D Series Power MOSFET IRFP6B, SiHG6B PRODUCT SUMMRY (V) at T J max. 55 R DS(on) max. at 25 C () V GS = V.25 Q g max. (nc) 7 Q gs (nc) Q gd (nc) 28 Configuration Single TO27C S G D ORDERING INFORMTION Package Lead (Pb)free Lead (Pb)free and Halogenfree G D S NChannel MOSFET FETURES Optimal Design Low rea Specific OnResistance Low Input Capacitance (C iss ) Reduced Capacitive Switching Losses High Body Diode Ruggedness valanche Energy Rated (UIS) Optimal Efficiency and Operation Low Cost Simple Gate Drive Circuitry Low FigureofMerit (FOM): R on x Q g Fast Switching Material categorization: For definitions of compliance please see www.vishay.com/doc?9992 Note * Lead (Pb)containing terminations are not RoHScompliant. Exemptions may apply. PPLICTIONS Consumer Electronics Displays (LCD or Plasma TV) Server and Telecom Power Supplies SMPS Industrial Welding Induction Heating Motor Drives Battery Chargers SMPS Power Factor Correction (PFC) TO27C IRFP6BPbF SiHG6BGE3 BSOLUTE MXIMUM RTINGS (T C = 25 C, unless otherwise noted) PRMETER SYMBOL LIMIT UNIT DrainSource Voltage 5 GateSource Voltage ± V V GS GateSource Voltage C (f > Hz) 3 Continuous Drain Current (T J = 5 C) V GS at V T C = 25 C I D T C = C 3 Pulsed Drain Current a I DM 62 Linear Derating Factor 2.2 W/ C Single Pulse valanche Energy b E S 28 mj Maximum Power Dissipation P D 278 W Operating Junction and Storage Temperature Range T J, T stg 55 to 5 C DrainSource Voltage Slope T J = 25 C 2 dv/dt Reverse Diode dv/dt d.36 V/ns Soldering Recommendations (Peak Temperature) for s 3 c C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. V DD = 5 V, starting T J = 25 C, L = mh, R g = 25, I S = 7.5. c..6 mm from case. d. I SD I D, starting T J = 25 C. S282Rev. B, 6pr2 Document Number: 952
IRFP6B, SiHG6B THERML RESISTNCE RTINGS PRMETER SYMBOL TYP. MX. UNIT Maximum Junctiontombient R thj C/W Maximum JunctiontoCase (Drain) R thjc.5 SPECIFICTIONS (T J = 25 C, unless otherwise noted) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNIT Static DrainSource Breakdown Voltage V GS = V, I D = 25 μ 5 V Temperature Coefficient /T J Reference to 25 C, I D = 25 μ.56 V/ C GateSource Threshold Voltage (N) V GS(th) = V GS, I D = 25 μ 2 V GateSource Leakage I GSS V GS = ± V ± n = 5 V, V GS = V Zero Gate Voltage Drain Current I DSS = V, V GS = V, T J = 25 C μ DrainSource OnState Resistance R DS(on) V GS = V I D =.2.25 Forward Transconductance g fs = 5 V, I D = 2 S Dynamic Input Capacitance C iss VGS = V, 39 Output Capacitance C oss = V, 52 Reverse Transfer Capacitance C rss f = MHz 3 Effective output capacitance, energy pf related a C o(er) 3 V GS = V, Effective output capacitance, time related b C o(tr) = V to V 89 Total Gate Charge Q g 85 7 GateSource Charge Q gs V GS = V I D =, = V nc GateDrain Charge Q gd 28 TurnOn Delay Time t d(on) 2 5 Rise Time t r V DD = V, I D =, 3 62 TurnOff Delay Time t d(off) V GS = V, R g = 9. 7 76 ns Fall Time t f 56 2 Gate Input Resistance R g f = MHz, open drain.8 DrainSource Body Diode Characteristics MOSFET symbol D Continuous SourceDrain Diode Current I S showing the integral reverse G Pulsed Diode Forward Current I SM p n junction diode 8 S Diode Forward Voltage V SD T J = 25 C, I S =, V GS = V.2 V Reverse Recovery Time t rr 37 ns Reverse Recovery Charge Q rr T J = 25 C, I F = I S =, di/dt = /μs, V R = V 5.9 μc Reverse Recovery Current I RRM 25 Notes a. C oss(er) is a fixed capacitance that gives the same energy as C oss while is rising from % to 8 %. b. C oss(tr) is a fixed capacitance that gives the same charging time as C oss while is rising from % to 8 %. S282Rev. B, 6pr2 2 Document Number: 952
