N-Channel Enhancement Mode Power MOSFET Description The PE6018 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It D can be used in a wide variety of applications. General Features V DS = 60V,I D =18A R DS(ON) < 14mΩ @ V GS =10V (Typ:10mΩ) R DS(ON) < 18mΩ @ V GS =4.V (Typ:1.mΩ) G S Schematic diagram Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high E AS 6018 Excellent package for good heat dissipation Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply Marking and pin assignment SOP-8 top view Absolute Maximum Ratings (T C = unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±0 V Drain Current-Continuous I D 18 A Drain Current-Continuous(T C =100 ) I D (100 ) 1 A Pulsed Drain Current I DM A Maximum Power Dissipation P D. W Page 1
Thermal Characteristic Thermal Resistance,Junction-to-Case (Note ) R θjc 0 /W Electrical Characteristics (TC= unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS V GS =0V I D =0μA 60 - V Zero Gate Voltage Drain Current I DSS V DS =60V,V GS =0V - - 1 μa Gate-Body Leakage Current I GSS V GS =±0V,V DS =0V - - ±100 na (Note ) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =0μA 1..0. V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =18A - 10 14 mω Forward Transconductance g FS V DS =10V,I D =10A 0 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 40 - PF V DS =1V,V GS =0V, Output Capacitance C oss - 10 - PF F=1.0MHz Reverse Transfer Capacitance - 146 - PF (Note 4) Switching Characteristics C rss Turn-on Delay Time t d(on) - 10.6 - ns Turn-on Rise Time t r V DD =0V, R D =8 A, - 9 - ns Turn-Off Delay Time t d(off) V GS =10V,R GEN =Ω - 6.6 - ns Turn-Off Fall Time - 4.8 - ns t f Total Gate Charge Q g - 0 - nc V DS =48V,I D =8A, Gate-Source Charge Q gs - 10.7 - nc V GS =4.V Gate-Drain Charge - 9.4 - nc Drain-Source Diode Characteristics Q gd V GS =4.V, I D =10A - 1. 18 mω Diode Forward Voltage (Note ) V SD V GS =0V,I S =10A - - 1. V Diode Forward Current (Note ) I S - - - 8 A Reverse Recovery Time t rr TJ = C, IF =8A - 18 - ns Reverse Recovery Charge Qrr di/dt = 100A/μs (Note) - 1.6 - nc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.. Surface Mounted on FR4 Board, t 10 sec.. Pulse Test: Pulse Width 00μs, Duty Cycle %. 4. Guaranteed by design, not subject to production. E AS condition:tj=,v DD =0V,V G =10V,L=0.mH,Rg=Ω Page
Test Circuit 1) E AS test Circuit ) Gate charge test Circuit ) Switch Time Test Circuit Page
Typical Electrical and Thermal Characteristics (Curves) Figure 1 Output Characteristics Normalized On-Resistance T J -Junction Temperature( ) Figure 4 Rdson-JunctionTemperature Rdson On-Resistance(Ω) ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure Transfer Characteristics Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Qg Gate Charge (nc) Figure Gate Charge I D - Drain Current (A) Figure Rdson- Drain Current Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward Page 4
Figure 7 Capacitance vs Vds T J -Junction Temperature( ) Figure 9 I D De-rating ID- Drain Current (A) Power Dissipation (w) Vds Drain-Source Voltage (V) Figure 8 Safe Operation Area T J -Junction Temperature ( ) Figure 10 Power De-rating r(t),normalized Effective Transient Thermal Impedance ID- Drain Current (A) 100 7 10 7 1.0 7 I DM =A ID =18A Operation in this area is limited by R DS (on). 100ms DC operation 10ms PW 10μs 100μs 0.1 7 Ta= C Single pulse When mounted on ceramic substrate (900mm 0.01 0.8mm) 1unit 0.1 7 1.0 7 10 7 100 1ms Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Page
SOP-8 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.0 1.70 0.0 0.069 A1 0.100 0.0 0.004 0.010 A 1.0 1.0 0.0 0.061 b 0.0 0.10 0.01 0.00 c 0.170 0.0 0.006 0.010 D 4.700.100 0.18 0.00 E.800 4.000 0.10 0.17 E1.800 6.00 0.8 0.44 e 1.70(BSC) 0.00(BSC) L 0.400 1.70 0.016 0.00 θ 0 8 0 8 Page 6