FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 3V N-Channel Trench MOSFET TTG9N3AT APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package Marking TTG9N3AT DFN5 6 9N3AT Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (V GS = V) V DSS 3 V Continuous Drain Current I D 9 A Pulsed Drain Current (note1) I DM 36 A Gate-Source Voltage V GSS ±2 V Single Pulse Avalanche Energy (note2) E AS 72 mj Avalanche Current (note1) I As 22 A Power Dissipation (T C = 25ºC) P D 9.6 W Operating Junction and Storage Temperature Range T J, T stg -55~+15 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case R thjc 1.38 Thermal Resistance, Junction-to-Ambient R thja 6 ºC/W V1. 1
TTG9N3AT Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Value Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = 25µA 3 -- -- V Zero Gate Voltage Drain Current I V DS = 3V, V GS = V, T J = 25ºC -- -- 1 DSS V DS = 3V, V GS = V, T J = 15ºC -- -- 1 μa Gate-Source Leakage I GSS V GS = ±12V -- -- ±1 na Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25µA 1. 1.7 2.4 V Drain-Source On-Resistance (Note3) R DS(on) V GS = 1V, I D = 3A -- 3.6 5 mω V GS = 4.5V, I D = 3A -- 5 7 mω Forward Transconductance (Note3) g fs V DS = 1V, I D =2A -- 21.6 -- S Dynamic Input Capacitance C iss V GS = V, -- 4184 -- Output Capacitance C oss V DS = 15V, -- 416 -- f = 1.MHz Reverse Transfer Capacitance C rss -- 331 -- pf Total Gate Charge Q g V DD = 15V, I D = 3A, -- 62 -- Gate-Source Charge Q gs V GS = 1V -- 7 -- Gate-Drain Charge Q gd -- 13 -- nc Turn-on Delay Time t d(on) -- 13 -- Turn-on Rise Time t r V DD = 15V, I D = 3A, -- 17 -- Turn-off Delay Time t d(off) R G = 3Ω -- 42 -- ns Turn-off Fall Time t f -- 13 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current I S -- -- 9 T C = 25ºC Pulsed Diode Forward Current I SM -- -- 36 A Body Diode Voltage V SD T J = 25ºC, I SD = 3A, V GS = V -- -- 1.2 V Reverse Recovery Time t rr IF = 3A, -- 4 -- ns Reverse Recovery Charge Q rr di F /dt = 1A/μs -- 88 -- nc Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. V DD = 3V, R G = 25Ω, Starting T J = 25 C 3. Pulse Test: Pulse Width 3μs, Duty Cycle 1% V1. 2
TTG9N3AT Typical Characteristics T J = 25ºC, unless otherwise noted 1 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1 V DS = 5V V GS, Gate-to-Source Voltage (V) R DS(on), On-Resistance (mω) I D, Drain Current (A) 1 8 6 4 2 8 6 4 2 8 6 4 2 1 2 3 4 5 V DS, Drain-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current T J = 25ºC V GS = 4.5V V GS = 1V 5 1 15 2 25 3 I D, Drain Current (A) Figure 5. Gate Charge V DD = 15V 1V 7V 4.5V 3V 2.5V 1 2 3 4 5 6 7 I s, Source Current (A) Capacitance (pf) I D, Drain Current (A) 8 6 4 2 6 5 4 3 2 1 1 2 1 1 1 1-1 1-2 1-3 1-4 1-5 1 2 3 4 V GS, Gate-to-Source Voltage (V) C rss Figure 4. Capacitance C iss C oss V DS, Drain-to-Source Voltage (V) Figure 6. Body Diode Forward Voltage T J = 125ºC T J = 125ºC T J = 25ºC V GS = f = 1MHz 5 1 15 2 25 3 T J = 25ºC.2.4.6.8 1 Q g, Total Gate Charge (nc) V SD, Source-to-Drain Voltage (V) V1. 3
TTG9N3AT Typical Characteristics T J = 25ºC, unless otherwise noted R DS(on), (Normalized) 1.6 1.4 1.2 1.8.6 Figure 7. On-Resistance vs. Junction Temperature V GS = 1V I D = 3A V GS(th), (Variance).4.2 -.2 -.4 -.6 Figure 8. Threshold Voltage vs. Junction Temperature I D = 25µA.4-5 -25 25 5 75 1 125 15 -.8-5 -25 25 5 75 1 125 15 T J, Junction Temperature (ºC) T J, Junction Temperature (ºC) Figure 9. Transient Thermal Impedance Figure 1. Safe operation area for 1 1 1 3 Z thjc, Thermal Impedance (Normalized) 1 1-1 1-2 1-4 1-3 1-2 1-1 1 1 1 1-5 T p, Pulse Width (s) D =.5 D =.2 D =.1 D =.5 D =.2 D =.1 Single Pulse I D, Drain Current(A) 1 2 1 1 1 1-1 1-2 t p = 1us t p = 1us t p = 1ms t p = 1ms DC 1-2 1-1 1 1 1 1 2 V DS, Drain-Source Voltage(V) V1. 4
Figure A:Gate Charge Test Circuit and Waveform TTG9N3AT Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform V1. 5
TTG9N3AT DFN5 6 6 V1.
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