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FPF1C2P5MF7AM F1 Module solution for PV-Application General Description Fairchild's brand-new DC-AC module is designed for a power stage that needs more compact design. And the Press-fit technology provides simple and reliable mounting. This module is optimized for the application such as solar inverter where a high efficiency and robust design are needed. Electrical Features High Efficiency Low Conduction and Switching losses Low V CE(sat) : 1.1 V typ. @ Ic = 3 A Low R DS(ON) : 9 mω max. Fast Recovery Body Diode Mechanical Features Compact size : F1 Package Press-fit contact technology Package Code: F1 July. 214 Applications Solar Inverter Certification UL approved (E2924) Internal Circuit Diagram Absolute Maximum Ratings T C = 25 o C unless otherwise noted. Symbol Description Rating Units Rectifier Diode V RRM Peak Repetitive Reverse Voltage 62 V I Fav Diode Continuous Forward Current @ T C = 8 C 27 A I FSM Diode Maximum Forward Surge Current 245 A I 2 t I 2 t value 3 A 2 s P D Maximum Power Dissipation @ T C = 25 C 77 W T J Operating Junction Temperature -4 to +15 C 214 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
Absolute Maximum Ratings T C = 25 C unless otherwise noted. (Continued) Symbol Description Rating Units High-side IGBT V CES Collector-Emitter Voltage 62 V V GES Gate-Emitter Voltage ± 2 V I C Collector Current @ T C = 8 C 39 A I CM Pulsed Collector Current 9 A I F Diode Continuous Forward Current @ T C = 8 C 22 A I FM Diode Maximum Forward Current 9 A P D Maximum Power Dissipation @ T C = 25 C 231 W T J Operating Junction Temperature -4 to +15 C Low-side MOSFET V DSS Drain-Source Voltage 62 V V GSS Gate-Source Voltage ± 2 V I D Continuous Drain Current @ T C = 25 C 36 A @ T C = 8 C 27 A I DM Pulsed Drain Current Limited by T J max. 156 A I S Continuous Source-Drain Forward Current 36 A I SM Maximum Pulsed Source-Drain Forward Curren56 A P D Maximum Power Dissipation @ T C = 25 C 25 W T J Operating Junction Temperature -4 to +15 C Module T STG Storage Temperature -4 to +125 C V ISO Isolation Voltage @ AC 1 MIN 25 V Iso._Material Internal Isolation Material Al 2 O 3 F MOUNT Mounting Force per Clamp 2 to 5 N Weight Typ. 22 g Creepage Terminal to Heatsink 11.5 mm Terminal to Terminal 6.3 mm Clearance Terminal to Heatsink 1. mm Terminal to Terminal 5. mm Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity / Tray FPF1C2P5MF7AM FPF1C2P5MF7AM F1 Tray 22 214 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
Electrical Characteristics T C = 25 C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Units Rectifier Diode V F Diode Forward Voltage I F = 3 A - - 1.9 V I F = 3 A @T C = 125 C - 1.45 - V I R Reverse Leakage Current V R = 62 V - - 25 μa R θjc Thermal Resistance of Junction to Case per Diode - - 1.62 C/W High-side IGBT Off Characteristics BV CES Collector-Emitter Breakdown Voltage V GE = V, I C = 1 ma 62 - - V I CES Collector Cut-off Current V CE = V CES, V GE = V - - 25 μa I GES Gate-Emitter Leakage Current V GE = V GES, V CS = V - - 2.5 μa On Characteristics V GE(th) Gate-Emitter Threshold Voltage V GE = V CE, I C = 3 ma 4 5.7 7 V V CE(sat) Collector-Emitter Saturation Voltage I C = 3 A, V GE = 15 V - 1.1 1.6 V I C = 3 A, V GE = 15 V @T C = 125 C - 1. - V I C = 6 A, V GE = 15 V - 1.4 - V Switching Characteristics Q g Total Gate Charge V DS = 38 V, V GS = V...