TLMO / S / Y1000. Low Current 0603 LED. Vishay Semiconductors

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Transcription:

Low Current 63 LED Description The new 63 LED series have been designed in the smallest SMD package. This innovative 63 LED technology opens the way to smaller products of higher performance more design in flexibility enhanced applications The 63 LED is an obvious solution for small-scale, high power products that are expected to work reliability in an arduous environment. 8562 Features Smallest SMD package 63 with exceptional brightness.6 mm x.8 mm x.6 mm (L x W x H) High reliability lead frame based Temperature range - 4 C to + C Footprint compatible to 63 chipled Wavelength 633 nm (red), 66 nm (orange), 587 nm (yellow) AllnGaP and InGaN technology Viewing angle: extremely wide 6 Grouping parameter: luminous intensity, wavelength Available in 8 mm tape Lead-(Pb)-free device e3 Applications Backlight keypads Navigation systems Cellular phone displays Displays for industrial control systems Automotive features Miniaturized color effects Traffic displays Parts Table Part TLMS-GS8 TLMO-GS8 TLMY-GS8 Color, Luminous Intensity Red, I V = 4 mcd (typ.) Soft Orange, I V = 8 mcd (typ.) Yellow, I V = 6.5 mcd (typ.) Absolute Maximum Ratings T amb = 25 C, unless otherwise specified TLMS, TLMO, TLMY Parameter Test condition Symbol Value Unit Reverse voltage *) V R 2 V DC Forward current T amb 95 C I F 5 ma Surge forward current t p µs I FSM. A Power dissipation T amb 95 C P V 4 mw Junction temperature T j 2 C Operating temperature range T amb - 4 to + C Storage temperature range T stg - 4 to + C Soldering temperature acc. Vishay spec T sd 26 C Thermal resistance junction/ mounted on PC board R thja 5 K/W ambient (pad size > 5 mm 2 ) *) Driving the LED in reverse direction is suitable for short term application

Optical and Electrical Characteristics T amb = 25 C, unless otherwise specified Red TLMS Parameter Test condition Symbol Min Typ. Max Unit Luminous intensity 2) I F = 2 ma I V.6 4 mcd Dominant wavelength I F = 2 ma λ d 624 628 636 nm Peak wavelength I F = 2 ma λ p 64 nm Angle of half intensity I F = 2 ma ϕ ± 8 deg Forward voltage I F = 2 ma V F.8 2.6 V Reverse voltage I R = µa V R 6 V Junction capacitance V R =, f = MHz C j 5 pf 2) in one Packing Unit I Vmax /I Vmin.6 Soft Orange TLMO Parameter Test condition Symbol Min Typ. Max Unit Luminous intensity 2) I F = 2 ma I V 3.2 7.5 mcd Dominant wavelength I F = 2 ma λ d 6 65 69 nm Peak wavelength I F = 2 ma λ p 6 nm Angle of half intensity I F = 2 ma ϕ ± 8 deg Forward voltage I F = 2 ma V F.8 2.6 V Reverse voltage I R = µa V R 6 V Junction capacitance V R =, f = MHz C j 5 pf 2) in one Packing Unit I Vmax /I Vmin.6 Yellow TLMY Parameter Test condition Symbol Min Typ. Max Unit Luminous intensity 2) I F = 2 ma I V 3.2 7.5 mcd Dominant wavelength I F = 2 ma λ d 58 588 595 nm Peak wavelength I F = 2 ma λ p 59 nm Angle of half intensity I F = 2 ma ϕ ± 8 deg Forward voltage I F = 2 ma V F.8 2.6 V Reverse voltage I R = µa V R 6 V Junction capacitance V R =, f = MHz C j 5 pf 2) in one Packing Unit I Vmax /I Vmin.6 2

Color Classification Group Dominant Wavelength (nm) Yellow Orange min max min max 2 58 583 6 63 3 583 586 62 65 4 586 589 64 67 5 589 592 66 69 6 592 595 Luminous Intensity Classification Group Luminous Intensity (mcd) min max Ma.6 2.5 Mb 2 3.2 Na 2.5 4 Nb 3.2 5 Pa 4 6.3 Pb 5 8 Qa 6.3 Qb 8 2.5 Ra 6 Rb 2.5 2 Sa 6 25 Sb 2 32 Group Name on Label Luminous Intensity Group Halfgroup Wavelength Forward Voltage Q b 4 One packing unit/tape contains only one classification group of luminous intensity, color and forward voltage. Only one single classification groups is not available. The given groups are not order codes, customer specific group combinations require marketing agreement. No color subgrouping for Super Red. 3

