FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TMP17N15A 15V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package Marking TMP17N15A TO-22 17N15A Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (V GS = V) V DSS 15 V Continuous Drain Current T C = 25ºC T C = 1ºC 12.7 I D 17 A Pulsed Drain Current (note1) I DM 68 A Gate-Source Voltage V GSS ±2 V Single Pulse Avalanche Energy (note2) E AS 1.3 mj Avalanche Current I As 8.3 A Power Dissipation (note3) T C = 25ºC P D 78.9 W T C = 1ºC 39.5 W Operating Junction and Storage Temperature Range T J, T stg -55~+175 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case R thjc 1.9 Thermal Resistance, Junction-to-Ambient R thja 6 ºC/W V1. 1
Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Value Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = 25µA 15 -- -- V Zero Gate Voltage Drain Current I DSS V DS = 15V, V GS = V, T J = 25ºC -- -- 1 V DS = 15V, V GS = V, T J = 1ºC -- -- 1 μa Gate-Source Leakage I GSS V GS = ±2V -- -- ±1 na Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25µA 3 4 5 V Drain-Source On-Resistance R DS(on) V GS = 1V, I D = 8.5A -- 7 85 mω Forward Transconductance g fs V DS = 5V, I D = 8.5A -- 16.3 -- S Dynamic Input Capacitance C iss -- 144 -- V GS = V, Output Capacitance C oss V DS = 75V, f = 1.MHz -- 67 -- Reverse Transfer Capacitance C rss -- 26 -- Total Gate Charge Q g -- 25 -- Gate-Source Charge Q gs V DD = 75V, I D = 17A, V GS = 1V -- 9 -- Gate-Drain Charge Q gd -- 7 -- pf nc Turn-on Delay Time t d(on) -- 7 -- Turn-on Rise Time t r V DD = 75V, I D = 17A, -- 13 -- Turn-off Delay Time t d(off) Vgs=1V,R G = 2.5Ω -- 12 -- ns Turn-off Fall Time t f -- 8 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current I S -- -- 17 T C = 25ºC Pulsed Diode Forward Current I SM -- -- 68 A Body Diode Voltage V SD T J = 25ºC, I SD = 8.5A, V GS = V -- -- 1.2 V Reverse Recovery Time t rr I F = 17A, -- 65 -- ns Reverse Recovery Charge Q rr di F /dt = 1A/μs -- 16 -- nc Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. VDD = 5V, RG = 25Ω, Starting TJ = 25 C,L=.3mH 3. The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance. V1. 2
Typical Characteristics T J = 25ºC, unless otherwise noted V GS, Gate-to-Source Voltage (V) R DS(on), On-Resistance (mω) I D, Drain Current (A) 3 25 2 15 1 13 12 11 1 9 8 7 6 5 4 12 1 8 6 4 2 5 Figure 1. Output Characteristics 1V 7V 6.5V 6V 5.5V 1 2 3 4 5 V DS, Drain-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current V GS = 1V T J = 25ºC 3 5 1 15 2 25 3 I D, Drain Current (A) Figure 5. Gate Charge V DD = 75V 5 1 15 2 25 3 Q g, Total Gate Charge (nc) I s, Source Current (A) Capacitance (pf) I D, Drain Current (A) 2 15 1 5 1 4 1 3 1 2 1 1 1 1 2 1 1 1 1-1 1-2 1-3 1-4 Figure 2. Transfer Characteristics V DS = 5V 2 3 4 5 6 7 8 V GS, Gate-to-Source Voltage (V) V GS = f = 1MHz T J = 125ºC Figure 4. Capacitance C iss C oss C rss 3 6 9 12 15 V DS, Drain-to-Source Voltage (V) Figure 6. Body Diode Forward Voltage T J = 125ºC T J = 25ºC T J = 25ºC.3.6.9 1.2 V SD, Source-to-Drain Voltage (V) V1. 3
Typical Characteristics T J = 25ºC, unless otherwise noted Figure 7. On-Resistance vs. Junction Temperature Figure 8. Threshold Voltage vs. Junction Temperature 3 2.5 V GS = 1V I D = 8.5A 1.5 I D = 25µA R DS(on), (Normalized) 2 1.5 1 V GS(th), (Variance) -.5-1.5-1.5-5 -25 25 5 75 1 125 15 T J, Junction Temperature (ºC) -2-5 -25 25 5 75 1 125 15 T J, Junction Temperature (ºC) Figure 9. Transient Thermal Impedance Figure 1. Safe operation area for 1 1 1 3 Z thjc, Thermal Impedance (Normalized) 1 1-1 1-2 D =.5 D =.2 D =.1 D =.5 D =.2 D =.1 Single Pulse 1-3 1-6 1-5 1-4 1-3 1-2 1-1 I D, Drain Current(A) 1 2 1 1 1 1-1 t p = 1us t p = 1us t p = 1ms t p = 1ms DC 1-1 1 1 1 1 2 1 3 T p, Pulse Width (s) V DS, Drain-Source Voltage(V) V1. 4
Figure A:Gate Charge Test Circuit and Waveform TMP17N15A Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform V1. 5
TO-22 V1. 6
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