FDMC83 Dual N-Channel Power Trench MOSFET V, A, mω Features Max r DS(on) = mω at V GS = V, I D = A Max r DS(on) = mω at V GS =. V, I D = A Max r DS(on) = 8 mω at V GS = 3. V, I D = A Termination is Lead-free and RoHS Compliant Pin G S S S D D General Description July 3 This device includes two V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance. Applications Battery Protection Load Switching Point of Load G 8 7 6 Bottom Drain Contact Q Q 3 G S S G Bottom Drain Contact S Power 33 MOSFET Maximum Ratings T A = C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage V V GS Gate to Source Voltage (Note ) ± V Drain Current -Continuous T A = C (Note a) I D -Pulsed A E AS Single Pulse Avalanche Energy (Note 3) mj Power Dissipation T A = C (Note a).9 P D Power Dissipation T A = C (Note b).8 W T J, T STG Operating and Storage Junction Temperature Range - to + C Thermal Characteristics R θja Thermal Resistance, Junction to Ambient (Note a) 6 R θja Thermal Resistance, Junction to Ambient (Note b) Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDMC83 FDMC83 Power 33 3 mm 3 units Fairchild Semiconductor Corporation FDMC83 Rev.C
Electrical Characteristics T J = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = μa, V GS = V V ΔBV DSS Breakdown Voltage Temperature ΔT J Coefficient I D = μa, referenced to C 9 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 3 V, V GS = V μa I GSS Gate to Source Leakage Current, Forward V GS = V, V DS = V na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = μa...8 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient Dynamic Characteristics I D = μa, referenced to C - mv/ C V GS = V, I D = A 8 V GS =. V, I D = A r DS(on) Static Drain to Source On Resistance V GS = 3. V, I D = A 9 8 mω V GS = V, I D = A T J = C 3 6 g FS Forward Transconductance V DD = V, I D = A 7 S C iss Input Capacitance 6 97 pf V DS = V, V GS = V C oss Output Capacitance 3 3 pf f = MHz C rss Reverse Transfer Capacitance 3 pf R g Gate Resistance.9. Ω Switching Characteristics t d(on) Turn-On Delay Time 7 3 ns t r Rise Time V DD = V, I D = A 3 ns t d(off) Turn-Off Delay Time V GS = V, R GEN = 6 Ω 9 33 ns t f Fall Time 3 ns Total Gate Charge V Q GS = V to V 3 nc g(tot) Total Gate Charge V GS = V to V V DD = V 7 nc Q gs Gate to Source Charge I D = A.8 nc Q gd Gate to Drain Miller Charge. nc Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = V, I S = A (Note ).83. V t rr Reverse Recovery Time ns I F = A, di/dt = A/μs Q rr Reverse Recovery Charge 9 8 nc NOTES:. R θja is determined with the device mounted on a in pad oz copper pad on a. x. in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 6 C/W when mounted on a in pad of oz copper b. C/W when mounted on a minimum pad of oz copper. Pulse Test: Pulse Width < 3 μs, Duty cycle <. %. 3. E AS of mj is based on starting T J = o C, L =.3 mh, I AS = A, V DD = 36 V, V GS = V. % tested at L = 3 mh, I AS = A.. As an N-ch device, the negative V gs rating is for low duty cycle pulse occurence only. No continuous rating is implied. Fairchild Semiconductor Corporation FDMC83 Rev.C
Typical Characteristics T J = C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3 PULSE DURATION = 8μs DUTY CYCLE =.%MAX 3 V DS, DRAIN TO SOURCE VOLTAGE (V).6....8 Figure. I D = A V GS = V V GS = V V GS =. V V GS = 3. V V GS = 3. V V GS = 3 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 8μs V GS =. V V GS = V DUTY CYCLE =.%MAX 3 I D, DRAIN CURRENT(A) On-Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage.6-7 - - 7 T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) 3 3 V GS = 3 V T J = o C V GS =3. V I D = A V GS = 3. V PULSE DURATION = 8μs DUTY CYCLE =.%MAX T J = o C 6 8 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) 3 PULSE DURATION = 8μs DUTY CYCLE =.%MAX V DS = V T J = o C T J = o C T J = - o C 3 V GS, GATE TO SOURCE VOLTAGE (V) Figure. Transfer Characteristics IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = o C T J = o C T J = - o C.....6.8.. V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current Fairchild Semiconductor Corporation FDMC83 Rev.C 3
Typical Characteristics T J = C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) 8 6 I D = A Q g, GATE CHARGE(nC) Figure 7. 3 V DD = V V DD = V V DD = V f = MHz V GS = V. V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage T J = o C T J = o C... t AV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability T J = o C CAPACITANCE (pf) ID, DRAIN CURRENT (A) 6 C iss C oss C rss μs ms THIS AREA IS ms LIMITED BY r DS(on). SINGLE PULSE ms T J = MAX RATED s R θja = o C/W s T A = o C DC... V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area P (PK), PEAK TRANSIENT POWER (W). - -3 - - t, PULSE WIDTH (sec) Figure. Single Pulse Maximum Power Dissipation SINGLE PULSE R θja = o C/W T A = o C Fairchild Semiconductor Corporation FDMC83 Rev.C
Typical Characteristics T J = C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θja.. DUTY CYCLE-DESCENDING ORDER D =...... SINGLE PULSE R θja = o C/W. - -3 - - t, RECTANGULAR PULSE DURATION (sec) Figure. Junction-to-Ambient Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A Fairchild Semiconductor Corporation FDMC83 Rev.C
Dimensional Outline and Pad Layout Fairchild Semiconductor Corporation FDMC83 Rev.C 6
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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I6 Fairchild Semiconductor Corporation FDMC83 Rev.C 7