DH2x6-18A Sonic Fast Recovery Diode RRM = 18 I FA = 2x 6 A t = 23 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs Part number DH2x6-18A Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips ery low leakage current ery short recovery time Improved thermal behaviour ery low Irm-values ery soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Isolation oltage: 3 ~ Industry standard outline RoHS compliant Epoxy meets UL 94- Base plate: Copper internally DCB isolated Advanced power cycling
DH2x6-18A Fast Diode Symbol RSM RRM I R I I RM Definition max. non-repetitive reverse blocking voltage reverse current, drain current max. reverse recovery current = 18 = 6 A; = 12 t rr reverse recovery time -di F = 8 A/µs R = 18 R J T = 125 C T J = 25 C T J = 1 C T J = 25 C T J = 1 C Ratings min. typ. max. 18 F forward voltage drop I = 6 A 2,1 FA F Conditions T C = 55 C J F threshold voltage T J = 15 C 1,28 for power loss calculation only r F slope resistance 11,1 mω R thermal resistance junction to case,6 K/W thjc thch max. repetitive reverse blocking voltage J average forward current thermal resistance case to heatsink = 12 A I = F 6 A = 12 A rectangular d =.5 P tot total power dissipation 2 W J J T = 125 C SM max. forward surge current t = 1 ms; (5 Hz), sine; = T = 45 C C J junction capacitance = 12 f = 1 MH 32 R J T J = 15 C C J,1 6 A 7 23 35 18 2 2 2,51 2,2 2,71 6 Unit µa ma A K/W 7 A R J pf A ns ns
DH2x6-18A Package SOT-227B (minibloc) Ratings Symbol Definition Conditions min. typ. max. Unit I RMS RMS current per terminal 1 A T J virtual junction temperature -4 15 C T op operation temperature -4 125 C T stg storage temperature -4 15 C Weight M D M T d Spp/App d Spb/Apb ISOL mounting torque 1,1 terminal torque 1,1 creepage distance on surface striking distance through air isolation voltage t = 1 second t = 1 minute terminal to terminal terminal to backside 5/6 Hz, RMS; I ISOL 1 ma 1,5 3,2 8,6 6,8 3 25 3 1,5 1,5 g Nm Nm mm mm Logo Product Marking Part No. XXXXX Zyyww abcd Assembly Line DateCode Assembly Code Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. DH2x6-18A DH2x6-18A Tube 1 57191 Similar Part Package oltage class DH2x61-18A SOT-227B (minibloc) 18 DH2x61-16A SOT-227B (minibloc) 16 Equivalent Circuits for Simulation * on die level T J = 15 C I R Fast Diode max threshold voltage 1,28 R max slope resistance * 9,3 mω
DH2x6-18A Outlines SOT-227B (minibloc) 2 1 3 4
DH2x6-18A Fast Diode 14 12 1 8 [A] 6 4 3 2 [nc] T J = 1 C = 12 R = 6 A 1 8 I 6 RM [A] 4 T J = 1 C =12 R = 6 A 4 2 T J =125 C T J = 25 C 1 2 3 F [] Fig. 1 Typ. rward current versus F 1 1 1 -di F Fig. 2 Typ. reverse recovery charge versus -di F 2 4 8 12 16 -di F Fig. 3 Typ. peak reverse current I RM versus -di F 2. 1.5 14 12 1 T J = 1 C R = 12 15 12 T J = 1 C =12 R 2.5 2. t fr K f 1. I RM t rr 8 [ns] 6 =6 A FR [] 9 6 1.5 [µs] 1..5 4 2 3 FR t fr.5. 4 8 12 16 T J [ C] Fig. 4 Dynamic parameters,i RM versus T J 4 8 12 16 -di F Fig. 5 Typ. recovery time t rr versus -di F. 2 4 6 8 1 di F Fig. 6 Typ. peak forward voltage FR & typ. forward recovery time t fr versus di F 1 Z thjc 1-1 [K/W] Constants for Z thjc calculation: i R thi (K/W) t i (s) 1.212.55 2.248.92 3.63.7 4.77.391 1-2 1-3 1-2 1-1 1 1 1 t [s] Fig. 7 Transient thermal resistance junction to case
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