DATA SHEET Logic Order code Manufacturer code Description 83-366 HCF43BEY 43B QUAD EXCLUSIVE OR GATE Logic The enclosed information is believed to be correct, Information may change without notice due to product improvement. Users should ensure that the product is suitable for their use. E. & O. E. Page 1 of 13 Revision A 4/7/23 Sales: 126 751166 Technical: 126 835555 Fax: 126 7551188 Sales@rapidelec.co.uk Tech@rapidelec.co.uk www.rapidelectronics.co.uk
QUAD EXCLUSIVE-OR GATE MEDIUM-SPEED OPERATION t PHL =t PLH = 6ns (typ.) @ CL = 5pF and VDD VSS = 1V LOW OUTPUT IMPEDANCE : 5Ω (typ.) @ V DD V SS = 1V QUIESCENT CURRENT SPECIFIED TO 2V FOR HCC DEVICE STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS 5V, 1V, AND 15V PARAMETRIC RATINGS INPUT CURRENT OF 1nA AT 18V AND 25 C. FOR HCC DEVICE 1% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC TEN- TATIVE STANDARD N 13A, STANDARD SPE- CIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES EY (Plastic Package) M1 (Micro Package) F (Ceramic Frit Seal Package) C1 (Plastic Chip Carrier) ORDER CODES : HCC43BF HCF43BM1 HCF43BEY HCF43BC1 PIN CONNECTIONS DESCRIPTION The HCC43B (extended temperature range) and HCF43B (intermediate temperature range) are monolithic integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF43B types consist of four independent exclusive-or gates integrated on a single monolithic silicon chip. Each exclusive-or gate consists of four n-channel and four p-channel enhancement-type transistors. All inputs and outputs are protected against electrostatic effects. November 1996 1/12
FUNCTIONAL DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DD * Supply Voltage : HCC Types HCF Types.5 to + 2.5 to + 18 V V V i Input Voltage.5 to V DD +.5 V I I DC Input Current (any one input) ± 1 ma P tot Total Power Dissipation (per package) Dissipation per Output Transistor for T op = Full Package-temperature Range 2 1 mw mw T op Operating Temperature : HCC Types HCF Types 55 to + 125 4to+85 T stg Storage Temperature 65 to + 15 C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit V DD Supply Voltage : HCC Types HCF Types 3to18 3to15 V I Input Voltage to V DD V T op Operating Temperature : HCC Types HCF Types 55 to + 125 4to+85 C C V V C C TRUTH TABLE One of Four Identical Gates A B J 1 1 Where 1 = High level = Low level. 1 1 1 2/12
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Test Conditions Value Symbol Parameter V I V O I O V DD T Low * 25 C T High * Unit (V) (V) (µa) (V) Min. Max. Min. Typ. Max. Min. Max. I L Quiescent / 5 5 1.2 1 3 Current HCC /1 1 2.2 2 6 Types /15 15 4.2 4 12 /2 2 2.4 2 6 µa / 5 5 4.2 4 3 HCF Types /1 1 8.2 8 6 /15 15 16.2 16 12 V OH Output High / 5 < 1 5 4.95 4.95 4.95 Voltage /1 < 1 1 9.95 9.95 9.95 V /15 < 1 15 14.95 14.95 14.95 V OL Output Low 5/ < 1 5.5.5.5 Voltage 1/ < 1 1.5.5.5 V 15/ < 1 15.5.5.5 V IH Input High.5/4.5 < 1 5 3.5 3.5 3.5 Voltage 1/9 < 1 1 7 7 7 V 1.5/13.5 < 1 15 11 11 11 V IL Input Low 4.5/.5 < 1 5 1.5 1.5 1.5 Voltage 9/1 < 1 1 3 3 3 V 13.5/1.5 < 1 15 4 4 4 I OH Output / 5 2.5 5 2 1.6 3.2 1.15 Drive HCC / 5 4.6 5.64.51 1.36 Current Types /1 9.5 1 1.6 1.3 2.6.9 /15 13.5 15 4.2 3.4 6.8 2.4 ma / 5 2.5 5 1.53 1.36 3.2 1.1 HCF / 5 4.6 5.52.44 1.36 Types /1 9.5 1 1.3 1.1 2.6.9 /15 13.5 15 3.6 3. 