BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current Gain h FE = 3 (Min) @ I C = 2. Adc Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 8 Vdc Collector Base Voltage V CBO 8 Vdc Emitter Base Voltage V EBO 5. Vdc Collector Current I C Adc Base Current I B 6. Adc Total Device Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 9.72 W W/ C T J, T stg 55 to +5 C Characteristics Symbol Max Unit Thermal Resistance, Junction to Case JC.39 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. AMPERE POWER TRANSISTORS 8 VOLTS 9 WATTS 2 3 TO 22AB CASE 22A 9 STYLE MARKING DIAGRAM BD8xxG AY WW BD8xx = Device Code x = 9 or A = Assembly Location Y = Year WW = Work Week G = Pb Free Package *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 22 October, 22 Rev. 6 Publication Order Number: BD89/D
BD89 (NPN), BD8 (PNP) ÎÎ ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit Collector Emitter Sustaining Voltage (Note ) BV CEO (I C =. Adc, I B = ) ÎÎÎ 8 ÎÎÎ Vdc Collector Cutoff Current I CBO madc (V CB = 8 Vdc, I E = ). Emitter Cutoff Current I (V BE = 5. Vdc, I C EBO Î 2. madc = ) DC Current Gain h FE (I C = 2. A, V CE = 2. V) ÎÎÎ 3 ÎÎÎ (I C = 4. A, V CE = 2. V) 5 ÎÎ Collector Emitter Saturation Voltage (Note ) V (I C = 3. Adc, I B =.3 Adc) CE(sat) Î. Vdc Base Emitter On Voltage (Note ) V BE(on) ÎÎÎ (I C = 4. Adc, V CE = 2. Vdc) Vdc Current Gain Bandwidth Product f T.5 ÎÎÎ MHz (I C =. Adc, V CE = Vdc, f =. MHz). Pulse Test: Pulse Width 3 s, Duty Cycle 2.%. 9 3.3 5 ms dc ms.5 ms ms P D, POWER DISSIPATION (WATTS) 8 7 6 5 4 3 2. 3 3 25 5 75 25 5 75 T C, CASE TEMPERATURE ( C) Figure. Active Region DC Safe Operating Area (see Note ) Figure 2. Power Temperature Derating Curve 2
BD89 (NPN), BD8 (PNP) NPN BD89 PNP BD8 5 5 T J = 5 C 2 25 C 2 T J = 5 C h FE, DC CURRENT GAIN 5 2-55 C V CE = 2. V h FE, DC CURRENT GAIN 5 2-55 C 25 C V CE = 2. V 5. 5..2.5. 2. 5. 2.2.5. 2. 5. 2 Figure 3. DC Current Gain 2..8.4. I C =. A.8 4. A 8. A.6.4.2 2..8.4. I C =. A 4. A 8. A.8.6.4.2 5. 2 5 2 5 2 5 5. 2 5 2 5 2 5 I B, BASE CURRENT (ma) I B, BASE CURRENT (ma) Figure 4. Collector Saturation Region 2.8 2.8 2.4 2.4 V, VOLTAGE (VOLTS) 2. V BE(sat) = I C /I B =.8 V BE @ V CE = 2. V.4 V CE(sat) @ I C /I B =.2.5. 2. 5. 2 V, VOLTAGE (VOLTS) 2. V BE(sat) @ I C /I B =.8 V BE @ V CE = 2. V.4 V CE(sat) @ I C /I B =.2.5. 2. 5. 2 Figure 5. On Voltages 3
BD89 (NPN), BD8 (PNP) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE..7.5.3.2..7.5.3.2 D =.5.2..5.2. SINGLE PULSE SINGLE JC (t) = r(t) PULSE JC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) - T C = P (pk) JC (t) P (pk) t t 2 DUTY CYCLE, D = t /t 2...2.3.5..2.3.5. 2. 3. 5. 2 3 5 2 3 5 t, PULSE WIDTH (ms) Figure 6. Thermal Response Note : There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on T J(pk) = 5 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) 5 C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. ORDERING INFORMATION BD89 BD89G BD8 BD8G Device Package Shipping TO 22 TO 22 (Pb Free) TO 22 TO 22 (Pb Free) 5 Units / Rail 5 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 4
BD89 (NPN), BD8 (PNP) PACKAGE DIMENSIONS TO 22 CASE 22A 9 ISSUE AG H Q Z L V G B 4 2 3 N D A K F T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.57.62 4.48 5.75 B.38.45 9.66 8 C.6.9 4.7 4.82 D.25.36.64.9 F.42.6 3.6 4.9 G.95.5 2.42 2.66 H..6 2.8 4. J.4.25.36.64 K.5.562 2.7 4.27 L.45.6.5.52 N.9.2 4.83 5.33 Q..2 2.54 3.4 R.8. 2.4 2.79 S.45.55.5.39 T.235.255 5.97 6.47 U..5. 7 V.45 ---.5 --- Z ---.8 --- 2.4 STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: 33 675 275 or 8 344 386 Toll Free USA/Canada Fax: 33 675 276 or 8 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 8 3 587 5 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BD89/D