V DS 4 V PD -9778 IRLH734PbF HEXFET Power MOSFET R DS(on) max (@V GS = V) 3.3 mω Q g (typical) 39 nc I D (@T c(bottom) = 25 C) 5 i PQFN 5X6 mm pplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick pplications Boost Converters Features and Benefits Features Benefits Low R DSon ( 4.7mW @ V GS = 4.5V ) Lower Conduction Losses Low Thermal Resistance to PCB (<.2 C/W) Enables better thermal dissipation Low Profile (<.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Form Quantity IRLH734TRPBF PQFN 5mm x 6mm Tape and Reel 4 IRLH734TR2PBF PQFN 5mm x 6mm Tape and Reel 4 Note bsolute Maximum Ratings V DS V GS I D @ T = 25 C I D @ T = 7 C I D @ T C(Bottom) = 25 C I D @ T C(Bottom) = C I D @ T C = 25 C I DM P D @T = 25 C P D @ T C(Bottom) = 25 C T J T STG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, V GS @ V Continuous Drain Current, V GS @ V Continuous Drain Current, V GS @ V Continuous Drain Current, V GS @ V Continuous Drain Current, V GS @ V (Package Limited) Pulsed Drain Current c Power Dissipation g Power Dissipation g Linear Derating Factor g Operating Junction and Storage Temperature Range Max. Units 4 ± 6 V 26 2 34hi 85hi 64 3.6 4 W.29 W/ C -55 to 5 C Notes through are on page 9 www.irf.com 4/24/2 5i
IRLH734PbF Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV DSS Drain-to-Source Breakdown Voltage 4 V ΔΒV DSS /ΔT J Breakdown Voltage Temp. Coefficient 37 mv/ C Reference to 25 C, I D =.m R DS(on) Static Drain-to-Source On-Resistance 2.8 3.3 mω V GS = V, I D = 5 e 3.9 4.9 V GS = 4.5V, I D = 4 e V GS(th) Gate Threshold Voltage. 2.5 V V DS = V GS, I D = μ ΔV GS(th) Gate Threshold Voltage Coefficient -5.6 mv/ C I DSS Drain-to-Source Leakage Current 2 V DS = 4V, V GS = V μ 25 V DS = 4V, V GS = V, T J = 25 C I GSS Gate-to-Source Forward Leakage V GS = 6V n Gate-to-Source Reverse Leakage - V GS = -6V gfs Forward Transconductance 2 S V DS = V, I D = 5 Q g Total Gate Charge 39 58 Q gs Pre-Vth Gate-to-Source Charge 9. V DS = 2V Q gs2 Post-Vth Gate-to-Source Charge 4.5 V GS = 4.5V nc Q gd Gate-to-Drain Charge 6 I D = 5 Q godr Gate Charge Overdrive 9.5 Q sw Switch Charge (Q gs2 Q gd ) 2.5 Q oss Output Charge 23 nc V DS = 6V, V GS = V R G Gate Resistance.6 Ω t d(on) Turn-On Delay Time 2 V DD = 2V, V GS = V t r Rise Time 75 I D = 5 ns t d(off) Turn-Off Delay Time 8 R G =.7Ω t f Fall Time 3 C iss Input Capacitance 372 V GS = V C oss Output Capacitance 6 pf V DS = 25V C rss Reverse Transfer Capacitance 35 valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy d 25 mj I R valanche Current c 5 Diode Characteristics Conditions V GS = V, I D = 25u ƒ =.MHz Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 5i (Body Diode) showing the G I SM Pulsed Source Current integral reverse 64 (Body Diode)c p-n junction diode. V SD Diode Forward Voltage.3 V T J = 25 C, I S = 5, V GS = V e t rr Reverse Recovery Time 25 38 ns T J = 25 C, I F = 5, V DD = 2V Q rr Reverse Recovery Charge 74 nc di/dt = 4/μs e t on Forward Turn-On Time Time is dominated by parasitic Inductance D S Thermal Resistance Parameter Typ. Max. Units R θjc (Bottom) Junction-to-Case f.2 R θjc (Top) Junction-to-Case f 3 C/W R θj Junction-to-mbient g 35 R θj (<s) Junction-to-mbient g 22 2 www.irf.com
C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current () R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current () I D, Drain-to-Source Current () IRLH734PbF VGS TOP 5.V.V 4.5V 4.V 3.3V 3.V 2.9V BOTTOM 2.7V VGS TOP 5.V.V 4.5V 4.V 3.3V 3.V 2.9V BOTTOM 2.7V 2.7V 2.7V 6μs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 6μs PULSE WIDTH Tj = 5 C. V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics V DS = 25V 6μs PULSE WIDTH.8.6 I D = 5 V GS = V.4 T J = 5 C.2 T J = 25 C..8. 2 3 4 V GS, Gate-to-Source Voltage (V).6-6 -4-2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss Fig 4. Normalized On-Resistance vs. Temperature 4 I D = 5 V DS = 32V 2 V DS = 2V VDS= 8.V 8 6 C oss 4 C rss 2 V DS, Drain-to-Source Voltage (V) 2 4 6 8 Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com 3
