NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on) Rating Operated at Low Logic Level Gate Drive These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Applications Load/Power Switching Interfacing, Logic Switching Battery Management for Ultra Small Portable Electronics V (BR)DSS R DS(on) TYP I D Max.8 @.5 V 78 ma V.5 @.5 V ma.7 @.8 V ma.95 @.5 V ma SOT 7 ( LEAD) MAXIMUM RATINGS ( unless otherwise stated) Parameter Symbol Value Unit Drain to Source Voltage V DSS V Gate to Source Voltage V GS ± V Continuous Drain Current (Note ) Power Dissipation (Note ) T A = 5 C I D 78 ma T A = 85 C 57 t 5 s T A = 5 C 87 T A = 5 C P D 5 mw Top View Gate Source Drain Continuous Drain Current (Note ) Power Dissipation (Note ) Pulsed Drain Current t 5 s 55 T A = 5 C I D ma T A = 85 C 8 T A = 5 C P D mw t p = s I DM. A SOT 7 CASE AA STYLE 5 MARKING DIAGRAM KD M KD = Specific Device Code M = Date Code Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (/8 from case for s) T J, T STG 55 to 5 C T L C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Surface mounted on FR board using in sq pad size (Cu area =.7 in sq [ oz] including traces). Surface mounted on FR board using the minimum recommended pad size Device Package Shipping NTK9PTG NTK9PTH NTK9PT5G NTK9PT5H ORDERING INFORMATION SOT 7 Pb Free / Tape & Reel 8 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Semiconductor Components Industries, LLC, September, Rev. Publication Order Number: NTK9P/D
NTK9P THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction to Ambient (Note ) R JA 8 C/W Junction to Ambient t = 5 s (Note ) R JA 8 Junction to Ambient Minimum Pad (Note ) R JA. Surface mounted on FR board using in sq pad size (Cu area =.7 in sq [ oz] including traces). Surface mounted on FR board using the minimum recommended pad size MOSFET ELECTRICAL CHARACTERISTICS ( unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage V (BR)DSS V GS = V, I D = 5 A V Drain to Source Breakdown Voltage Temperature Coefficient V (BR)DSS /T J I D = 5 A, Reference to 5 C.5 mv/ C Zero Gate Voltage Drain Current I DSS VGS = V, V DS = V.. Gate to Source Leakage Current I GSS V DS = V, V GS = ±.5 V ±. A ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V GS(TH) V GS = V DS, I D = 5 A.5. V Negative Threshold Temperature Coefficient V GS(TH) /T J. Drain to Source On Resistance V GS =.5 V, I D = 78 ma.8.8 V GS =.5 V, I D = ma.5.7 R DS(on) V GS =.8 V, I D = ma.7.95 V GS =.5 V, I D = ma.95. Forward Transconductance g FS V DS = V, I D = 5 ma. S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C ISS 7 Output Capacitance C OSS V GS = V, f = MHz, V DS = V 5 5 pf Reverse Transfer Capacitance C RSS 9. 5 SWITCHING CHARACTERISTICS, V GS =.5 V (Note ) Turn On Delay Time t d(on) 9. Rise Time t r V GS =.5 V, V DS = V, 5.8 TurnOff Delay Time t d(off) I D = ma, R G =.7 ns Fall Time t f. DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V SD V GS = V, I S = 5 ma.8. V Reverse Recovery Time t RR Charge Time t a V GS = V, d ISD /d t = A/ s,.8 Discharge Time t b I S =. A, V DD = V. A mv/ C. ns Reverse Recovery Charge Q RR 5. nc 5. Pulse Test: pulse width = s, duty cycle = %. Switching characteristics are independent of operating junction temperatures
NTK9P TYPICAL CHARACTERISTICS..5..5.5.5 V GS =.5 V to.5 V.5.5.5 5. V. V.8 V. V.5 V. V 5.5.8.5..9...75 V DS 5 V.5 T J = 55 C.75.5 V DS, DRAIN TO SOURCE VOLTAGE (V) V GS, GATE TO SOURCE VOLTAGE (V) Figure. On Region Characteristics Figure. Transfer Characteristics..5..5..5...8....5.5 V GS, GATE VOLTAGE (V) Figure. On Resistance vs. Gate to Source Voltage V GS =.5 V, I D = 55 ma 5 5.5 5.5 V GS =.5 V, I D = ma 9 T J, JUNCTION TEMPERATURE ( C) 5 Figure 5. On Resistance Variation with Temperature I D =.78 A V GS =.8 V, I D = ma 5.5 V GS =.5 V, I D = ma 5 I DSS, LEAKAGE (na).8.7..5...., 5..7.9...7.9 Figure. On Resistance vs. Drain Current and Gate Voltage V GS = V T J = 5 C V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. Drain to Source Leakage Current vs. Voltage 5 V GS =.5 V V GS =.5 V
NTK9P TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) 5 9 C iss C oss V GS = V t, TIME (ns) V DD = V I D = ma V GS =.5 V t d(off) t f t d(on) t r C rss 8 8 DRAIN TO SOURCE VOLTAGE (V) R G, GATE RESISTANCE ( ) Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance I S, SOURCE CURRENT (A)..5..5 V GS = V 5 C 5 C 5 C T J = 55 C..5..7.8.9. V SD, SOURCE TO DRAIN VOLTAGE (V).. Figure 9. Diode Forward Voltage vs. Current
NTK9P PACKAGE DIMENSIONS SOT 7 CASE AA ISSUE D b X e D TOP VIEW X X L BOTTOM VIEW E Y X b.8 X Y X L A H E C SIDE VIEW RECOMMENDED SOLDERING FOOTPRINT* X. X.7 NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.5M, 99.. CONTROLLING DIMENSION: MILLIMETERS.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS DIM MIN NOM MAX A.5.5.55 b.5..7 b.5..7 C.7..7 D.5..5 E.75.8.85 e. BSC H E.5..5 L.9 REF L.5..5 STYLE 5: PIN. GATE. SOURCE. DRAIN PACKAGE OUTLINE.5 X.5. DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5, Denver, Colorado 87 USA Phone: 75 75 or 8 8 Toll Free USA/Canada Fax: 75 7 or 8 87 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 8 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 8 587 5 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTK9P/D