FDP2614 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application PDP application Description November 2007 62A, 200V, R DS(on) = 22.9mΩ @V GS = V Fast switching speed Low gate charge High performance trench technology for extremely low R DS(on) High power and current handling capability RoHS compliant D tm G D S TO-220 G S Absolute Maximum Ratings Symbol Parameter Ratings Unit V DS Drain-Source Voltage 200 V V GS Gate-Source Voltage ± 30 V I D Drain Current - Continuous (T C = 25 C) - Continuous (T C = 0 C) I DM Drain Current - Pulsed (Note 1) 62 39.3 see Figure 9 E AS Single Pulsed Avalanche Energy (Note 2) 145 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 C) - Derate above 25 C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds 260 2.1 A A A W W/ C 300 C Thermal Characteristics Symbol Parameter Min. Max. Unit R θjc Thermal Resistance, Junction-to-Case -- 0.48 C/W R θja Thermal Resistance, Junction-to-Ambient -- 62.5 C/W 2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP2614 FDP2614 TO-220 - - 50 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = 250μA, T J = 25 C 200 -- -- V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient I DSS Zero Gate Voltage Drain Current V DS = 200V, V GS = 0V V DS = 200V, V GS = 0V, T J = 125 C I D = 250μA, Referenced to 25 C -- 0.2 -- V/ C I GSSF Gate-Body Leakage Current, Forward V GS = 30V, V DS = 0V -- -- 0 na I GSSR Gate-Body Leakage Current, Reverse V GS = -30V, V DS = 0V -- -- -0 na On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS, I D = 250μA 3.0 4.0 5.0 V R DS(on) Static Drain-Source On-Resistance V GS = V, I D = 31A -- 22.9 27 mω g FS Forward Transconductance V DS = V, I D = 31A (Note 4) -- 72 -- S Dynamic Characteristics C iss Input Capacitance -- 5435 7230 pf C oss Output Capacitance V DS = 25V, V GS = 0V f = 1.0MHz -- 505 675 pf C rss Reverse Transfer Capacitance -- 1 165 pf Switching Characteristics t d(on) Turn-On Delay Time -- 77 165 ns t r Turn-On Rise Time V DD = 0V, I D = 62A V GS = V, R GEN = 25Ω -- 284 560 ns t d(off) Turn-Off Delay Time -- 3 220 ns t f Turn-Off Fall Time (Note 4, 5) -- 162 335 ns Q g Total Gate Charge -- 76 99 nc Q gs Gate-Source Charge V DS = 0V, I D = 62A V GS = V -- 35 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 18 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 62 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 186 A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 62A -- -- 1.2 V t rr Reverse Recovery Time V GS = 0V, I S = 62A -- 145 -- ns Q rr Reverse Recovery Charge di F /dt =0A/μs (Note 4) -- 0.81 -- μc -- -- -- -- 500 μa μa Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, I AS = 17A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 62A, di/dt 0A/μs, V DD BV DSS, Starting T J = 25 C 4. Pulse Test: Pulse width 300μs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 www.fairchildsemi.com
Figure 1. On-Region Characteristics I D,Drain Current[A] 500 0 V GS Top : 15.0 V.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1. 250μs Pulse Test 2. T C = 25 o C 1 0.1 1 V DS,Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage RDS(ON) [Ω], Drain-Source On-Resistance 0.06 0.05 0.04 0.03 0.02 V GS = V * Note : T J = 25 o C V GS = 20V 0.015 0 50 0 150 200 I D, Drain Current [A] Figure 2. Transfer Characteristics I D,Drain Current[A] 00 0 1. V DS = V 2. 250μs Pulse Test 150 o C 25 o C -55 o C 1 2 4 6 8 V GS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature IDR, Reverse Drain Current [A] 00 0 1. V GS = 0V 2. I D = 250μA T A = 150 o C T A = 25 o C 1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Capacitances [pf] 9000 6000 3000 C iss C oss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd * Note: 1. V GS = 0V 2. f = 1MHz V GS, Gate-Source Voltage [V] 8 6 4 2 V DS = 40V V DS = 0V V DS = 160V 0 0.1 1 V DS, Drain-Source Voltage [V] * Note : I D = 62A 0 30 0 20 40 60 80 0 Q g, Total Gate Charge [nc] 3 www.fairchildsemi.com
Figure 7. Breakdown Voltage Variation vs. Temperature BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 1. V GS = 0V 2. I D = 250μA 0.8-0 -50 0 50 0 150 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 00 Figure 8. On-Resistance Variation vs. Temperature r DS(on), [Normalized] Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 0.5 1. V GS = V 2. I D = 31A 0.0-0 -50 0 50 0 150 200 T J, Junction Temperature [ o C] Figure. Maximum Drain Current vs. Case- Temperature 70 ID, Drain Current [A] 0 1 Operation in This Area is Limited by R DS(on) ms DC 0 μs 1ms 0.1 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse 0.01 1 0 V DS, Drain-Source Voltage [V] ID, Drain Current [A] 60 50 40 30 20 0 400 25 50 75 0 125 150 T C, Case Temperature [ o C] Figure 11. Transient Thermal Response Curve 0 Thermal Response [Z θjc ] -1-2 -3 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse 1. Z θjc (t) = 0.48 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θjc (t) -5-4 -3-2 -1 0 1 Rectangular Pulse Duration [sec] P DM t 1 t 2 4 www.fairchildsemi.com
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com
Mechanical Dimensions (1.70) 13.08 ±0.20 9.20 ±0.20 1.30 ±0. (1.46) (1.00) 1.27 ±0. 9.90 ±0.20 (8.70) ø3.60 ±0. (45 ) (3.00) (3.70) 1.52 ±0. TO-220 15.90 ±0.20 2.80 ±0..08 ±0.30 18.95MAX. 4.50 ±0.20 1.30 +0. 0.05 2.54TYP [2.54 ±0.20] 0.80 ±0. 2.54TYP [2.54 ±0.20] 0.50 +0. 0.05 2.40 ±0.20.00 ±0.20 7 www.fairchildsemi.com
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