PNP -50mA 20V High-Voltag Amplifir Transistors Datasht Paramtr Valu V CEO 20V -50mA I C Outlin UMT3 SMT3 Collctor Bas Bas Emittr Emittr Collctor Faturs 1) High Brakdown Voltag (BV CEO = 20V) 2) Complmntary NPN Typs : 2SC4102 (UMT3) / 2SC3906K (SMT3) 3) Complx transistors : IMT4 (SMT6) 4) Lad Fr/RoHS Compliant. 2SA1579 SOT-323 (SC-70) 2SA1514AK SOT-346 (SC-59) Innr circuit Collctor Bas Applications High Voltag Amplifir Emittr Packaging spcifications Part No. *1 x : h FE rank Packag Packag siz (mm) Taping cod 2SA1579 UMT3 2021 T106 Rl siz (mm) 180 Tap width (mm) 2SA1514K SMT3 2928 T146 180 8 Basic ordring unit (pcs) Marking 8 3,000 Rx *1 3,000 Rx *1 1/7 2013.05 - Rv.B
Data Sht Absolut maximum ratings (Ta = 25 C) Paramtr Symbol Valus Unit Collctor-bas voltag Collctor-mittr voltag Emittr-bas voltag Collctor currnt V CBO 20 V V CEO 20 V V EBO -5 V I C -50 ma I CP *1 0 ma 2SA1579 *2 Powr dissipation P 2SA1514K D 200 mw Junction tmpratur Rang of storag tmpratur T j 150 C T stg -55 to +150 C Elctrical charactristics(ta = 25 C) Paramtr Collctor-mittr brakdown voltag Collctor-bas brakdown voltag Emittr-bas brakdown voltag Symbol Conditions Min. Typ. Max. BV CEO I C = ma 20 - - V BV CBO I C = -50mA 20 - - V BV EBO I E = -50mA -5 - - V Unit Collctor cut-off currnt I CBO V CB = 0V - - -0.5 ma Emittr cut-off currnt I EBO V EB = -4V - - -0.5 ma Collctor-mittr saturation voltag V CE(sat) I C = ma, I B = ma - - -0.5 V DC currnt gain h FE V CE = -6V, I C = -2mA 180-560 - Transition frquncy f T V CE = 2V, I E = 2mA f=100mh Z - 140 Output capacitanc *1 P W =100ms Singl Puls Cob *2 Each trminal mountd on a rfrnc footprint V CB = 2V, I E = 0mA, f = 1MHz - MHz - 3.2 - pf h FE rank catgoris Rank R S h FE 180 to 390 270 to 560 2/7 2013.05 - Rv.B
Data Sht Elctrical charactristic curvs(ta = 25 C) Fig.1 Ground Emittr Propagation Charactristics Fig.2 Typical Output Charactristics V CE = -6V Ta=-40ºC 25ºC 100ºC 0-0.5.5-2 BASE TO EMITTER VOLTAGE : V BE [V] COLECTOR TO EMITTE VOLTAGE : V CE [V] Fig.3 DC Currnt Gain vs. Collctor Currnt(I) Fig.4 DC Currnt Gain vs. Collctor Currnt(II) 10000 V CE = -6V 10000 DC CURRENT GAIN : h FE 1000 100 Ta=100ºC 25ºC -40ºC DC CURRENT GAIN : h FE 1000 100 V CE = -5V -3V V 10 10 3/7 2013.05 - Rv.B
Data Sht Elctrical charactristic curvs(ta = 25 C) Fig.5 Collctor-Emittr Saturation Voltag vs. Collctor Currnt (I) I C / I B = 10/1 Fig.6 Collctor-Emittr Saturation Voltag vs. Collctor Currnt (II) COLLECTOR-EMITTER SATURATION VOLTAGE : V CE(sat) [V] Ta=100ºC 25ºC -40ºC -0.01 COLLECTOR-EMITTER SATURATION VOLTAGE : V CE(sat) [V] I C / I B =50/1 20/1 10/1-0.01 BASE-EMITTER SATURATION VOLTAGE : V BE(sat) [V] Fig.7 Bas-Emittr Saturation Voltag vs. Collctor Currnt I C / I B = 10/1 Ta= -40ºC 25ºC 100ºC TRANSITION FREQUENCY : f T [MHz] Fig.8 Gain Bandwidth Product vs. Emittr Currnt EMITTER CURRENT :I E [ma] 4/7 2013.05 - Rv.B
Data Sht Elctrical charactristic curvs(ta = 25 C) COLLECTOR OUTPUT CAPACITANCE : Cob [pf] EMITTER INPUT CAPACITANCE : Cib [pf] Fig.9 Emittr input capacitanc vs. Emittr-Bas Voltag Collctor output capacitanc vs. Collctor-Bas Voltag 100 10 C ib C ob f=1mhz I E =0A 1 COLLECTOR - BASE VOLTAGE : V CB [V] EMITTER - BASE VOLTAGE : V EB [V] Fig.10 Saf Oprating Ara 00 0 2SA1579 DC (Mountd on a rfrnc land) 1ms 10ms 100ms Singl non rptitiv puls 00 COLLECTOR TO EMITTER VOLTAGE : V CE [V] Fig.11 Saf Oprating Ara 00 2SA1514K 0 DC (Mountd on a rfrnc land) 1ms 10ms 100ms Singl non rptitiv puls 00 COLLECTOR TO EMITTER VOLTAGE : V CE [V] 5/7 2013.05 - Rv.B
Data Sht Dimnsions (Unit : mm) UMT3 D A Q c E L1 Lp E b x S A A3 A H A1 1 S l1 b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] DIM MILIMETERS INCHES MIN MAX MIN MAX A 0.80 1.00 0.031 0.039 A1 0.00 0.10 0.000 0.004 A3 0.25 0.010 b 0.15 0.30 0.006 0.012 c 0.10 0.20 0.004 0.008 D 1.90 2.10 0.075 0.083 E 1.15 1.35 0.045 0.053 0.65 0.026 HE 2.00 2.20 0.079 0.087 L1 0.20 0.50 0.008 0.020 Lp 0.25 0.55 0.010 0.022 Q 0.10 0.30 0.004 0.012 x - 0.10-0.004 MILIMETERS INCHES DIM MIN MAX MIN MAX b2-0.50-0.020 1 1.55 0.061 l1-0.65-0.026 Dimnsion in mm / inchs 6/7 2013.05 - Rv.B
