Human Body Model class 1C (per ANSI/ESDA/ JEDEC JS-1) Low thermal resistance Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture) V DD = 28 V, I DQ = 23 ma, V GS(PEAK) = 1.5 V, P OUT = 15 W avg, ƒ = 24 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 1 db @.1% CCDF Characteristic Symbol Min Typ Max Unit G ps 14.8 15.5 db Drain Efficiency D 43 45 % Adjacent Channel Power Ratio ACPR 28 26 dbc Output PAR@.1% CCDF OPAR 7. 7.6 db All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Rev. 2, 18-1-4
2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = V, I DS = 1 ma V( BR)DSS 65 V Drain Leakage Current V DS = 28 V, V GS = V I DSS 1 µa V DS = 63 V, V GS = V I DSS 1 µa Gate Leakagte Current V GS = 1 V, V DS = V I GSS 1 µa On-State Resistance (Main) V GS = 1 V, V DS =.1 V R DS(on). (Peak) V GS = 1 V, V DS =.1 V R DS(on).15 Operating Gate Voltage (Main) V DS = 28 V, I DQ = 15 ma V GS 2.7 V (Peak) V DS = 28 V, I DQ = ma V GS 1.5 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS 6 to +1 V Junction Temperature T J 225 C Storage Temperature Range T STG 65 to +15 C Thermal Characteristics T CASE = 7 C, 15.8 W (CW), 28 V, = 24 ma I DQ, 1.5 V V GS(peak), 235 MHz Characteristic Symbol Value Unit Thermal Resistance (Main) R JC 1.7 C/W (Peak) R JC 1.4 C/W Ordering Information Type and Version Order Code Package Shipping V1 R -V1-R H-37248C-4, PP, earless Tape & Reel, 5 pcs V1 R2 -V1-R2 H-37248C-4, PP, earless Tape & Reel, 25 pcs Rev. 2, 18-1-4
c2412fc-gr2 c2412fc-gr3 c2412fc-gr4 c2412fc-gr5 3 Typical RF Performance (data taken in production test fixture) -1 Single-carrier WCDMA Drive-up V GS(peak) = 1.5V, ƒ = 24 MHz 3GPP WCDMA signal, PAR = 1 db, BW = 3.84 MHz 6 Single-carrier WCDMA Broadband V GS(peak) = 1.5 V, P OUT = 41.76 dbm, 3GPP WCDMA signal, PAR = 1 db 6 ACP Up, ACP Low (dbc) - -3-4 -5-6 ACPU ACPL Efficiency -7 25 3 35 4 45 5 5 4 3 1 (db) 18 5 Efficiency 4 14 3 12 215 225 235 245 255 Average Output Power (dbm) Frequency (MHz) ACP Low, ACP Up (dbc) -1-15 - -25-3 -35 Single-carrier WCDMA Broadband V GS(peak) = 1.5 V, P OUT = 41.76 dbm, 3GPP WCDMA signal, PAR = 1 db ACPU ACPL IRL -1-15 - -25-3 -4-35 215 225 235 245 255 Frequency (MHz) -5 Return Loss (db) (db) 19 18 17 15 14 CW Performance V GS(peak) = 1.5 V 23 MHz 235 MHz 24 MHz 23 MHz Eff 235 MHz Eff 24 MHz Eff 13 29 33 37 41 45 49 53 Output Power (dbm) 7 6 5 4 3 1 Rev. 2, 18-1-4
c2412fc-gr7 4 Typical RF Performance (cont.) CW Performance at selected V DD I DQ(main) = 23 ma, V GS(peak) = 1.5 V ƒ = 24 MHz CW Performance Small Signal V GS(peak) = 1.5V (db) 19 18 17 15 14 24 V 28 V 32 V 24 V Eff 28 V Eff 32 V Eff 7 6 5 4 3 1 (db) 18 14 12 1 8 6 4 IRL -1-12 -14 - -18 - -22-24 Input Return Loss (db) 13 29 33 37 41 45 49 53 2 215 225 235 245 255 c2412fc-gr6-26 Output Power (dbm) Frequency (MHz) Load Pull Performance, Doherty Configuration Main Side Pulsed CW` signal: µs, 1% duty cycle, V DD = 28 V, I DQ = 24 ma, class AB Freq [MHz] Zs Zl Max Output Power [db] [dbm] [W] D [%] Zl Max Drain Efficiency [db] [dbm] 23 12.95 j25.61 7.27 j9.24 18.7 46.81 48 54.9 1.89 j3.58.6 45.4 34 63.7 235 19.55 j24.45 7.18 j9.73 18.3 46.76 47 53.3 1.64 j3.34.5 45.2 33 63.3 24 24.79 j25.22 7.26 j9.51 18.6 46.7 47 54.1 9.41 j2.55.7 44.9 31 63.1 Peak Side Pulsed CW signal: µs, 1% duty cycle, V DD = 28 V, V DGS(peak) = 1,4 ma, class C Max Output Power Max Drain Efficiency Freq [MHz] Zs Zl [db] [dbm] P 3dB [W] D [%] Zl [db] [dbm] P 3dB [W] D [%] 23 8.5 j15.45 3.77 j6. 14.5 48.67 74 59.2 7.27 j.8 15.6 45.8 38 68.9 235 12.98 j14.49 3.53 j6.59 14. 48.58 72 56 6.5 j.44 15.2 46. 4 68.3 24.77 j15.19 3.73 j6.81 14. 48.4 69 54.5 5.26 j1.22 15.5 46.5 44 69.3 [W] D [%] Rev. 2, 18-1-4
