600W halfbridge LLC evaluation board. Di Domenico Francesco (IFAT PMM ACDC AE) Zechner Florian (IFAT PMM ACDC AE)

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600W halfbridge LLC evaluation board EVAL-600W-1V-LLC-A EVAL-600W-1V-LLC-D Analog Digital Di Domenico Francesco (IFAT PMM ACDC AE) Zechner Florian (IFAT PMM ACDC AE)

Table of contents 1 General description Efficiency results 3 Design concept

Table of contents 1 General description Efficiency results 3 Design concept 3

General Description: The EVAL-600W-1V-LLC-x - Evaluation board in the Analog version -A or digital controlled -D shows how to design a Half-Bridge LLC stage of a server SMPS with the target to meet 80+ Titanium standard efficiency requirements. On this purpose there has been applied CoolMOS P6 technology IPP60R190P6 600V Power MOSFET on the primary side and OptiMOS low voltage Power MOSFET in SuperSO8 BSC010N04LS in the synchronous rectification secondary stage, in combination with QR CoolSET ICEQR80Z, Hi-Low Side Driver EDL05N06PF, in the newest version a Low Side Gate Driver EDN754F. The system is controlled by a LLC Controller ICEHS01G for the analog or XMC400 in the digital version. Summary of features: Output voltage: 1 V Output current: 50 A Peak efficiency @ 50% load > 97,8% Efficiency @ 10% load > 95% The following variants are available: 600W 1 V LLC analog version with CoolMOS P6, IPP60R190P6, EVAL-600W-1V-LLC-A 600W 1 V LLC digital version with CoolMOS P6, IPP60R190P6, EVAL-600W-1V-LLC-D 4

Example of system understanding: Infineon demo solution for Titanium HV DC/DC stage Half Bridge LLC with synchronous rectification in center tap configuration V in 350-410 V DC Primary HV MOSFETs CoolMOS TM IPP60R190P6 Reduced gate charge (Q g ) SR MOSFETs OptiMOS TM BSC010N04LS New generation Reduced E off Best FOM R DS(on) x Q g High body diode ruggedness Best FOM R DS(on) x Q oss V in_nom V out_nom I out P o 380 V DC 1 V DC 50 A 600 W HB Gate Drive IC Bias QR Flyback EDL05N06PF controller Non isolated LS Gate Drive ICEQR80Z EDN754F LLC controller Digital XMC400 / Analog ICEHS01G SR MOSFETs BSC010N04LS f res =f 0 157 khz f min 90 khz f max 10 khz Transformer turns ratio 16:1 C r 66 nf L r 15.5 uh L m 195 uh Resonant inductor RM1 core Transformer PQ35/35 core 5

Control board analog & digital Two possible solution to control Infineon`s 600 W LLC evaluation board Analog - ICEHS01G Resonant mode controller for Half-Bridge LLC resonant converter with synchronous rectification drives Driving signal for synchronous rectification which support full operation of Half-Bridge LLC resonant converter 0-pin DSO package 30 khz to 1MHz switching frequency 50% duty cycle for both primary and secondary gate drives Adjustable dead time with high accuracy Digital - XMC400-Q48K56 AB ARM Cortex -M4, 80 MHz, incl. single cycle DSP MAC and floating point unit (FPU) 8-channel DMA + dedicated DMA for USB USB.0 full-speed device CPU Frequency: 80 MHz eflash: 56 kb including hardware ECC 40 kb SRAM Package: PG-LQFP-48 07.10.015 Copyright Infineon Technologies AG 015. All rights reserved. 6

PCB boards layout: main power board and control and bias daughter boards Power Density>0W/inch 3 Controller Board Bias Board 7

Main power board schematic 8

Bias board schematic 9

Analog control board schematic 10

Digital Controller XMC400-Q48K56 AB Digital control board schematic 11

BOM (rework from analog to digital) Part Value Pcs Tolerance Device Package Description Assembling info Supplier C3 10 n/50 V 1 C-EU_C0805 C0805 CAPACITOR, Replace 470 n/50 V with 10 n/50 V R19 330R 1 ±1% R-EU_R0805 R0805 RESISTOR Replace 4K3 with 330R R0 330R 1 ±1% R-EU_R0805 R0805 RESISTOR Replace 4K3 with 330R n.a. n.a. 1 ±1% R-EU_R0805 R0805 RESISTOR Assemble 56R with n.a. IC1 Board 1 Board PCB Digital_ Controlcard IFX 1

