Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) max. () = 10 V 0.80 Q g max. (nc) 9 Q gs (nc) 5.4 Q gd (nc) 15 Configuration Single S TO0AB G G DS D PChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free SnPb FEATURES Dynamic dv/dt rating Repetitive avalanche rated Available Pchannel Fast switching Available Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?9991 Note * This datasheet provides information about parts that are RoHScompliant and / or parts that are nonrohscompliant. For example, parts with lead (Pb) terminations are not RoHScompliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The TO0AB package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO0AB contribute to its wide acceptance throughout the industry. TO0AB IRF9630PbF SiHF9630E3 IRF9630 SiHF9630 ABSOLUTE MAXIMUM RATINGS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 00 V GateSource Voltage ± 0 Continuous Drain Current at 10 V T C = 5 C 6.5 I D T C = 100 C 4.0 A Pulsed Drain Current a I DM 6 Linear Derating Factor 0.59 W/ C Single Pulse Avalanche Energy b E AS 500 mj Repetitive Avalanche Current a I AR 6.4 A Repetitive Avalanche Energy a E AR 7.4 mj Maximum Power Dissipation T C = 5 C P D 74 W Peak Diode Recovery dv/dt c dv/dt 5.0 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to 150 Soldering Recommendations (Peak temperature) d for 10 s 300 C Mounting Torque 63 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting T J = 5 C, L = 17 mh, R g = 5, I AS = 6.5 A (see fig. 1). c. I SD 6.5 A, di/dt 0 A/μs, V DD, T J 150 C. d. 1.6 mm from case. 10 lbf in 1.1 N m S160754Rev. D, 0May16 1 Document Number: 91084
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 6 CasetoSink, Flat, Greased Surface R thcs 0.50 C/W Maximum JunctiontoCase (Drain) R thjc 1.7 SPECIFICATIONS (T J = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage = 0 V, I D = 50 μa 00 V Temperature Coefficient /T J Reference to 5 C, I D = 1 ma 0.4 V/ C GateSource Threshold Voltage (th) =, I D = 50 μa.0 4.0 V GateSource Leakage I GSS = ± 0 V ± 100 na = 00 V, = 0 V 100 Zero Gate Voltage Drain Current I DSS = 160 V, = 0 V, T J = 15 C 500 μa DrainSource OnState Resistance R DS(on) = 10 V I D = 3.9 A b 0.80 Forward Transconductance g fs = 50 V, I D = 3.9 A b.8 S Dynamic Input Capacitance C iss VGS = 0 V, 700 Output Capacitance C oss = 5 V, 00 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. 5 40 Total Gate Charge Q g I D = 6.5 A, 9 GateSource Charge Q gs = 10 V = 160 V, 5.4 nc GateDrain Charge Q gd see fig. 6 and 13 b 15 TurnOn Delay Time t d(on) 1 Rise Time t r V DD = 100 V, I D = 6.5 A, 7 TurnOff Delay Time t d(off) R g = 1, R D = 15, see fig. 10 b 8 ns Fall Time t f 4 Between lead, D Internal Drain Inductance L D 4.5 6 mm (0.5") from G package and center of Internal Source Inductance L S die contact 7.5 S nh Gate Input Resistance R g f = 1 MHz, open drain 0.6 3.7 DrainSource Body Diode Characteristics MOSFET symbol D Continuous SourceDrain Diode Current I S 6.5 showing the integral reverse Pulsed Diode Forward Current a G I SM p n junction diode 6 S A Body Diode Voltage V SD T J = 5 C, I S = 6.5 A, = 0 V b 6.5 V Body Diode Reverse Recovery Time t rr 00 300 ns Body Diode Reverse Recovery Charge Q rr T J = 5 C, I F = 6.5 A, di/dt = 100 A/μs b 1.9.9 μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle %. S160754Rev. D, 0May16 Document Number: 91084