Typical Characteristics (Tamb = 25 C unless otherwise specified) P Power Dissipation (mw) V 947 25 2 5 5 2 4 6 8 2 T amb Ambient Temperature ( C) λ d - Dominant Wavelengt (nm) Orange.8.6.4.2 -.2 -.4 -.6 -.8 -. I 933 F - Forward Current (ma) Figure. Power Dissipation vs. Ambient Temperature Figure 4. Dominant Wavelength vs. Forward Current I Vrel - Relative Luminous Intensity. Orange.. 927 I F - Forward Current (ma) Change of Dom. Wavelength (nm) d 936 8 6 4 2 2 4 Orange 6 2 2 4 6 8 T amb Ambient Temperature ( C) Figure 2. Relative Luminous Intensity vs. Forward Current Figure 5. Change of Dominant Wavelength vs. Ambient Temperature I - Forward Current (ma) Orange..5 2 2.5 3 93 V F - Forward Voltage (V) Figure 3. Forward Current vs. Forward Voltage F I Vrel - Relative Luminous Intensity 939 2.4 2.2 Orange I F =2mA 2..8.6.4.2..8.6.4.2-2 2 4 6 8 T amb -Ambient Temperature ( C) Figure 6. Relative Luminous Intensity vs. Amb. Temperature 4

2.2 2.5 Orange I F =2mA 2. 2.5 2..95.9.85.8.75.7.65.6 2 2 4 6 8 943 T amb -Ambient Temperature ( C) V - Forward Voltage (V) F Figure 7. Forward Voltage vs. Ambient Temperature λ d - Dominant Wavelength (nm) Yellow.8.6.4.2 -.2 -.4 -.6 -.8 -. I F - Forward Current (ma) 934 Figure. Dominant Wavelength vs. Forward Current I Relative Luminous Intensity Vrel... Yellow.... 928 I F Forward Current (ma) Figure 8. Relative Luminous Intensity vs. Forward Current - Change of Dom. Wavelength (nm) λ d 937 8 6 4 2-2 -4-6 Yellow -2 2 4 6 8 T amb -Ambient Temperature ( C) Figure. Change of Dominant Wavelength vs. Ambient Temperature I - Forward Current (ma) Yellow..5 2 2.5 3 93 V F - Forward Voltage (V) Figure 9. Forward Current vs. Forward Voltage F I Vrel - Relative Luminous Intensity 94 2.4 2.2 Yellow I F =2mA 2..8.6.4.2..8.6.4.2-2 2 4 6 8 T amb -Ambient Temperature ( C) Figure 2. Relative Luminous Intensity vs. Amb. Temperature 5

V - Forward Voltage (V) F 944 2.2 2.5 Yellow I F =2mA 2. 2.5 2..95.9.85.8.75.7.65.6-2 2 4 6 8 T amb -Ambient Temperature ( C) Figure 3. Forward Voltage vs. Ambient Temperature - Dominant Wavelength (nm) λ d 935.8.6.4.2 -.2 -.4 -.6 -.8 Red -. I F - Forward Current (ma) Figure 6. Dominant Wavelength vs. Forward Current I - Relative Luminous Intensity Vrel. Red.. 929 I F - Forward Current (ma) Figure 4. Relative Luminous Intensity vs. Forward Current - Change of Dom. Wavelength (nm) λ d 938 6 4 2-2 -4 Red -2 2 4 6 8 T amb -Ambient Temperature ( C) Figure 7. Change of Dominant Wavelength vs. Ambient Temperature I - Forward Current (ma) Red..5 2 2.5 3 932 V F - Forward Voltage (V) Figure 5. Forward Current vs. Forward Voltage F I Vrel - Relative Luminous Intensity 942 2.4 2.2 Red I F =2mA 2..8.6.4.2..8.6.4.2-2 2 4 6 8 T amb -Ambient Temperature ( C) Figure 8. Relative Luminous Intensity vs. Amb. Temperature 6

2..95 Red I F =2mA V - Forward Voltage (V) F.9.85.8.75.7.65.6-2 2 4 6 8 945 T amb -Ambient Temperature ( C) Figure 9. Forward Voltage vs. Ambient Temperature 7

Reel Dimensions 943 8

Tape Dimensions 944 9

Package Dimensions in mm 9426

Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (99) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 99 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 9/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany

Notice Legal Disclaimer Notice Vishay Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 9 Revision: 8-Apr-5