UNISONIC TECHNOLOGIES CO., LTD 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N50 is a N-channel enhancement mode power MOSFET using UTC s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance and high switching speed. This device is generally applied in active power factor correction and high efficient switched mode power supplies. FEATURES TO-3P TO-220F TO-220F2 TO-220 TO-220F TO-247 * R DS(ON) 0.32Ω @ V GS =0V, I D =9.0A * High switching speed * 00% avalanche tested SYMBOL TO-263 ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 2 3 Packing 8N50L-TA3-T 8N50G-TA3-T TO-220 G D S Tube 8N50L-TF3-T 8N50G-TF3-T TO-220F G D S Tube 8N50L-TF-T 8N50G-TF-T TO-220F G D S Tube 8N50L-TF2-T 8N50G-TF2-T TO-220F2 G D S Tube 8N50L-T3P-T 8N50G-T3P-T TO-3P G D S Tube 8N50L-T47-T 8N50G-T47-T TO-247 G D S Tube 8N50L-TQ2-T 8N50G-TQ2-T TO-263 G D S Tube 8N50L-TQ2-R 8N50G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source of 8 Copyright 208 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS (T C = 25 С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 500 V Gate-Source Voltage V GSS ±30 V Drain Current Continuous I D 8 A Pulsed (Note 2) I DM 72 A Avalanche Current (Note 2) I AR 3 A Avalanche Energy Single Pulsed (Note 3) E AS 845 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 3.2 V/ns TO-220/TO-263 235 W TO-220F/TO-220F Power Dissipation TO-220F2 P D 40 W TO-3P 380 W TO-247 357 W Junction Temperature T J +50 С Storage Temperature T STG -55 ~ +50 С Notes:. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L=0mH, I AS =3A, V DD =50V, R G =25 Ω, Starting T J = 25 C 4. I SD 8A, di/dt 200A/μs, V DD BV DSS, Starting T J = 25 C THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT TO-220/TO-220F TO-220F/TO-220F2 62.5 C/W Junction to Ambient TO-263 θ JA TO-3P 30 C/W TO-247 40 C/W TO-220/TO-263 0.53 C/W TO-220F/TO-220F Junction to Case TO-220F2 θ Jc 3.3 C/W TO-3P 0.33 C/W TO-247 0.35 C/W UNISONIC TECHNOLOGIES CO., LTD 3 of 8
ELECTRICAL CHARACTERISTICS (T J =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V, I D =250µA 500 V Drain-Source Leakage Current I DSS V DS =500V, V GS =0V µa Gate-Source Leakage Current Forward V GS = 30 V, V DS = 0 V 00 I GSS Reverse V GS = -30 V, V DS = 0 V -00 na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS, I D =250µA 2.0 4.0 V Drain-Source On-State Resistance R DS(ON) V GS =0V, I D =9.0A 0.32 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 2550 pf Reverse Transfer Capacitance C RSS 47 pf Output Capacitance C OSS V DS=25V,V GS=0V,f=.0MHz 330 pf SWITCHING PARAMETERS Total Gate Charge (Note ) Q G 70 nc V DS =00V, V GS =0V, I D =8A, Gate to Source Charge Q GS 3 nc I D =ma (Note, 2) Gate to Drain Charge Q GD 25 nc Turn-ON Delay Time (Note ) t D(ON) 40 ns Rise Time t R V DS =00V, V GS =0V, I D =8A, 38 ns Turn-OFF Delay Time t D(OFF) R G =25Ω (Note, 2) 200 ns Fall-Time t F 50 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current I S 8 A Maximum Pulsed Drain-Source Diode Forward Current I SM 72 A Drain-Source Diode Forward Voltage (Note ) V SD I S =8A, V GS =0V.4 V Body Diode Reverse Recovery Time (Note ) t rr I S =8A, V GS =0V, 380 ns Body Diode Reverse Recovery Charge Q rr di F /dt=00a/µs 5.4 μc Notes:. Pulse Test : Pulse width 300μs, Duty cycle 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD 4 of 8
TEST CIRCUITS AND WAVEFORMS DUT + R G V DS - L I SD V GS V DD Driver Same Type as DUT dv/dt controlled by R G I SD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms V GS (Driver) Gate Pulse Width D= Gate Pulse Period 0V I SD (DUT) I FM, Body Diode Forward Current di/dt I RM Body Diode Reverse Current V DS (DUT) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD 5 of 8
TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms V DS BV DSS E AS = 2 2 LIAS BV DSS -V DD R G I D L BV DSS I AS 0V I D (t) t P DUT V DD V DD V DS (t) Unclamped Inductive Switching Test Circuit t P Time Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 6 of 8
TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD 7 of 8
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD 8 of 8