2V N-Channel MOSFET TMA18N2H,TMP18N2H FEATURES Fast switching 1% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA18N2H TO-22F A18N2H TMP18N2H TO-22 P18N2H Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol TO-22F Value TO-22 Unit Drain-Source Voltage (V GS = V) V DSS 2 V Continuous Drain Current I D 18 A Pulsed Drain Current (note1) I DM 72 A Gate-Source Voltage V GSS ±2 V Single Pulse Avalanche Energy (note2) E AS 34 mj Avalanche Current (note1) I AR 15 A Repetitive Avalanche Energy (note1) E AR 8.3 mj Power Dissipation (T C = 25ºC) P D 63.7 14 W Operating Junction and Storage Temperature Range T J, T stg -55~+15 ºC Thermal Resistance Parameter Symbol TO-22F Value TO-22 Unit Thermal Resistance, Junction-to-Case R thjc 1.96 1.2 Thermal Resistance, Junction-to-Ambient R thja 62.5 6 ºC/W V3. 1
TMA18N2H,TMP18N2H Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Value Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = 25µA 2 -- -- V Zero Gate Voltage Drain Current I DSS V DS = 2V, V GS = V, T J = 25ºC -- -- 5 V DS = 16V, V GS = V, T J = 125ºC -- -- 1 μa Gate-Source Leakage I GSS V GS = ±2V -- -- ±1 na Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25µA 2. -- 4. V Drain-Source On-Resistance (Note3) R DS(on) V GS = 1V, I D = 9A --.12.15 Ω Dynamic Input Capacitance C iss -- 1318 -- V GS = V, Output Capacitance C oss V DS = 25V, f = 1.MHz -- 18 -- Reverse Transfer Capacitance C rss -- 75 -- Total Gate Charge Q g -- 41 -- Gate-Source Charge Q gs V DD = 16V, I D = 18A, V GS = 1V -- 5.5 -- Gate-Drain Charge Q gd -- 19.5 -- pf nc Turn-on Delay Time t d(on) -- 24 -- Turn-on Rise Time t r V DD = 1V, I D = 18A, -- 45 -- Turn-off Delay Time t d(off) R G = 25 Ω -- 11 -- ns Turn-off Fall Time t f -- 95 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current I S -- -- 18 T C = 25 ºC Pulsed Diode Forward Current I SM -- -- 72 A Body Diode Voltage V SD T J = 25ºC, I SD = 18A, V GS = V -- -- 1.4 V Reverse Recovery Time t rr V GS = V,I S = 18A, -- 23 -- ns Reverse Recovery Charge Q rr di F /dt =1A /μs -- 1.8 -- μc Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS = 15A, V DD = 5V, R G = 25 Ω, Starting T J = 25 ºC 3. Pulse Test: Pulse width 3μs, Duty Cycle 1% V3. 2
Typical Characteristics T J = 25ºC, unless otherwise noted TMA18N2H,TMP18N2H Figure 1. Output Characteristics (T J = 25ºC) Figure 2. Body Diode Forward Voltage I D, Drain Current (A) I D, Drain Current (A) I D, Drain Current (A) 9 8 7 6 5 4 3 2 1 2 18 16 14 12 1 8 6 4 2 2 4 6 8 1 12 14 16 18 2 Figure 3. Drain Current vs. Temperature 25 5 75 1 125 15 6 5 4 3 2 1 2V 1V 8V 7V 6V 5V V DS, Drain-to-Source Voltage (V) T C, Case Temperature (A) Figure 5. Transfer Characteristics T J = 25ºC T J = 15ºC 2 4 6 8 1 IS, Source Current (A) R DS(on), On-Resistance (Normalized) BV DSS (Normalized) 1 2 T J = 15ºC 1 1 T J = 25ºC 1 1-1.2.4.6.8 1 1.2 1.4 V SD, Source-to-Drain Voltage (V) Figure 4. BV DSS Variation vs. Temperature 1.15 V GS = V I D = 25uA 1.1 1.5 1.95.9-5 5 1 15 T J, Junction Temperature (ºC) Figure 6. On-Resistance vs. Temperature 3 V GS = 1V I D = 9A 2.5 2 1.5 1.5-5 5 1 15 V GS, Gate-to-Source Voltage (V) T J, Junction Temperature (ºC) V3. 3
Typical Characteristics T J = 25ºC, unless otherwise noted TMA18N2H,TMP18N2H Figure 7. Capacitance Figure 8. Gate Charge 1 4 12 Capacitance (pf) 1 3 1 2 1 1 V GS = V f = 1MHz C iss C oss C rss 2 4 6 VGS, Gate-to-Source Voltage (V) 1 8 6 4 2 V DD = 4V V DD = 1V V DD = 16V 1 2 3 4 5 V DS, Drain-to-Source Voltage (V) Q g, Total Gate Charge (nc) Figure 9. Transient Thermal Impedance TO-22F Figure 1. Transient Thermal Impedance TO-22 1 1 1 1 Z thjc, Thermal Impedance (K/W) 1 1-1 1-2 1-3 D =.5 D =.2 D =.1 D =.5 D =.2 D =.1 Single Pulse 1-6 1-5 1-4 1-3 1-2 1-1 1 1 1 Z thjc, Thermal Impedance (K/W) 1 1-1 1-2 1-3 1-4 D =.5 D =.2 D =.1 D =.5 D =.2 D =.1 Single Pulse 1-6 1-5 1-4 1-3 1-2 1-1 1 1-7 Tp, Pulse Width (s) T p, Pulse Width (s) V3. 4
Figure A:Gate Charge Test Circuit and Waveform TMA18N2H,TMP18N2H Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform V3. 5
TMA18N2H,TMP18N2H TO-22 V3. 6
TMA18N2H,TMP18N2H TO-22F V3. 7
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