Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 2V/5A, R DS(ON) =38mW(max.) @ =4.5V R DS(ON) =54mW(max.) @ =2.5V R DS(ON) =85mW(max.) @ =.8V P-Channel -2V/-3.3A, R DS(ON) =85mW(max.) @ =-4.5V R DS(ON) =2mW(max.) @ =-2.5V R DS(ON) =2mW(max.) @ =-.8V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Applications () G D2 S D Top View of SOT-23-6 (6)D (3) G2 G2 S2 G (4)D2 Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Load Switch (5)S N-Channel (2)S2 P-Channel Ordering and Marking Information SM267CS Assembly Material Handling Code Temperature Range Package Code Package Code C : SOT-23-6 Operating Junction Temperature Range C : -55 to 5 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM267CS C : K7XX XX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Absolute Maximum Ratings (T A = 25 C unless otherwise noted) Symbol Parameter N Channel P Channel Unit Common Ratings V DSS Drain-Source Voltage 2-2 V S Gate-Source Voltage ±2 ±2 V I D T A =25 C 5-3.3 Continuous Drain Current T A =7 C 4-2.6 I DM Pulsed Drain Current =V 2-3 I S Diode Continuous Forward Current T J Maximum Junction Temperature 5 T STG Storage Temperature Range -55 to 5 P D R qja * Maximum Power Dissipation T A =25 C.4 T A =7 C.9 Thermal Resistance-Junction to Ambient t s 9 Steady State 25 Note: * Surface Mounted on in 2 pad area. A C W C/W 2
N Channel Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics N Channel Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage =V, =25mA 2 - - V S Zero Gate Voltage Drain Current V DS =6V, =V - - T J =85 C - - 3 (th) Gate Threshold Voltage V DS =, =25mA.5.7 V I GSS Gate Leakage Current =±2V, V DS =V - - ± ma R DS(ON) a Drain-Source On-State Resistance Diode Characteristics V SD a =4.5V, =5A - 3 38 =2.5V, =4A - 4 54 =.8V, =A - 6 85 Diode Forward Voltage I SD =A, =V -.75. V t rr Reverse Recovery Time -.5 - ns I SD =5A, dl SD /dt=a/ms Q rr Reverse Recovery Charge - 3.2 - nc Dynamic Characteristics b R g Gate Resistance =V,V DS =V,F=MHz - 2.2 - W C iss Input Capacitance =V, - 275 - C oss Output Capacitance V DS =V, - 7 - C rss Reverse Transfer Capacitance Frequency=.MHz - 6 - t d(on) Turn-on Delay Time - 2.4 - T r Turn-on Rise Time V DD =V, R L =W, - 3 - =A, V GEN =V, t d(off) Turn-off Delay Time R G =6W - 5.5 - T f Turn-off Fall Time - 3 - Gate Charge Characteristics b Q g Total Gate Charge V DS =V, =5A =4.5V, - 4.5 - =V - 9 - Q gs Gate-Source Charge -.3 - Q gd Gate-Drain Charge V DS =V, =V, =5A - 2 - Q gth Threshold Gate Charge -. - Note a:pulse test; pulse width 3ms, duty cycle 2%. Note b:guaranteed by design, not subject to production testing. Unit ma mw pf ns nc 3
P Channel Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics P Channel Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage =V, =-25mA -2 - - V S Zero Gate Voltage Drain Current V DS =-6V, =V - - - T J =85 C - - -3 (th) Gate Threshold Voltage V DS =, =-25mA -.5 -.7 - V I GSS Gate Leakage Current =±V, V DS =V - - ± ma R DS(ON) a Drain-Source On-State Resistance Diode Characteristics V SD a =-4.5V, =-3.3A - 65 85 =-2.5V, =-2.A - 9 2 =-.8V, =-A - 3 2 Diode Forward Voltage I SD =-A, =V - -.75 -. V t rr Reverse Recovery Time - 6 - ns I SD =-3.3A, dl SD /dt=a/ms Q rr Reverse Recovery Charge - 6 - nc Dynamic Characteristics b R g Gate Resistance =V,V DS =V,F=MHz - - W C iss Input Capacitance =V, - 365 - C oss Output Capacitance V DS =-V, - 75 - C rss Reverse Transfer Capacitance Frequency=.MHz - 6 - t d(on) Turn-on Delay Time - 5.3 - T r Turn-on Rise Time V DD =-V, R L =W, - 4.2 - =-A, V GEN =-V, t d(off) Turn-off Delay Time R G =6W - 3 - T f Turn-off Fall Time - 23 - Gate Charge Characteristics b Q g Total Gate Charge V DS =-V, =-3.3A =-4.5V, - 4.5 - =-V - 9.2 - Q gs Gate-Source Charge -.7 - Q gd Gate-Drain Charge V DS =-V, =-V, =-3.3A -.8 - Q gth Threshold Gate Charge -.3 - Note a:pulse test; pulse width 3ms, duty cycle 2%. Note b:guaranteed by design, not subject to production testing. Unit ma mw pf ns nc 4