6.8 2.4 I OL Output / 5.4 5.64.51 1.36 Sink HCC /1.5 1 1.6 1.3 2.6.9 Current Types /15 1.5 15 4.2 3.4 6.8 2.4 ma / 5.4 5.52.44 1.36 HCF Types /1.5 1 1.3 1.1 2.6.9 /15 1.5 15 3.6 3. 6.8 2.4 I IH,I IL Input HCC Leakage Types /18 18 ±.1 ±1 5 ±.1 ± 1 Any Input Current HCF Types /15 15 ±.3 ±1 5 ±.3 ± 1 µa C I Input Capacitance Any Input 5 7.5 pf * T Low = 55 CforHCC device : 4 C for HCF device. * T High = + 125 C forhcc device : + 85 C forhcf device. The Noise Margin for both 1 and level is : 1V min. with VDD = 5V, 2V min. with VDD = 1V, 2.5 V min. with VDD = 15V. 3/12
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25 C, C L = 5pF, R L = 2kΩ, typical temperature coefficient for all V DD =.3%/ C values, all input rise and fall time = 2ns) Symbol Parameter Test Conditions Value V CC (V) Min. Typ. Max. t PLH,t PHL Propagation Delay Time 5 14 28 1 65 13 15 5 1 t TLH,t THL Transition Time 5 1 2 1 5 1 15 4 8 Unit ns ns Typical Output Low (sink) Current Characteristics. Minimum Output Low (sink) Current Characteristics. Typical Output High (source) Current Characteristics. Minimum Output High (source) Current Characteristics. 4/12
TYPICAL APPLICATIONS EVEN-PARITY-BIT GENERATOR (1-3/4 x HCC/HCF43B). EVEN-PARITY-CHECKER (2 x HCC/HCF43B). ODD-PARITY-BIT GENERATOR (2 x HCC/HCF43B). ODD-PARITY CHECKER (2 x HCC/HCF43B). 5/12
TYPICAL APPLICATIONS (continued) 8-BIT COMPARATOR 8-BIT TWO S COMPLEMENT ADDER-SUBSTRACTOR 6/12
Table 1 : Two s Complement Numbers and Their Equivalent Decimal Values. X8 X7 X6 X5 X4 X3 X2 X1 X8 X7 X6 X5 X4 X3 X2 X1 = 1 1 1 1 1 1 1 1 = -1 1 = 1 1 1 1 1 1 1 1 = -2 1 = 2 1 1 1 1 1 1 1 = -3 1 1 = 3 1 1 1 1 1 1 = -4 1 1 1 1 1 1 1 = -5 1 1 1 1 1 1 = 126 1 1 = -127 1 1 1 1 1 1 1 = 127 1 = -128 The two s complement adder-substractor can add or substract any two of the numbers in table 1. For example : a) 2 SIGN + = BIT 5 X 1 2 + Y 1 1 1 1 1 1 1 5 + CI S 1 1 1 1 1 1 1 = 3 CO TEST CIRCUITS SIGN b) 2 BIT = X 1 1 1 1 1 1 1 2 + 5 Y 1 1 1 1 1 1 1 5 Y 1 + CL 1 S 1 1 1 =3 CO Quiescent Device Current. Input Voltage. Input Leakage Current. 7/12
Plastic DIP14 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. a1.51.2 B 1.39 1.65.55.65 b.5.2 b1.25.1 D 2.787 E 8.5.335 e 2.54.1 e3 15.24.6 F 7.1.28 I 5.1.21 L 3.3.13 Z 1.27 2.54.5.1 P1A 8/12
Ceramic DIP14/1 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 2.787 B 7..276 D 3.3.13 E.38.15 e3 15.24.6 F 2.29 2.79.9.11 G.4.55.16.22 H 1.17 1.52.46.6 L.22.31.9.12 M 1.52 2.54.6.1 N 1.3.46 P 7.8 8.5.37.317 Q 5.8.2 P53C 9/12
SO14 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 1.75.68 a1.1.2.3.7 a2 1.65.64 b.35.46.13.18 b1.19.25.7.1 C.5.19 c1 45 (typ.) D 8.55 8.75.336.344 E 5.8 6.2.228.244 e 1.27.5 e3 7.62.3 F 3.8 4..149.157 G 4.6 5.3.181.28 L.5 1.27.19.5 M.68.26 S 8 (max.) P13G 1/12
PLCC2 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 9.78 1.3.385.395 B 8.89 9.4.35.356 D 4.2 4.57.165.18 d1 2.54.1 d2.56.22 E 7.37 8.38.29.33 e 1.27.5 e3 5.8.2 F.38.15 G.11.4 M 1.27.5 M1 1.14.45 P27A 11/12
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in lifesupport devices or systems without express written approval of SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSONMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 12/12