Automotive P-Channel 4 V (D-S) 175 C MOSFET SQD5P4-9L PRODUCT SUMMARY V DS (V) - 4 R DS(on) ( ) at V GS = - 1 V.94 R DS(on) ( ) at V GS = - 4.5 V.19 I D (A) - 5 Configuration TO-252 Single S FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET Power MOSFET Package with Low Thermal Resistance % R g and UIS Tested Compliant to RoHS Directive 22/95/EC AEC-Q11 Qualified d G Drain Connected to Tab G D S Top View D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-252 SQD5P4-9L-GE3 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 4 Gate-Source Voltage V GS ± 2 V T Continuous Drain Current a C = 25 C - 5 I D T C = 125 C - 5 Continuous Source Current (Diode Conduction) a I S - 5 A Pulsed Drain Current b I DM - 2 Single Pulse Avalanche Current I AS - 5 L =.1 mh Single Pulse Avalanche Energy E AS 125 mj T Maximum Power Dissipation b C = 25 C 136 P D T C = 125 C 45 W Operating Junction and Storage Temperature Range T J, T stg - 55 to + 175 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c R thja 5 Junction-to-Case (Drain) R thjc 1.1 C/W Notes a. Package limited. b. Pulse test; pulse width 3 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S11-265-Rev. C, 24-Oct-11 1 Document Number: 6518 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQD5P4-9L SPECIFICATIONS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = V, I D = - 25 μa - 4 - - V Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = - 25 μa - 1.5 - - 2.5 Gate-Source Leakage I GSS V DS = V, V GS = ± 2 V - - ± na Zero Gate Voltage Drain Current I DSS V GS = V V DS = - 4 V, T J = 125 C - - - 5 μa V GS = V V DS = - 4 V - - - 1 V GS = V V DS = - 4 V, T J = 175 C - - - 15 On-State Drain Current a I D(on) V GS = - 1 V V DS - 5 V - 5 - - A Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = - 1 V I D = - 17 A -.76.94 Drain-Source On-State Resistance a R DS(on) V GS = - 1 V I D = - 5 A, T J = 125 C - -.14 V GS = - 1 V I D = - 5 A, T J = 175 C - -.17 V GS = - 4.5 V I D = - 14 A -.12.19 Forward Transconductance b g fs V DS = - 15 V, I D = - 17 A - 46 - S Dynamic b Input Capacitance C iss - 5339 6675 Output Capacitance C oss V GS = V V DS = - 2 V, f = 1 MHz - 852 165 pf Reverse Transfer Capacitance C rss - 681 855 Total Gate Charge c Q g - 13 155 Gate-Source Charge c Q gs V GS = - 1 V V DS = - 2 V, I D = - 5 A - 24 - nc Gate-Drain Charge c Q gd - 16 - Gate Resistance R g f = 1 MHz 1.4 2.8 4.2 Turn-On Delay Time c t d(on) - 13 2 Rise Time c t r V DD = - 2 V, R L =.4-15 23 Turn-Off Delay Time c t d(off) I D - 5 A, V GEN = - 1 V, R g = 1-61 92 ns Fall Time c t f - 19 29 Source-Drain Diode Ratings and Characteristics b Pulsed Current a I SM - - - 2 A Forward Voltage V SD I F = - 5 A, V GS = V - -.95-1.5 V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-265-Rev. C, 24-Oct-11 2 Document Number: 6518 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQD5P4-9L TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) V GS =1Vthru5V 8 8 6 4 V GS =4V 6 4 T C = 25 C 2 V GS =3V V GS =2V,1V 2 T C = 125 C 3 6 9 12 15 V DS - Drain-to-Source Voltage (V) Output Characteristics T C = - 55 C 1 2 3 4 5 V GS - Gate-to-Source Voltage (V) Transfer Characteristics.5 - Transconductance (S) g fs 8 6 4 2 T C = - 55 C T C = 125 C T C = 25 C R DS(on) - On-Resistance (Ω).4.3.2.1 V GS =4.5V V GS =1V 16 32 48 64 8 2 4 6 8 Transconductance On-Resistance vs. Drain Current 8 1 7 I D =5A C - Capacitance (pf) 6 5 4 3 2 C oss C rss C iss V GS - Gate-to-Source Voltage (V) 8 6 4 2 V DS =2V 5 1 15 2 25 3 35 4 2 4 6 8 12 V DS - Drain-to-Source Voltage (V) Capacitance Q g - Total Gate Charge (nc) Gate Charge S11-265-Rev. C, 24-Oct-11 3 Document Number: 6518 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQD5P4-9L TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 2.3 2. I D =24A 1 R DS(on) - On-Resistance (Normalized) 1.7 1.4 1.1 V GS =1V I S - Source Current (A) 1.1 T J = 15 C T J = 25 C.8.1.5-5 - 25 25 5 75 125 15 175 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.1.1.2.4.6.8 1. 1.2 V SD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage 1.1 R DS(on) - On-Resistance (Ω).8.6.4.2 T J = 15 C V GS(th) Variance (V).8.5.2 -.1 I D = 25 μa I D =5mA T J =25 C 2 4 6 8 1 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage -.4-5 - 25 25 5 75 125 15 175 T J - Temperature ( C) Threshold Voltage - 45 I D = 1 ma V DS - Drain-to-Source Voltage (V) - 47-49 - 51-53 - 55-5 - 25 25 5 75 125 15 175 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature S11-265-Rev. C, 24-Oct-11 4 Document Number: 6518 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQD5P4-9L THERMAL RATINGS (T A = 25 C, unless otherwise noted) I DM Limited 1 1 Limited by R DS(on)* I D Limited µs 1 ms 1 ms ms, 1 s, 1 s, DC.1 T C = 25 C Single Pulse BVDSS Limited.1.1.1 1 1 V DS - Drain-to-Source Voltage (V) * V GS minimum V GS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1.1 Duty Cycle =.5.2.1.5.2 Single Pulse.1 1-4 1-3 1-2 1-1 1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S11-265-Rev. C, 24-Oct-11 5 Document Number: 6518 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQD5P4-9L THERMAL RATINGS (T A = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1.1 Duty Cycle =.5.2.1.5.2 Single Pulse.1 1-4 1-3 1-2 1-1 1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x.62", double sided with 2 oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?6518. S11-265-Rev. C, 24-Oct-11 6 Document Number: 6518 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Package Information TO-252AA Case Outline E b3 A C2 MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. L3 A 2.18 2.38.86.94 A1 -.127 -.5 b.64.88.25.35 b2.76 1.14.3.45 D H b3 4.95 5.46.195.215 C.46.61.18.24 C2.46.89.18.35 b e1 e b2 L4 L5 gage plane height (.5 mm) C A1 L D 5.97 6.22.235.245 D1 4.1 -.161 - E 6.35 6.73.25.265 E1 4.32 -.17 - H 9.4 1.41.37.41 e 2.28 BSC.9 BSC e1 4.56 BSC.18 BSC L 1.4 1.78.55.7 L3.89 1.27.35.5 D1 L4-1.2 -.4 L5 1.1 1.52.4.6 E1 ECN: T13-592-Rev. A, 2-Sep-13 DWG: 619 Note Dimension L3 is for reference only. Revision: 2-Sep-13 1 Document Number: 64424 For technical questions, contact: pmostechsupport@vishay.com ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Application Note 826 RECOMMENDED MINIMUM PADS FOR DPAK (TO-252).224 (5.69).9 (2.286).87 (2.22).42 (1.668).243 (6.18).18 (4.572).55 (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 www.vishay.com Revision: 21-Jan-8 3
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