pxac24 12 fc_cd _ 17-9 -26-bn 5 Reference Circuit, 23 24 MHz Reference Circuit Assembly DUT Test Fixture Part No. V1 LTA/ V1 PCB Rogers 435,.58 mm [. ] thick, 2 oz. copper, r = 3.66 RO435, MIL RO435, MIL VDD VGS(main) C12 C14 R11 C15 C9 C8 C7 C21 C13 C1 R13 C2 RF_IN U1 C11 C C3 C4 RF_OUT C17 C5 VDD C18 R12 C6 VGS(peak) C19 C211 C212 C214 C213 _IN_2 _OUT_2 Reference circuit assembly diagram (not to scale) Components Information for Circuit Assembly Component Description Manufacturer P/N Input C11, C15, C, C18 Capacitor, 18 pf ATC ATC6F18JW25T C12, C13, C17 Capacitor,.5 pf ATC ATC6FR5CW25T C14, C19 Capacitor, 1 µf, 5 V Taiyo Yuden UMK325C7MM-T R11, R12 Resistor, 1 Panasonic Electronic Components ERJ-3GEYJ1V R13 Resistor, 5 Anaren C8A5Z4A U1 Hybrid coupler Anaren 1P63AS table continued next page Rev. 2, 18-1-4
H-37248-4_pd_1-1-12 6 Reference Circuit (cont.) Components Information for circuit assembly (cont.) Component Description Manufacturer P/N Output C1, C4, C6 Capacitor, 18 pf ATC ATC6F18JW25T C2 Capacitor,.5 pf ATC ATC6FR5CW25T C3 Capacitor, 5.1 pf ATC ATC6F5R1CW25T C5 Capacitor,.8 pf ATC ACT6FR8CW25T C7, C8, C9, C211, C212, C213 Capacitor, 1 µf, 5 V Taiyo Yuden UMK325C7MM-T C21, C214 Capacitor, 2 µf Panasonic Electronic Components ECA-2AHG221 Pinout Diagram (top view) Main Peak S D1 D2 Device 1 Device 2 Pin D1 D2 G1 G2 S Description Drain Device 1 (main) Drain Device 2 (peak) Gate Device 1 (main) Gate Device 2 (peak) Source (flange) G1 G2 Rev. 2, 18-1-4
C6665-A4-C446-1-27 : h-37248c-4_po_11-2- 7 Package Outline Specifications Package H-37248C-4 45 X 2.72 [.17] (8.89 [.35]) LC (5.8 [.]) 4.83±.51 [.19±.] D1 D2 9.78 [.385] C L (19.43 [.765]) R.51 +.38.13 R. +.15.5 G1 G2 3.81 [.15] 12.7 [.5] 3.78±.25 [.149±.1] 19.81±. [.78±.8] 1.2 [.4] SPH 1.57 [.62] S C L.57 [.81] Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm, alternate dimensions are inches 3. All tolerances ±.127 [.5] 4. Pins: D1, D2 drain, G1, G2 gate, S source (flange) 5. Lead thickness:.13 ±.5 [.5 ±.2] 6. Gold plating thickness: 1.14 ±.38 micron [45 ± 15 microinch] Rev. 2, 18-1-4
8 Revision History Revision Date Data Sheet Page Subjects (major changes at each revision) 1 14-11-12 Advance All Proposed specifi cations for new product development 2 17-1-4 Production All Information for production-released device, including fi rm specifi cations, operating performance, and reference circuit specifi cations 2 18-1-4 Production All Converted to Wolfspeed Data Sheet For more information, please contact: 46 Silicon Drive Durham, North Carolina, USA 2773 www.wolfspeed.com/rf Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.47.78 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright 14-18 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 2, 18-1-4 www.wolfspeed.com