PCB structure 13

Table of contents 1 General description Efficiency results 3 Design concept 14

Efficiency Automated efficiency measurement Combination of converter design (resonant tank, transformer) and proper HV device election Proper selection of SR LV device and secondary side 0,99 0,985 0,98 0,975 0,97 0,965 0,96 0,955 0,95 0,945 0,94 0,935 0,93 0,95 0,9 0,915 0,91 0,905 0,9 97.8% peak efficiency! Highest Efficiency standard in Computing applications (HV DC/DC stage) 5 7 9 11 13 15 17 19 1 3 5 7 9 31 33 35 37 39 41 43 45 47 49 I OUT [A] Output voltage: 1 V DC Output current: 50 A Efficiency: > 95% @ 10% load, V in = 380 V DC Efficiency max: 97.8%, V in = 380 V DC C7 180mOhm 0.1% Total accuracy 07.10.015 Copyright Infineon Technologies AG 015. All rights reserved. 15

10% P max V in =380 V dc 16

50% P max V in =380 V dc 1, 1 0,8 0,6 0,4 0, Turn-off losses Body diode losses Driving losses Conduction Losses 0 Losses spread on each device at 50%Pmax [W] 014-11-04 Copyright Infineon Technologies AG 014. All rights reserved. 17

100% P max V in =380 V dc 18

Table of contents 1 General description Efficiency results 3 Design concept 19

Design procedure: input data n V in V _ nom out_ nom M M min max K K min max ( Q, m, F x ) ( Q, m, F x ) n V V o _ min in _ max n V V o _ max in _ min 0

Resonant tank components and related resonant frequencies n=v in_nom /(xv o )=380/(*1) 16 L m =195 µh L r =15.5 µh L n =L m /L r =1.5 C r =66 nf 1 fo 157kHz LrCr 1 fp 4. 7kHz ( Lr Lm) Cr 1

gain Gain curves DC - gain curve (600 W LLC hardware revision P6) 1, 1,1 M max n V V o _ max in _ min 1 5 A 15 A 0,9 0,8 M min n V V o _ min in _ max 5 A 35 A 50 A 0,7 0,6 frequency [Hz]

Energy related calculations (Ref. IPP60R190P6 device parameters) I m ag _ min n V fsw _ o max L m 0.67 A En En res _ min cap _ max 1 1 ( L m Lr) I² (Co( er)) V ² mag _ min DS _ max 95.1 J 9 J En res _ min En cap _ max 3

Q oss, I mag, p k, t dead,min, t ecs relationship I m,pk I Q I Q IQ ( t) Im, ( t) 0 pk (1 t t ecs ) t tecs t tecs t ecs f ( Rg, tot, Vgs, th C, C ds gd ) I m,pk I CHB t dead,min 0 I C HB 1 ( t) dt Im, pk tecs Im, pk ( tdead, min tecs) Qoss, @ 400 V V BULK V HB 1 t dead, min t m, pk t ecs t dead,min ecs Q I oss, @ 400 V 4

Time related calculations (Ref. IPP60R190P6 device parameters) I I t t m ag _ min m ag _ max dead dead n V fsw _ n V fsw _ o min L m 1.66 tecs Qoss, @ 400V, min 130 nsec Im ag, max tecs Qoss, @ 400V, max 311nsec Im ag, min o max L m 0.67 A A 5

Main transformer structure: PQ35/35 core with TDK PC95 ferrite material 6

Resonant choke: RM1 core, material N87 7

Support slides 600 W LLC evaluation board Evaluation board page Technical description Datasheets Parameters Related material Videos www.infineon.com/600w-llc-evaluationboard-a www.infineon.com/600w-llc-evaluationboard-d Product family pages Product brief Application notes Selection guides Datasheets and portfolio Videos Simulation models www.infineon.com/p6 www.infineon.com/xmc Resonant Mode Controller www.infineon.com/optimos5-40v60v 8