HiPerED = M I = 2x A trr = ns High Performance ast ecovery Diode Low Loss and Soft ecovery Parallel legs Part number DSEP2x6-2A Backside: isolated 2 3 eatures / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips ery low leakage current ery short recovery time Improved thermal behaviour ery low Irm-values ery soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/I Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode ree wheeling diode ectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Isolation oltage: 3 ~ Industry standard outline ohs compliant Epoxy meets UL 9- Base plate: Copper internally DCB isolated Advanced power cycling Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. or information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. or any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
ast Diode Symbol SM M I I I M Definition max. reverse recovery current = = ; = 6 reverse recovery time = A/µs = T = 5 C T = 25 C T = C T = 25 C T = C atings typ. 3 A 85 25 max. forward voltage drop I = 2.2 T C= 8 C thermal resistance junction to case.6 K/W A max. non-repetitive reverse blocking voltage reverse current, drain current Conditions threshold voltage T = 5 C.5 for power loss calculation only r slope resistance 6.2 mω thjc thch max. repetitive reverse blocking voltage average forward current thermal resistance case to heatsink = A I = = A rectangular d =.5 P tot total power dissipation W T = 5 C SM max. forward surge current t = ms; (5 Hz), sine; = T = 5 C C J junction capacitance = 6 f = MHz 8 T = 5 C C min.. 2.8.52.92 6 Unit ma ma A K/W 8 A p A ns ns
Package atings Symbol Definition Conditions min. typ. max. Unit I MS MS current per terminal A T virtual junction temperature - 5 C T op operation temperature - 25 C Weight M D M T dspp/app dspb/apb SOT-227B (minibloc) T stg storage temperature - 5 C ISOL mounting torque. terminal torque. creepage distance on surface striking distance through air isolation voltage t = second t = minute terminal to terminal terminal to backside 5/6 Hz, MS; I ISOL ma.5 3.2 8.6 6.8 3 25 3.5.5 g Nm Nm mm mm Logo Product Marking Part No. XXXXX Zyyww abcd Assembly Line DateCode Assembly Code Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. DSEP2x6-2A DSEP2x6-2A Tube 76 Similar Part Package oltage class DSEP2x6-2A SOT-227B (minibloc) DSEP2x6-2B SOT-227B (minibloc) Equivalent Circuits for Simulation * on die level T = 5 C I ast Diode max threshold voltage.5 max slope resistance *.3 mω
Outlines SOT-227B (minibloc) 2 3
ast Diode 8 I 6 [A] T = 5 C C 25 C 5. 2.5. 7.5 [nc] 5. T = C = 6 = A 3 A 8 I M 6 [A] T = C = 6 = A 3 A 2.5 2 3 [] ig. orward current versus. [A/µs] ig. 2 Typ. reverse recov.charge versus 6 8 [A/µs] ig. 3 Typ. peak reverse current I M versus K f 2..5..5 I M 3 28 26 2 [ns] 2 T = C = 6 = A 3 A 6 5 3 [] T = C = t fr.2..8 t fr.6 [µs]..2. 8 6 T [ C] ig. Typ. dynamic parameters, I M versus T 6 8. 6 8 / dt [A/µs] -di [A/µs] ig. 5 Typ. recovery time ig. 6 Typ. peak forward voltage versus and t fr versus di. Z thjc. [K/W]....... t [s] ig. 7 Transient thermal resistance junction to case Constants for Z thjc calculation: i thi (K/W) t i (s).22.55 2.28.92 3.63.7.77.39