N Channel Typical Operating Characteristics Power Dissipation Drain Current.6 6.4 5.2 Ptot - Power (W)..8.6.4 ID - Drain Current (A) 4 3 2.2 T A =25 o C. 2 4 6 8 2 4 6 T A =25 o C,V G =4.5V 2 4 6 8 2 4 6 Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) 5. Rds(on) Limit 3ms ms ms ms DC T A =25 o C... - Drain - Source Voltage (V) Normalized Transient Thermal Resistance 2...2.5..2 Duty =.5 Single Pulse Mounted on in 2 pad R qja : 9 o C/W. E-4 E-3.. Square Wave Pulse Duration (sec) 5
N Channel Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 2 =3,4,5,6,7,8,9,V 2 ID - Drain Current (A) 6 2 8 4 2.5V 2V.5V RDS(ON) - On - Resistance (mw) 8 6 4 2 =.8V =2.5V =4.5V..5..5 2. 2.5 3. - Drain-Source Voltage (V) 4 8 2 6 2 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 2 =5A.6 =25mA RDS(ON) - On - Resistance (mw) 8 6 4 2 Normalized Threshold Voltage.4.2..8.6.4 2 3 4 5 6 7 8 9 VGS - Gate - Source Voltage (V).2-5 -25 25 5 75 25 5 6
N Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward.8.6 = 4.5V = 5A 2 Normalized On Resistance.4.2..8 IS - Source Current (A) T j =5 o C T j =25 o C.6 R ON @T j =25 o C: 3mW.4-5 -25 25 5 75 25 5...3.6.9.2.5 VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 56 48 4 32 24 6 8 Crss Coss Frequency=MHz Ciss VGS - Gate - source Voltage (V) 9 8 7 6 5 4 3 2 V DS =V =5A 4 8 2 6 2 - Drain - Source Voltage (V) 2 4 6 8 QG - Gate Charge (nc) 7
P Channel Typical Operating Characteristics Power Dissipation Drain Current.6 3.5.4 3. Ptot - Power (W).2..8.6.4 -ID - Drain Current (A) 2.5 2..5..2.5 T A =25 o C. 2 4 6 8 2 4 6 T A =25 o C,V G =-4.5V. 2 4 6 8 2 4 6 Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A) 5 Rds(on) Limit 3ms ms ms ms. DC T A =25 o C... - - Drain - Source Voltage (V) Normalized Transient Thermal Resistance 2...2.5..2 Duty =.5 Single Pulse Mounted on in 2 pad R qja : 9 o C/W. E-4 E-3.. Square Wave Pulse Duration (sec) 8
P Channel Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) 4 2 8 6 4 2 =-3,-4,-5,-6,-7,-8,-9,-V -2.5V -2V -.5V RDS(ON) - On - Resistance (mw) 24 2 8 5 2 9 6 3 =-.8V =-2.5V =-4.5V 2 3 4 5 - - Drain - Source Voltage (V) 2 4 6 8 2 -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 3 =-3.3A.6 =-25mA RDS(ON) - On - Resistance (mw) 25 2 5 5 Normalized Threshold Vlotage.4.2..8.6.4 2 3 4 5 6 7 8 9.2-5 -25 25 5 75 25 5 -VGS - Gate - Source Voltage (V) 9
P Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward.8.6 = -4.5V = -3.3A Normalized On Resistance.4.2..8 -IS - Source Current (A) T j =5 o C T j =25 o C.6 R ON @T j =25 o C: 65mW.4-5 -25 25 5 75 25 5...2.4.6.8..2.4.6 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 63 56 Frequency=MHz 9 V DS =-V =-3.3A C - Capacitance (pf) 49 42 35 28 2 4 7 Crss Coss Ciss -VGS - Gate-source Voltage (V) 8 7 6 5 4 3 2 4 8 2 6 2 - - Drain - Source Voltage (V) 2 4 6 8 QG - Gate Charge (nc)
Avalanche Test Circuit and Waveforms N Channel DUT L tp X(SUS) RG VDD IAS tp IL.W VDD EAS tav P Channel L tav DUT EAS RG VDD VDD tp IAS IL.W tp X(SUS) Switching Time Test Circuit and Waveforms N Channel DUT RD 9% RG VGS VDD tp % VGS td(on) tr td(off) tf P Channel RG VGS DUT RD VDD VGS % td(on) tr td(off) tf tp 9%
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Classification Profile 3
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) C 5 C 6-2 seconds 5 C 2 C 6-2 seconds Average ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) 83 C 6-5 seconds 27 C 6-5 seconds See Classification Temp in table See Classification Temp in table 2 2** seconds 3** seconds Average ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness Volume mm 3 <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <.6 mm 26 C 26 C 26 C.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, A8 Hrs, 8% of max @ Tjmax HTGB JESD-22, A8 Hrs, % of VGS max @ Tjmax PCT JESD-22, A2 68 Hrs, %RH, 2atm, 2 C TCT JESD-22, A4 5 Cycles, -65 C~5 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: 886-3-563588 Fax: 886-3-56358 4