IRFP6B, SiHG6B TYPICL CHRCTERISTICS (25 C, unless otherwise noted) I D, DraintoSource Current () 8 6 TOP 5 V V 3 V 2 V V V 9 V 8 V 7 V 6 V BOTTOM 5 V T J = 25 C R DS(on), DraintoSource On Resistance (Normalized) 3 2.5 2.5.5 I D = V GS = V 5 5 25 3, DraintoSource Voltage (V) 6 6 8 6 T J, Junction Temperature ( C) Fig. Typical Output Characteristics Fig. Normalized OnResistance vs. Temperature I D, DraintoSource Current () 3 TOP 5 V V 3 V 2 V V V 9 V 8 V 7 V 6 V BOTTOM 5 V T J = 5 C Capacitance (pf) C iss C rss C oss V GS = V, f = MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd 5 5 25 3, DraintoSource Voltage (V) 3 5, DraintoSource Voltage (V) Fig. 2 Typical Output Characteristics Fig. 5 Typical Capacitance vs. DraintoSource Voltage I D, DraintoSource Current () 8 6 T J = 25 C T J = 5 C V GS, GatetoSource Voltage (V) 2 6 2 8 = V = 25 V = V 5 5 25 V GS, GatetoSource Voltage (V) 3 6 9 5 8 Q g, Total Gate Charge (nc) Fig. 3 Typical Transfer Characteristics Fig. 6 Typical Gate Charge vs. GatetoSource Voltage S282Rev. B, 6pr2 3 Document Number: 952
IRFP6B, SiHG6B I SD, Reverse Drain Current () T J = 5 C T J = 25 C V GS = V..2..6.8..2..6 V SD, SourceDrain Voltage (V) I D, Drain Current () 6 2 8 25 5 75 25 5 T J, Case Temperature ( C) Fig. 7 Typical SourceDrain Diode Forward Voltage Fig. 9 Maximum Drain Current vs. Case Temperature I D, Drain Current (). Operation in this area limited by R DS(on) Limited by R DS(on) * T C = 25 C T J = 5 C Single Pulse BVDSS Limited μs ms ms, DraintoSource Voltage (V) * V GS > minimum V GS at which R DS(on) is specified, DraintoSource Brakdown Voltage (V) 625 6 575 55 525 5 75 6 6 8 6 T J, Junction Temperature ( C) Fig. 8 Maximum Safe Operating rea Fig. Temperature vs. DraintoSource Voltage Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..2.5 Single Pulse..... Pulse Time (s) Fig. Normalized Thermal Transient Impedance, JunctiontoCase S282Rev. B, 6pr2 Document Number: 952
IRFP6B, SiHG6B R D R G V GS D.U.T. V Q GS Q G Q GD V DD V Pulse width µs Duty factor. % Fig. 2 Switching Time Test Circuit V G Charge Fig. 6 Basic Gate Charge Waveform 9 % Current regulator Same type as D.U.T. 5 kω 2 V.2 µf.3 µf % V GS t d(on) t r t d(off) t f D.U.T. V DS V GS 3 m Vary t p to obtain required I S Fig. 3 Switching Time Waveforms L Fig. 7 Gate Charge Test Circuit I G I D Current sampling resistors R G I S D.U.T V DD V t p. Ω Fig. Unclamped Inductive Test Circuit t p V DD I S Fig. 5 Unclamped Inductive Waveforms S282Rev. B, 6pr2 5 Document Number: 952
IRFP6B, SiHG6B Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period V GS = V a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. V GS = 5 V for logic level devices Fig. 8 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?952. S282Rev. B, 6pr2 6 Document Number: 952
TO27C (High Voltage) Package Information 3 B R/2 Q E E/2 S 2 7 ØP (Datum B) Ø k M D B M ØP D2 2 x R (2) D D 2 3 D Thermal pad 5 L C 2 x b2 3 x b. M C M b Lead ssignments. Gate 2. Drain 3. Source. Drain 2 x e L See view B C DDE (b, b2, b) () Section C C, D D, E E MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MX. MIN. MX. DIM. MIN. MX. MIN. MX..58 5.3.8.9 D2.5.3..5 2.2 2.59.87.2 E 5.29 5.87.62.625 2.7 2.9.6.98 E 3.72.5 b.99..39.55 e 5.6 BSC.25 BSC b.99.35.39.53 Ø k.25. b2.53 2.39.6.9 L. 6.25.559.6 b3.65 2.37.65.93 L 3.7.29.6.69 b 2.2 3.3.95.35 N 7.62 BSC.3 BSC b5 2.59 3.38.2.33 Ø P 3.5 3.66.38. c.38.86.5.3 Ø P 7.39.29 c.38.76.5.3 Q 5.3 5.69.9.22 D 9.7.82.776.8 R.52 5.9.78.26 D 3.8.55 S 5.5 BSC.27 BSC ECN: X33Rev. D, Jul3 DWG: 597 Notes. Dimensioning and tolerancing per SME Y.5M99. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body.. Thermal pad contour optional with dimensions D and E. 5. Lead finish uncontrolled in L. 6. Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (.5"). 7. Outline conforms to JEDEC outline TO27 with exception of dimension c. 8. Xian and Mingxin actually photo. E View B C C Planting (c) E. M D B M View (b, b3, b5) Base metal c Revision: Jul3 Document Number: 936
Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHY INTERTECHNOLOGY, INC. LL RIGHTS RESERVED Revision: 8Feb7 Document Number: 9
Mouser Electronics uthorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: IRFP6BPBF SIHG6BGE3