Data Sht Dimnsions (Unit : mm) SMT3 D A c Q L1 Lp E E b x S A A3 l1 A H 1 A1 S b2 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] DIM MILIMETERS INCHES MIN MAX MIN MAX A 1.00 1.30 0.039 0.051 A1 0.00 0.10 0.000 0.004 A3 0.25 0.010 b 0.35 0.50 0.014 0.020 c 0.09 0.25 0.004 0.010 D 2.80 3.00 0.110 0.118 E 1.50 1.80 0.059 0.071 0.95 0.037 HE 2.60 3.00 0.102 0.118 L1 0.30 0.60 0.012 0.024 Lp 0.40 0.70 0.016 0.028 Q 0.20 0.30 0.008 0.012 x - 0.10-0.004 y - 0.10-0.004 MILIMETERS INCHES DIM MIN MAX MIN MAX b2-0.60-0.024 1 2.10 0.083 l1-0.90-0.035 Dimnsion in mm / inchs 7/7 2013.05 - Rv.B
Notic Nots 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) Th information containd hrin is subjct to chang without notic. Bfor you us our Products, plas contact our sals rprsntativ and vrify th latst spcifications : Although ROHM is continuously working to improv product rliability and quality, smiconductors can brak down and malfunction du to various factors. Thrfor, in ordr to prvnt prsonal injury or fir arising from failur, plas tak safty masurs such as complying with th drating charactristics, implmnting rdundant and fir prvntion dsigns, and utilizing backups and fail-saf procdurs. ROHM shall hav no rsponsibility for any damags arising out of th us of our Poducts byond th rating spcifid by ROHM. Exampls of application circuits, circuit constants and any othr information containd hrin ar providd only to illustrat th standard usag and oprations of th Products. Th priphral conditions must b takn into account whn dsigning circuits for mass production. Th tchnical information spcifid hrin is intndd only to show th typical functions of and xampls of application circuits for th Products. ROHM dos not grant you, xplicitly or implicitly, any licns to us or xrcis intllctual proprty or othr rights hld by ROHM or any othr partis. ROHM shall hav no rsponsibility whatsovr for any disput arising out of th us of such tchnical information. Th Products ar intndd for us in gnral lctronic quipmnt (i.. AV/OA dvics, communication, consumr systms, gaming/ntrtainmnt sts) as wll as th applications indicatd in this documnt. Th Products spcifid in this documnt ar not dsignd to b radiation tolrant. For us of our Products in applications rquiring a high dgr of rliability (as xmplifid blow), plas contact and consult with a ROHM rprsntativ : transportation quipmnt (i.. cars, ships, trains), primary communication quipmnt, traffic lights, fir/crim prvntion, safty quipmnt, mdical systms, srvrs, solar clls, and powr transmission systms. Do not us our Products in applications rquiring xtrmly high rliability, such as arospac quipmnt, nuclar powr control systms, and submarin rpatrs. ROHM shall hav no rsponsibility for any damags or injury arising from non-complianc with th rcommndd usag conditions and spcifications containd hrin. ROHM has usd rasonabl car to nsur th accuracy of th information containd in this documnt. Howvr, ROHM dos not warrants that such information is rror-fr, and ROHM shall hav no rsponsibility for any damags arising from any inaccuracy or misprint of such information. Plas us th Products in accordanc with any applicabl nvironmntal laws and rgulations, such as th RoHS Dirctiv. For mor dtails, including RoHS compatibility, plas contact a ROHM sals offic. ROHM shall hav no rsponsibility for any damags or losss rsulting non-complianc with any applicabl laws or rgulations. Whn providing our Products and tchnologis containd in this documnt to othr countris, you must abid by th procdurs and provisions stipulatd in all applicabl xport laws and rgulations, including without limitation th US Export Administration Rgulations and th Forign Exchang and Forign Trad Act. 14) This documnt, in part or in whol, may not b rprintd or rproducd without prior consnt of ROHM. Thank you for your accssing to ROHM product informations. Mor dtail product informations and catalogs ar availabl, plas contact us. ROHM Customr Support Systm http:///contact/ R1102A
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