+15 V, I D = 3 A - 214 - nc R θjc Thermal Resistance of Junction to Case per IGBT - -.54 C/W * Note : High-side IGBT is optimized for line frequency switching such as 5/6 Hz. High-Side FWD V FM Diode Forward Voltage I F = 15 A, V GS = V - 1.75 2.25 V t rr Reverse Recovery Time I F = 15 A - 3 - ns I rr Reverse Recovery Current di F /dt = 165 A/μs - 27 - A Q rr Reverse Recovery Charge - 45 - nc t rr Reverse Recovery Time I F = 15 A - 43 ns I rr Reverse Recovery Current di F /dt = 15 A/μs @T C = 125 C - 38 - A Q rr Reverse Recovery Charge - 814 - nc R θjc Thermal Resistance of Junction to Case per Diode - - 1.61 C/W 214 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
Electrical Characteristics T C = 25 C unless otherwise noted. (Continued) Symbol Parameter Conditions Min. Typ. Max. Units Low-Side MOSFET Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = V, I D = 1 ma 62 - - V I DSS Zero Gate Voltage Drain Current V DS = 62 V, V GS = V - - 25 μa I GSS Gate-Body Leakage Current, Forward V GS = 2 V, V DS = V 2.5 μa On Characteristics V GS(th) Gate-Source Threshold Voltage V GS = V DS, I D = 25 ma 2.7 3.8 5.3 V R DS(ON) Static Drain-Source On-Resistance I D = 27 A, V GS = 1 V - - 9 mω I D = 27 A, V GS = 1 V @T C = 125 C - 135 - mω I D = 47 A, V GS = 1 V - 76 - mω V SD Source-Drain Diode Forward Voltage I SD = 27 A, V GS = V - - 1.5 V I SD = 47 A, V GS = V - 1.3 - V Switching Characteristics t d(on) Turn-On Delay Time V CC = 38 V - 57 - ns t I D = 27 A r Rise Time - 14 - ns V GS = 1 V t d(off) Turn-Off Delay Time - 24 - ns R G = 1 Ω t f Fall Time Inductive Load - 2 - ns E ON Turn-On Switching Loss per Pulse T C = 25 C - 44 - μj E OFF Turn-Off Switching Loss per Pulse - 113 - μj t d(on) Turn-On Delay Time V CC = 38 V - 53 - ns t I D = 27 A r Rise Time - 16 - ns V GS = 1 V t d(off) Turn-Off Delay Time - 257 - ns R G = 1 Ω t f Fall Time Inductive Load - 2 - ns E ON Turn-On Switching Loss per Pulse T C = 125 C - 719 - μj E OFF Turn-Off Switching Loss per Pulse - 124 - μj Q g Total Gate Charge V DS = 38 V, V GS = V...+1 V, I D = 27 A - 155 - nc R θjc Thermal Resistance of Junction to Case per Chip - -.5 C/W 214 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
Typical Performance Characteristic Fig 1. Typical Output Characteristics - IGBT I C, Collector Current [A] 9 6 3 VGE = 2 V 15 V 12 V 1 V 8 V T C = 25 o C..5 1. 1.5 2. V CE, Collector-Emitter Voltage [V] Fig 3. Typical Saturation Voltage Characteristics - IGBT I C, Collector Current [A] 9 6 3 Common Emitter VGE = 15 V TC = 25 C TC = 8 C TC = 125 C..5 1. 1.5 2. V CE, Collector-Emitter Voltage [V] Fig 2. Typical Output Characteristics - IGBT I C, Collector Current [A] 9 6 3 VGE = 2 V 15 V 12 V 1 V 8 V T C = 125 o C..5 1. 1.5 2. V CE, Collector-Emitter Voltage [V] Fig 4. Transient Thermal Response Curve - IGBT Z θjc (t), Thermal Response [ C/W] 1 1.1.5.3.1.5.2.1.1.5 * Notes : P DM t 2 1. ZθJC(t) =.54 C/W Max. 2. Duty Factor, D = t1/t2 Single Pulse 3. TJ - TC = PDM*ZθJC(t) 1E-3 1E-5 1E-4 1E-3.1.1 1, Rectangular Pulse Duration [sec] Fig 5. Typical Forward Voltage Drop vs. Forward Current - High-Side FWD I F, Forward Current [A] 9 75 6 45 3 15 TC = 25 C TC = 8 C TC = 125 C..5 1. 1.5 2. 2.5 3. 3.5 V F, Forward Voltage [V] Fig 6. Transient Thermal Response Curve - High-Side FWD Z θjc (t), Thermal Response [ C/W] 1 1.5 P DM.3.1.1.5.2 t 2.1.1.5 * Notes : Single Pulse 1. ZθJC(t) = 1.61 C/W Max. 2. Duty Factor, D = t1/t2 3. TJ - TC = PDM*ZθJC(t) 1E-3 1E-5 1E-4 1E-3.1.1 1, Rectangular Pulse Duration [sec] 214 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com