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) I D, Drain Current (A) 91084_01 10 1 10 0 10 1 10 1 Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 10 0 10 1 4.5 V 0 µs Pulse Width T C = 5 C, DraintoSource Voltage (V) Fig. 1 Typical Output Characteristics, T C = 5 C R DS(on), DraintoSource On Resistance (Normalized) 91084_04 3.0.5.0 1.5 1.0 0.5 I D = 6.5 A = 10 V 0.0 60 40 0 0 0 40 60 80 100 10 140 160 T J, Junction Temperature ( C) Fig. 4 Normalized OnResistance vs. Temperature I D, Drain Current (A) 10 1 10 0 Top Bottom 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.5 V Capacitance (pf) 100 1000 800 600 400 00 = 0 V, f = 1 MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd C iss C oss 91084_0 10 1 10 0 10 1 10 1 0 µs Pulse Width T C = 150 C, DraintoSource Voltage (V) Fig. Typical Output Characteristics, T C = 150 C 91084_05 0 10 0 10 1, DraintoSource Voltage (V) C rss Fig. 5 Typical Capacitance vs. DraintoSource Voltage I D, Drain Current (A) 91084_03 10 1 10 0 4 5 C 150 C 0 µs Pulse Width = 50 V 5 6 7 8 9 10, GatetoSource Voltage (V), GatetoSource Voltage (V) 91084_06 0 16 1 8 4 I D = 6.5 A = 40 V = 100 V = 160 V For test circuit see figure 13 0 0 5 10 15 0 5 30 Q G, Total Gate Charge (nc) Fig. 3 Typical Transfer Characteristics Fig. 6 Typical Gate Charge vs. GatetoSource Voltage S160754Rev. D, 0May16 3 Document Number: 91084
I SD, Reverse Drain Current (A) 91084_07 10 1 150 C 5 C 10 0 10 1 = 0 V 0.5 1.5.5 3.5 4.5 V SD, SourcetoDrain Voltage (V) I D, Drain Current (A) 91084_09 7.0 6.0 5.0 4.0 3.0.0 1.0 0.0 5 50 75 100 15 T C, Case Temperature ( C) 150 Fig. 7 Typical SourceDrain Diode Forward Voltage Fig. 9 Maximum Drain Current vs. Case Temperature I D, Drain Current (A) 91084_08 10 3 5 10 5 10 5 1 5 0.1 0.1 5 Operation in this area limited by R DS(on) 1 T C = 5 C T J = 150 C Single Pulse 5 10 µs 100 µs 1 ms, DraintoSource Voltage (V) 10 ms 10 5 10 5 10 3 R G 10 V Pulse width 1 µs Duty factor 0.1 % R D D.U.T. V DD Fig. 10a Switching Time Test Circuit 10 % t d(on) t r t d(off) t f Fig. 8 Maximum Safe Operating Area 90 % Fig. 10b Switching Time Waveforms 10 Thermal Response (Z thjc ) 1 0.1 D = 0.5 0. 0.1 0.05 0.0 0.01 Single Pulse (Thermal Response) 10 10 5 10 4 10 3 10 0.1 1 10 P DM t 1 t Notes: 1. Duty Factor, D = t 1 /t. Peak T j = P DM x Z thjc T C 91084_11 t 1, Rectangular Pulse Duration (s) Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase S160754Rev. D, 0May16 4 Document Number: 91084
L I AS Vary t p to obtain required I AS R G D.U.T V DD I AS V DD 10 V t p 0.01 Ω A t p Fig. 1a Unclamped Inductive Test Circuit Fig. 1b Unclamped Inductive Waveforms E AS, Single Pulse Energy (mj) 91084_1c 100 1000 800 600 400 00 Top Bottom I D.9 A 4.1 A 6.5 A V DD = 50 V 0 5 50 75 100 15 150 Starting T J, Junction Temperature ( C) Fig. 1c Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 10 V Q G 1 V 0. µf 50 kω 0.3 µf Q GS Q GD D.U.T. V G Charge 3 ma I G I D Current sampling resistors Fig. 13a Basic Gate Charge Waveform Fig. 13c Gate Charge Test Circuit S160754Rev. D, 0May16 5 Document Number: 91084
www.vishay.com Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g I SD controlled by duty factor D D.U.T. device under test V DD Note Compliment NChannel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period = 10 V a D.U.T. l SD waveform Reverse recovery current Reapplied voltage Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt Body diode forward drop Inductor current V DD Ripple 5 % Note a. = 5 V for logic level and 3 V drive devices I SD Fig. 14 For PChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91084. S160754Rev. D, 0May16 6 Document Number: 91084
Package Information TO01 D L H(1) Q L(1) 1 E 3 M * b(1) Ø P A F DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.4 4.65 0.167 0.183 b 0.69 1.0 0.07 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.04 D 14.33 15.85 0.564 0.64 E 9.96 10.5 0.39 0.414 e.41.67 0.095 0.105 e(1) 4.88 5.8 0.19 0.08 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.40 0.64 J(1).41.9 0.095 0.115 L 13.36 14.40 0.56 0.567 L(1) 3.33 4.04 0.131 0.159 Ø P 3.53 3.94 0.139 0.155 Q.54 3.00 0.100 0.118 ECN: X150364Rev. C, 14Dec15 DWG: 6031 Note M* = 0.05 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM e b C e(1) J(1) ASE Package Picture Xi an Revison: 14Dec15 1 Document Number: 6654
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