Standard Recovery Diodes, (Stud Version), 400 A DO-9 (DO-205AB) PRIMARY CHARACTERISTICS I F(AV) 400 A Package DO-9 (DO-205AB) Circuit configuration Single FEATURES Wide current range High voltage ratings up to 2400 V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types Compression bonded encapsulations Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Converters Power supplies Machine tool controls High power drives Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 480 A I F(AV) T C 120 C I F(RMS) 630 50 Hz 8250 A I FSM 60 Hz 8640 I 2 t 50 Hz 340 60 Hz 311 ka 2 s V RRM Range 1600 to 2400 V T J -40 to +190 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD400N/R VOLTAGE CODE V RRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 16 1600 1700 20 2000 2 24 2400 2500 I RRM MAXIMUM AT T J = T J MAXIMUM ma 15 Revision: 11-Jan-18 1 Document Number: 93548
FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 400 A Maximum average forward current 120 C I at case temperature F(AV) 180 conduction, half sine wave 480 A C Maximum RMS forward current I F(RMS) DC at 110 C case temperature 630 t = 10 ms No voltage 8250 Maximum peak, one-cycle forward, t = 8.3 ms reapplied 8640 A I non-repetitive surge current FSM t = 10 ms % V RRM 6940 t = 8.3 ms reapplied Sinusoidal half wave, 7270 initial t = 10 ms No voltage T J = T J maximum 340 reapplied Maximum I 2 t for fusing I 2 t = 8.3 ms 311 t ka 2 s t = 10 ms % V RRM 241 t = 8.3 ms reapplied 220 Maximum I 2 t for fusing I 2 t t = 0.1 to 10 ms, no voltage reapplied 3400 ka 2 s (16.7 % x x I Low level value of threshold voltage V F(AV) < I < x I F(AV) ), F(TO)1 0.80 T J = T J maximum V High level value of threshold voltage V F(TO)2 (I > x I F(AV) ), T J = T J maximum 0.85 Low level value of forward slope resistance r f1 (16.7 % x x I F(AV) < I < x I F(AV) ), T J = T J maximum High level value of forward slope resistance r f2 (I > x I F(AV) ), T J = T J maximum 0.51 Maximum forward voltage drop V FM I pk = 1500 A, T J = T J maximum, t p = 10 ms sinusoidal wave 1.62 V 0.55 mw THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating T temperature range J -40 to +190 C Maximum storage temperature range T Stg -55 to +200 Maximum thermal resistance, junction to case R thjc DC operation 0.11 Maximum thermal resistance, case to heatsink R thcs Mounting surface, smooth, flat and greased 0.04 K/W Maximum allowed mounting torque ± 10 % Not-lubricated threads 27 Nm Approximate weight 250 g Case style See dimensions (link at the end of datasheet DO-9 (DO-205AB) R thjc CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.020 0.013 120 0.023 0.023 90 0.029 0.031 60 0.042 0.044 0.073 0.074 T J = T J maximum Note The table above shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC K/W Revision: 11-Jan-18 2 Document Number: 93548
Maximum Allowable Case Temperature ( C) 190 SD400N/ R Serie s 180 R thjc (DC) = 0.11 K/ W 170 160 Conduction Angle 150 140 130 120 60 90 120 180 110 0 50 150 200 250 300 350 400 450 Maximum Allowable Case Temperature ( C) 190 180 170 160 150 140 130 120 R thjc (DC) = 0.11 K/W 90 Conduction Period 110 60 120 180 DC 0 200 300 400 500 600 700 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) 550 500 450 180 120 400 90 60 350 300 RMS Limit 250 200 150 Conduction Angle SD400N/R Series 50 T J = 190 C 0 0 50 150 200 250 300 350 400 30 50 70 90 110 130 150 170 190 Average Forward Current (A) Maximum Allowable Ambient Temperature ( C) 0.2 K/W 0.3 K/W 0.4 K/W 0.6 K/W 1K/W 1.8 K/W 0.1 K/W RthSA = 0.04 K/W - ΔR Fig. 3 - Forward Power Loss Characteristics Maximum Average Forward Power Loss (W) 800 700 600 500 400 300 DC 180 120 90 60 RMS Limit Conduction Period 0.1 K/W 0.2 K/W 0.3 K/W 0.4 K/W 0.6 K/W RthSA = 0.04 K/W - ΔR 200 SD400N/R Series T J = 190 C 0 0 200 300 400 500 600 700 30 50 70 90 110 130 150 170 190 Average Forward Current (A) Maximum Allowable Ambient Temperature ( C) 1K/W 1.8 K/W Fig. 4 - Forward Power Loss Characteristics Revision: 11-Jan-18 3 Document Number: 93548
Peak Half Sine Wave Forward Current (A) 8000 7000 6000 5000 4000 3000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 190 C @ 60 Hz 0.0083 s @ 50 Hz 0.0 s 2000 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave Forward Current (A) 9000 8000 7000 6000 5000 4000 3000 2000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J= 190 C No Voltage Reapplied Rated V RRM Reapplied SD400N/ R Se ries 0 0.01 0.1 1 Pulse Train Durat ion (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 00 Instantaneous Forward Current (A) 0 T = 25 C J T = 190 C J 0.5 1 1.5 2 2.5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Transient Thermal Impedance Z (K/ W) thjc 1 0.1 0.01 St e a d y St a t e Va lue : R thjc = 0.11 K/W (DC Operation) 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristic Revision: 11-Jan-18 4 Document Number: 93548
ORDERING INFORMATION TABLE Device code VS- SD 40 0 N 24 P C 1 2 3 4 5 6 7 8 1 - product 2 - Diode 3 - Essential part number 4-0 = standard recovery 5 - N = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) 6 - Voltage code x = V RRM (see Voltage Ratings table) 7 - P = stud base DO-9 (DO-205AB) 3/4" 16UNF-2A 8 - C = ceramic housing Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95301 Revision: 11-Jan-18 5 Document Number: 93548
Outline Dimensions DO-205AB (DO-9) DIMENSIONS in millimeters (inches) Ceramic housing 19 (0.75) 4 (0.16) 9.5 (0.37) MIN. 39 (1.53) DIA. 8.5 (0.33) NOM. C.S. 35 mm 2 (0.054 s.i.) 210 (8.27) ± 10 (0.39) DIA. 27.5 (1.08) 82 (3.23) MIN. SW 32 16 (0.63) 21 (0.82) 3/4"-16UNF-2A* *For metric device: M16 x 1.5 contact factory Document Number: 95301 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 09-Apr-08 1
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