Typical Performance Characteristic (Continued) Fig 7. On-Region Characteristics - MOSFET ID, Drain Current[A] I D, Drain Current[A] 16 16 14 14 12 12 1 1 8 8 6 6 4 4 VGS VGS = = 2V2 V 15V15 V 1V1 V 8V8 V 6V6 V 2 2 * * Note: 1. 1. 25μs pulse test test 5 5 1 1 15 15 2 2 V DS, V DS, Drain-Source Voltage[V] Fig 9. On-Resistance Variation vs. Temperature - MOSFET R DS(ON) [Ω], [Normalized] Drain to Source On-Resistance 2.25 2. 1.75 1.5 1.25 1..75 * Notes: 1. VGS = 1 V 2. ID = 27 A.5-5 -25 25 5 75 1 125 15 175 T C, Case Temperature [ C] Fig 8. On-Resistance Variation vs. Drain Current and Gate Voltage - MOSFET R DS(ON) [Ω], Drain to Source On-Resistance.2.16.12.8 VGS = 1 V VGS = 2 V.4 4 8 12 16 I D, Drain Current [A] Fig 1. Body Diode Forward Voltage Variation vs. Source Current and Temperature - MOSFET I S, Reverse Drain Current [A] 15 12 9 6 3 TC = 25 C TC = 8 C TC = 125 C.3.6.9 1.2 1.5 1.8 2.1 V SD, Body Diode Forward Voltage [V] Fig 11. Turn-Off Loss vs. Gate Resistor Values - MOSFET E off, Turn-off Loss [mj].5.4.3.2.1 * Notes: 1. with an inductive load 2. VDS = 38 V, ID = 27 A 3. VGS = 1 V T C = 125 C T C = 25 C Fig 12. Turn-On Loss vs. Gate Resistor Values - MOSFET E on, Turn-on Loss [mj] 1.4 1.2 1..8.6.4.2 * Notes: 1. with an inductive load 2. VDS = 38 V, ID = 27 A 3. VGS = 1 V T C = 125 C T C = 25 C. 5 1 15 2 25 3 35 R g, Gate Resistance [Ω]. 5 1 15 2 25 3 35 R g, Gate Resistance [Ω] 214 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com
Typical Performance Characteristic (Continued) Fig 13. Turn-Off Loss vs. Drain Current - MOSFET E off, Turn-off Loss [uj] 2 16 12 8 4 * Notes: 1. with an inductive load 2. VDS = 38 V, ID = 27 A 3. VGS = 1 V 4. Rg = 1 Ω T C = 125 C T C = 25 C 5 1 15 2 25 3 35 I D, Drain Current [A] Fig 15. Transient Thermal Response Curve - MOSFET Z θjc (t), Thermal Response [ C/W] 1.1.1.5.3.1.5.2.1.5 P DM t 2 1E-3 Single Pulse * Notes : 1. ZθJC(t) =.5 C/W Max. 2. Duty Factor, D = t1/t2 3. TJ - TC = PDM*ZθJC(t) 1E-4 1E-5 1E-4 1E-3.1.1 1, Rectangular Pulse Duration [sec] Fig 14. Turn-On Loss vs. Drain Current - MOSFET E on, Turn-on Loss [mj] 1..8.6.4.2 * Notes: 1. with an inductive load 2. VDS = 38 V, ID = 27 A 3. VGS = 1 V 4. Rg = 1 Ω T C = 125 C T C = 25 C. 5 1 15 2 25 3 35 I D, Drain Current [A] Fig 16. Typical Forward Voltage Drop vs. Forward Current - Rectifier Diode I F, Forward Current [A] 9 75 6 45 3 15 TC = 25 C TC = 8 C TC = 125 C..5 1. 1.5 2. 2.5 V F, Forward Voltage [V] Fig 17. Transient Thermal Response Curve - Rectifier Diode 1 Z θjc (t), Thermal Response [ C/W] 1.5.3 P DM.1.1.5.2 t 2.1.1.5 * Notes : Single Pulse 1. ZθJC(t) = 1.62 C/W Max. 2. Duty Factor, D = t1/t2 3. TJ - TC = PDM*ZθJC(t) 1E-3 1E-5 1E-4 1E-3.1.1 1, Rectangular Pulse Duration [sec] 214 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com
Internal Circuit Diagram Package Outlines [mm] IN2 IN2 IN1 IN1 D1 D4 RTN1 RTN1 D2 G1 E1 D3 GM1 SM1 DC+ RTN2 G2 E2 OUT1 OUT1 GM2 SM2 RTN2 DC+ RTN2 RTN2 OUT2 OUT2 214 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
214 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 811 USA Phone: 33 675 2175 or 8 344 386 Toll Free USA/Canada Fax: 33 675 2176 or 8 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: 8 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 291 Japan Customer Focus Center Phone: 81 3 5817 15 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com
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