MJE82G SWITCHMODE NPN Bipolar Power Traistor For Switching Power Supply Applicatio The MJE82G have an applicatio specific stateoftheart die designed for use in 22 V line operated Switchmode Power supplies and electronic light ballasts. Features Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain h FE Fast Switching No Coil Required in Base Circuit for TurnOff (No Current Tail) Tight Parametric Distributio are Coistent LottoLot Standard TO22 These Devices are PbFree and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Sustaining Voltage V CEO 45 Vdc CollectorEmitter Breakdown Voltage V CES Vdc EmitterBase Voltage V EBO 9. Vdc Collector Current Base Current Continuous Peak (Note ) Continuous Peak (Note ) Total Device Dissipation @ T C = 25 C Derate above 25 C I C 2. I CM 5. I B. I BM 2. P D 5.4 Adc Adc W W/ C Operating and Storage Temperature T J, T stg 65 to 5 C THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 2.5 C/W Thermal Resistance, JunctiontoAmbient R JA 62.5 C/W Maximum Lead Temperature for Soldering Purposes /8 from Case for 5 Seconds T L 26 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditio is not implied. Extended exposure to stresses above the Recommended Operating Conditio may affect device reliability.. Pulse Test: Pulse Width = 5 ms, Duty Cycle %. POWER TRANSISTOR 2. AMPERES VOLTS 5 WATTS 2 3 TO22AB CASE 22A9 STYLE MARKING DIAGRAM MJE82G AY WW A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping MJE82G TO22 (PbFree) 5 Units / Rail *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2 April, 2 Rev. 7 Publication Order Number: MJE82/D
MJE82G ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I C = ma, L = 25 mh) V CEO(sus) 45 Vdc Collector Cutoff Current (V CE = Rated V CEO, I B = ) I CEO Adc Collector Cutoff Current (V CE = Rated V CES, V EB = ) T C = 25 C Collector Cutoff Current (V CE = 8 V, V EB = ) T C = 25 C Emitter Cutoff Current (V EB = 9. Vdc, I C = ) ON CHARACTERISTICS BaseEmitter Saturation Voltage BaseEmitter Saturation Voltage CollectorEmitter Saturation Voltage (I C =.4 Adc, I B = 4 madc) (I C =. Adc, I B =.2 Adc) DC Current Gain (I C =.2 Adc, V CE = 5. Vdc) DC Current Gain (I C =.4 Adc, V CE =. Vdc) DC Current Gain (I C =. Adc, V CE =. Vdc) DC Current Gain (I C = madc, V CE = 5. Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (I C =.2 Adc, V CE = Vdc, f =. MHz) Output Capacitance (V CB = Vdc, I E =, f =. MHz) Input Capacitance (V EB = 8. V) Dynamic Saturation: determined. and 3. after rising I B reach.9 final I B (see Figure 8) (I C =.4 Adc, I B = 4 madc) (I C =. Adc, I B =.2 Adc) I C =.4 A I B = 4 ma V CC = 3 V I C =. A I B =.2 A V CC = 3 V. 3.. 3. 2. Proper strike and creepage distance must be provided. I CES 5 Adc I EBO Adc V BE(sat) V CE(sat) h FE 4 6. 5..825.92.2.2.25.3 27 7 2 8. 8. 2..25.5.5.5.6 34 Vdc Vdc f T 3 MHz C ob 35 6 pf C ib 4 6 pf V CE(dsat) 3.5 8..5 3.8 8. 4 2. 7. Vdc 2
MJE82G ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.C. %, Pulse Width = 2 ) TurnOn Time I C =.4 Adc t on 2 3 I B = 4 madc 3 I B2 =.2 Adc TurnOff Time V CC = 3 V t off TurnOn Time TurnOff Time I C =. Adc I B =.2 Adc I B2 =.5 Adc V CC = 3 V SWITCHING CHARACTERISTICS: Inductive Load (V clamp = 3 V, V CC = 5 V, L = 2 H) Fall Time I C =.4 Adc, I B = 4 madc, I B2 =.2 Adc Storage Time Crossover Time Fall Time Storage Time Crossover Time Fall Time Storage Time Crossover Time I C =. Adc, I B =.2 Adc, I B2 =.5 Adc I C =.4 Adc, I B = 5 madc, I B2 = 5 madc t on t off t si t si t si.2.5 85 95.7 2. 25 2.7.8 2.7 2.25 2 25 4 85 2.2 2.5 4 22 2.5 5 2.5 2.25 2 75 2.75 3 2 3. 25 3
MJE82G TYPICAL STATIC CHARACTERISTICS V CE = V V CE = 5 V h FE, DC CURRENT GAIN h FE, DC CURRENT GAIN T J = - 2 C........ Figure. DC Current Gain @ Volt.... Figure 2. DC Current Gain @ 5 Volts 2. V CE, VOLTAGE (VOLTS).5 A 2 A V CE, VOLTAGE (VOLTS) A.4 A I C =.2 A............. I B, BASE CURRENT (ma).. I C /I B = Figure 3. Collector Saturation Region Figure 4. CollectorEmitter Saturation Voltage. V BE, VOLTAGE (VOLTS)..9.8.7.6.5 I C /I B =.4........ C, CAPACITANCE (pf) C ib f = MHz V CE, COLLECTOR-EMITTER (VOLTS) C ob Figure 5. BaseEmitter Saturation Region Figure 6. Capacitance 4
