FDS935 Dual P-Channel PowerTrench MOSFET - V, -. A, 3 mω Features Max r DS(on) = 3 mω at V GS = - V, I D = -. A Max r DS(on) = 7 mω at V GS = -.5 V, I D = -.9 A High performance trench technology for extremely low r DS(on) High power and current handling capability in a widely used surface mount package % UIL Tested RoHS Compliant D D Pin D D S G S G General Description This P-channel MOSFET is produced using ON Semiconductor s advanced PowerTrench process that has been optimized for r DS(on), switching performance and ruggedness. Applications Load Switch Synchronous Rectifier D D D D 5 7 Q Q 3 G S G S SO- MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage - V V GS Gate to Source Voltage ± V Drain Current -Continuous -. I D -Pulsed - E AS Single Pulse Avalanche Energy (Note 3) 37 mj Power Dissipation T A = 5 C (Note a) 3. P D Power Dissipation T A = 5 C (Note b). T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics A W R θjc Thermal Resistance, Junction to Case (Note ) R θja Thermal Resistance, Junction to Ambient (Note a) 7 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDS935 FDS935 SO- 3 mm 5 units Semiconductor Components Industries, LLC. October-7, Rev.3 Publication Order Number: FDS935/D
Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = -5 μa, V GS = V - V ΔBV DSS Breakdown Voltage Temperature ΔT J Coefficient I D = -5 μa, referenced to 5 C - mv/ C I DSS Zero Gate Voltage Drain Current V DS = - V, V GS = V - μa I GSS Gate to Source Leakage Current V GS = ± V, V DS = V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = -5 μa - -. -3 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient I D = -5 μa, referenced to 5 C 5 mv/ C V GS = - V, I D = -. A 3 r DS(on) Static Drain to Source On Resistance V GS = -.5 V, I D = -.9 A 7 7 mω V GS = - V, I D = -. A,T J = 5 C 9 3 g FS Forward Transconductance V DS = - V, I D = -. A. S Dynamic Characteristics C iss Input Capacitance 79 pf V DS = - V, V GS = V, C oss Output Capacitance 7 3 pf f = MHz C rss Reverse Transfer Capacitance 3 pf R g Gate Resistance Ω Switching Characteristics t d(on) Turn-On Delay Time 5 ns t r Rise Time V DD = - V, I D = -. A, 3 ns t d(off) Turn-Off Delay Time V GS = - V, R GEN = Ω 3 ns t f Fall Time 3 ns Q g(tot) Total Gate Charge V GS = V to - V 3 9 nc Q g(tot) Total Gate Charge V GS = V to -5 V V DD = - V, 7 nc Q gs Gate to Source Charge I D = -. A. nc Q gd Gate to Drain Miller Charge. nc Drain-Source Diode Characteristics V GS = V, I S = -. A (Note ) -. -.3 V SD Source to Drain Diode Forward Voltage V V GS = V, I S = -.3 A (Note ) -. -. t rr Reverse Recovery Time 9 3 ns I F = -. A, di/dt = 3 A/μs Q rr Reverse Recovery Charge 3 5 nc NOTES:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. a)7 C/W when mounted on a in pad of oz copper b)35 C/W when mounted on a minimun pad. Pulse Test: Pulse Width < 3μs, Duty cycle <.%. 3. Starting T J = 5 C, L = 3. mh, I AS = -5. A, V DD = -V, V GS = -V.
Typical Characteristics T J = 5 C unless otherwise noted -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = - V V GS = -5 V V GS = - V PULSE DURATION = μs 3 5........ Figure. V GS = -3.5 V V GS = -3 V -V DS, DRAIN TO SOURCE VOLTAGE (V) I D = -. A V GS = - V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE.5 PULSE DURATION = μs. On-Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage. -75-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized On- Resistance vs Junction Temperature rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) 3..5..5. Figure. V GS = -3 V V GS = - V -I D, DRAIN CURRENT (A) I D = -. A T J = 5 o C T J = 5 o C V GS = -3.5 V V GS = -5 V V GS = - V PULSE DURATION = μs -V GS, GATE TO SOURCE VOLTAGE (V) On-Resistance vs Gate to Source Voltage -ID, DRAIN CURRENT (A) PULSE DURATION = μs V DS = -5 V T J = 5 o C T J = 5 o C T J = -55 o C 3 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 5 o C T J = 5 o C T J = -55 o C........ -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Source to Drain Diode Forward Voltage vs Source Current 3
Typical Characteristics T J = 5 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE (V) -IAS, AVALANCHE CURRENT (A) I D = -. A 3 9 5 Figure 7....... V DD = - V V DD = - V Q g, GATE CHARGE (nc) V DD = - V. -V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure. Capacitance vs Drain to Source Voltage T J = 5 o C T J = 5 o C.. t AV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability T J = o C CAPACITANCE (pf) -I D, DRAIN CURRENT (A).5..5..5 f = MHz V GS = V Limited by package R θja = 7 o C/W V GS = -.5 V V GS = - V C iss C oss C rss. 5 5 75 5 5 T A, Ambient TEMPERATURE ( o C) Figure. Maximum Continuous Drain Current vs Ambient Temperature -ID, DRAIN CURRENT (A). THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED R θja = 35 o C/W. T A = 5 o C DC.5. 3 -V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area us ms ms ms s s P(PK), PEAK TRANSIENT POWER (W) V GS = - V SINGLE PULSE R θja = 35 o C/W T A = 5 o C.5 - -3 - - t, PULSE WIDTH (s) Figure. Single Pulse Maximum Power Dissipation
Typical Characteristics T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θja.. DUTY CYCLE-DESCENDING ORDER D =.5...5.. SINGLE PULSE R θja = 35 o C/W. - -3 - - t, RECTANGULAR PULSE DURATION (sec) Figure 3. Junction-to-Ambient Transient Thermal Response Curve P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A 5
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