V GS(th), I D, Drain Current () Gate threshold Voltage (V) I SD, Reverse Drain Current () I D, Drain-to-Source Current () IRLH734PbF OPERTION IN THIS RE LIMITED BY R DS (on) T J = 5 C msec μsec T J = 25 C Limited by Package DC V GS = V..2.4.6.8..2.4.6 V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Tc = 25 C Tj = 5 C Single Pulse msec.. V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating rea 4 2.8 2 Limited By Package 2.6 2.4 2.2 8 2. 6 4 2.8.6.4.2 I D = μ I D = 25μ I D =.m I D =. 25 5 75 25 5 T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature..8-75 -5-25 25 5 75 25 5 T J, Temperature ( C ) Fig. Threshold Voltage vs. Temperature D =.5 Thermal Response ( Z thjc )....2..5.2. SINGLE PULSE ( THERML RESPONSE ) E-6 E-5.... t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com
R DS(on), Drain-to -Source On Resistance (mω) E S, Single Pulse valanche Energy (mj) IRLH734PbF 2 5 8 I D = 5 4 3 I D TOP 9.5 2 BOTTOM 5 6 4 T J = 25 C 2 2 T J = 25 C 2 4 6 8 2 V GS, Gate -to -Source Voltage (V) 25 5 75 25 5 Starting T J, Junction Temperature ( C) Fig 2. On-Resistance vs. Gate Voltage Fig 3. Maximum valanche Energy vs. Drain Current V (BR)DSS 5V tp V DS L DRIVER R G 2V tp D.U.T IS.Ω - V DD I S Fig 4a. Unclamped Inductive Test Circuit Fig 4b. Unclamped Inductive Waveforms R G V GS V DS R D D.U.T. - V DD V DS 9% VV GS Pulse Width µs Duty Factor. % V GS t d(on) t r t d(off) t f Fig 5a. Switching Time Test Circuit Fig 5b. Switching Time Waveforms www.irf.com 5
IRLH734PbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-pplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 6. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Vds Id Vgs K DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 7. Gate Charge Test Circuit Fig 8. Gate Charge Waveform 6 www.irf.com
IRLH734PbF PQFN 5x6 Outline "E" Package Details For footprint and stencil design recommendations, please refer to application note N-54 at http://www.irf.com/technical-info/appnotes/an-54.pdf PQFN 5x6 Outline "E" Part Marking INTERNTIONL RECTIFIER LOGO DTE CODE SSEMBLY SITE CODE (Per SCOP 2-2) PIN IDENTIFIER XXXX XYWWX XXXXX PRT NUMBER ( 4 or 5 digits ) MRKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of ETI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7
IRLH734PbF PQFN 5x6 Outline "E" Tape and Reel NOTE: Controlling dimensions in mm Std reel quantity is 4 parts. CODE B C D E F G REEL DIMENSIONS STNDRD OPTION (QTY 4) TR OPTION (QTY 4) METRIC IMPERIL METRIC IMPERIL MIN 329.5 2.9 2.8.7 97 Ref 3 MX 33.5 2.5 3.5 2.3 99 7.4 4.5 MIN 2.972.823.54.67 3.89.52 MX 3..846.532.9 3.898.57 MIN 77.5 2.9 3.2.9 65 Ref 3 MX 78.5 2.5 3.8 2.3 66 2 4.5 MIN 6.988.823.52.75 2.35.52 MX 7.28.846.543.9 2.598.57 8 www.irf.com
IRLH734PbF Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Industrial (per JEDEC JES D47F guidelines ) MS L PQFN 5mm x 6mm (per JE DEC J-S T D-2D ) Yes Qualification standards can be found at International Rectifier s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ pplicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.99mH, R G = 5Ω, I S = 5. ƒ Pulse width 4μs; duty cycle 2%. R θ is measured at T J of approximately 9 C. When mounted on inch square 2 oz copper pad on.5x.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 5 by die-source to lead-frame bonding technology Data and specifications subject to change without notice. IR WORLD HEDQURTERS: N. Sepulveda Blvd., El Segundo, California 9245, US Tel: (3) 252-75 TC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. 4/22 www.irf.com 9