MJE82G t, TIME () 25 2 5 5 V CC = 3 V PW = 2 I C /I B = TYPICAL SWITCHING CHARACTERISTICS (I B2 = I C /2 for all switching).4.6.8..2.4.6.8 2. t, TIME () 45 4 35 3 25 2 5 5 I C /I B = V CC = 3 V PW = 2.4.6.8..2.4.6.8 2. 2. Figure 7. Resistive Switching, t on Figure 8. Resistive Switching, t off t, TIME () 3 25 2 5 5 V CC = 5 V V Z = 3 V L C = 2 H I C /I B =.4.6.8..2.4.6.8 2. t si, STORAGE TIME () 25 2 5 5 I C =.4 A I C = A V CC = 5 V V Z = 3 V L C = 2 H 5 7 9 3 5 5 h FE, FORCED GAIN Figure 9. Inductive Storage Time, t si Figure. Inductive Storage Time t, TIME () 6 5 4 3 2 V CC = 5 V V Z = 3 V L C = 2 H.4.6.8..2.4.6.8 2. Figure. Inductive Switching, and, t, TIME () 45 4 35 3 25 2 5 5 V CC = 5 V V Z = 3 V L C = 2 H.4.6.8..2.4.6.8 2. Figure 2. Inductive Switching, and, I C /I B = 5
MJE82G, FALL TIME () 8 6 4 2 8 I C =.4 A 6 5 6 7 8 9 2 3 4 5 h FE, FORCED GAIN TYPICAL SWITCHING CHARACTERISTICS (I B2 = I C /2 for all switching) V CC = 5 V V Z = 3 V L C = 2 H I C = A T C, CROSS OVER TIME () 25 23 2 9 7 5 3 9 7 I C =.4 A I C = A V CC = 5 V V Z = 3 V L C = 2 H 5 5 6 7 8 9 2 3 4 5 5 h FE, FORCED GAIN Figure 3. Inductive Fall Time Figure 4. Inductive Crossover Time... 5 ms DC (MJE82) ms GUARANTEED SAFE OPERATING AREA INFORMATION 5. V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Forward Bias Safe Operating Area 2.5 2..5..5 T C 25 C I C /I B 4 L C = 5 H V -.5 V. 2 4 6 8 2 2 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) V BE(off) =.5 V Figure 6. Reverse Bias Switching Safe Operating Area POWER DERATING FACTOR..8.6.4.2 THERMAL DERATING SECOND BREAKDOWN DERATING. 2 4 6 8 2 4 6 T C, CASE TEMPERATURE ( C) Figure 7. Forward Bias Power Derating There are two limitatio on the power handling ability of a traistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the traistor that must be observed for reliable operation; i.e., the traistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T C = 25 C; T J (pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to % but must be derated when T C > 25 C. Second breakdown limitatio do not derate the same as thermal limitatio. Allowable current at the voltages shown on Figure 5 may be found at any case temperature by using the appropriate curve on Figure 7. T J (pk) may be calculated from the data in Figures 2. At any case temperatures, thermal limitatio will reduce the power thaan be handled to values less the limitatio imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turnoff with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 6). This rating is verified under clamped conditio so that the device is never subjected to an avalanche mode. 6
MJE82G VOLTS 5 4 3 2 - -2-3 V CE dyn 9% I B dyn 3-4 3 I B -5 2 3 TIME 4 5 6 7 8 Figure 8. Dynamic Saturation Voltage Measurements 9 8 7 I C 9% I C t si 6 T C % I C 5 4 3 2 V CLAMP I B % V CLAMP 9% I B 2 3 4 5 6 7 8 TIME Figure 9. Inductive Switching Measurements +5 V F 5 3 V 3 V MTP8P F V CE PEAK I C PEAK + V MPF93 MPF93 MUR5 MTP8P Rb A I out V CE I B I B COMMON -V off 5 5 F 5 3 V MJE2 MTP2N Rb2 F V(BR)CEO(sus) L = H RB2 = V CC = 2 VOLTS I C (pk) = ma I B 2 INDUCTIVE SWITCHING L = 2 H RB2 = V CC = 5 VOLTS RB SELECTED FOR DESIRED I B RBSOA L = 5 H RB2 = V CC = 5 VOLTS RB SELECTED FOR DESIRED I B r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)..5.2 Table. Inductive Load Switching Drive Circuit TYPICAL THERMAL RESPONSE...5 P R JC (t) = r(t) R JC (pk) R JC = C/W MAX.2 D CURVES APPLY FOR t SINGLE PULSE POWER PULSE TRAIN t 2 SHOWN READ TIME AT t DUTY CYCLE, D = t /t 2 T J(pk) - T C = P (pk) R JC (t)....... t, TIME (ms) Figure 2. Typical Thermal Respoe (Z JC (t)) for MJE82 7
MJE82G PACKAGE DIMENSIONS TO22AB CASE 22A9 ISSUE AF H Q Z L V G B 4 2 3 N D A K F T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.57.62 4.48 5.75 B.38.45 9.66.28 C.6.9 4.7 4.82 D.25.35.64.88 F.42.6 3.6 4.9 G.95.5 2.42 2.66 H..55 2.8 3.93 J.4.25.36.64 K.5.562 2.7 4.27 L.45.6.5.52 N.9.2 4.83 5.33 Q..2 2.54 3.4 R.8. 2.4 2.79 S.45.55.5.39 T.235.255 5.97 6.47 U..5..27 V.45 ---.5 --- Z ---.8 --- 2.4 STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, coequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specificatio can and do vary in different applicatio and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does noonvey any licee under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicatio intended to support or sustain life, or for any other application in which the failure of the SCILLC producould create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: 33675275 or 8344386 Toll Free USA/Canada Fax: 33675276 or 83443867 Toll Free USA/Canada Email: orderlit@oemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 835773385 8 ON Semiconductor Website: www.oemi.com Order Literature: http://www.oemi.com/orderlit For additional information, please contact your local Sales Representative MJE82/D