ST W, 28 V RF Power LDMOS transistor from HF to 1.6 GHz. Datasheet. Features. Applications. Description

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Transcription:

Datasheet 10 W, 28 V RF Power LDMOS transistor from HF to 1.6 GHz Features Order code F REQ V DD P OUT (typ.) Gain N D ST16060 930 MHz 28 V 12 W 21 db 63% MM High efficiency and linear gain operations Integrated ESD protection Large positive and negative gate / source voltage range In compliance with the 2002/95/EC European directive Applications Telecom and wideband communication Industrial, scientific and medical Avionics Description The ST16010 is a 10 W, 28 V LDMOS transistor designed for wideband radio, Avionics and ISM applications at frequencies up to 1.6 GHz. Product status link ST16010 Product summary Order code Marking Package ST16010 ST16010 MM DS12651 - Rev 2 - October 2018 For further information contact your local STMicroelectronics sales office. www.st.com

Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit BV DSS Drain-source voltage 90 V V GS Gate-source voltage -8 / +10 V V DD Drain voltage operating voltage 32 V T STG Storage temperature range -65 to +150 C T J Junction temperature +200 C Table 2. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case, T J = +200 C, DC test 3 C/W Table 3. ESD protection Symbol Parameter Class HBM Human body model (per JESD22-A114) 2 DS12651 - Rev 2 page 2/10

Electrical characteristics 2 Electrical characteristics (T C = 25 C unless otherwise specified). Table 4. Static (per side) Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero-gate voltage drain current V GS = 0 V, I D = 1 ma 90 V V GS = 0 V, V DS = 75 V 1 µa I GSS Gate-body leakage current V DS = 0 V, V GS = 10 V 250 na V GS(th) Gate threshold voltage V DS = 10 V, I D = 50 µa 2.1 V V DS(on) Static drain-source onresistance V GS = 1 V, I D = 0.1 A 0.11 V G fs Transconductance V DS = 10 V, I D = 1 A 1 S C iss Common source input capacitance 15 C oss Common source output capacitance V GS = 0 V, V DD = 28 V, F REQ = 1 MHz 5.7 pf C rss Common source feedback capacitance 0.4 Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit P OUT Output power V DD = 28 V, I DQ = 0.1 A, - 12 - W Gain Efficiency Power gain Drain efficiency F REQ = 930 MHz, P in = 0.095 W, PW = 10 µs, DC = 10% - - 21 63 - db % IMD3 3 rd order intermodulation - TBD - dbc VSWR Load mismatch @ P OUT = 10 W all phases - 20:1 - Table 6. Dynamic Frequency (MHz) Input impedance Z IN Drain load impedance Z DL 700 1000 1500 2000 2500 3000 3600 TBD TBD DS12651 - Rev 2 page 3/10

Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power gain and efficiency versus output power (f =930MHz, V DD = 28V, I DQ = 0.1A) Gain (db) 25 24 23 22 21 20 19 18 GADG220620181120P 17 0 2 4 6 8 10 12 90 80 70 60 50 40 30 20 Efficiency (%) 10 P TOT (W) Figure 2. Capacitances versus drain - source voltage C GIPG220620181142CVR (pf) 18 16 C ISS 14 12 10 8 C OSS 6 f = 1 MHz 4 2 C RSS 0 0 5 10 15 20 25 30 35 V DS (V) Figure 3. Drain - source current versus gate - source voltage (V DS = 10V) I D (A) 3.5 GADG220620181133RID 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 V GS (V) DS12651 - Rev 2 page 4/10

Test circuits 3 Test circuits Figure 4. Circuit layout DS12651 - Rev 2 page 5/10

Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 0.2x0.16 2L gull wing MM package information Figure 5. 0.2x0.16 2L gull wing MM package outline 00418518_A DS12651 - Rev 2 page 6/10

0.2x0.16 2L gull wing MM package information Table 7. 0.2x0.16 2L gull wing MM package mechanical data Dim. mm Min. Typ. Max. A 3.81 5.080 6.35 B 3.937 4.064 4.191 C 1.152 1.279 1.406 D 7.237 7.364 7.491 E 0.178 0.203 0.228 F 1.397 1.524 1.651 G 0.655 0.792 0.919 H 0.521 0.639 0.766 I 0.381 0.508 0.636 CH1 0.639 CH2 0.762 DS12651 - Rev 2 page 7/10

Revision history Table 8. Document revision history Date Version Changes 22-Jun-2018 1 Initial release. 11-Oct-2018 2 Updated features in cover page. DS12651 - Rev 2 page 8/10

Contents Contents 1 Electrical ratings...2 2 Electrical characteristics...3 2.1 Electrical characteristics (curves)... 4 3 Test circuits...5 4 Package information...6 4.1 0.2 x 0.16 2L gull wing MM package information...6 Revision history...8 DS12651 - Rev 2 page 9/10

IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 2018 STMicroelectronics All rights reserved DS12651 - Rev 2 page 10/10