NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for Coil on Plug and Driver on Coil Applications Gate Emitter ESD Protection Temperature Compensated Gate Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Minimum Avalanche Energy 5 mj Gate Resistor (R G ) = 7 This is a Pb Free Device Applications Ignition Systems MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Collector Emitter Voltage V CES 365 V Gate Emitter Voltage V GE 5 V Collector Current Continuous @ T C = 25 C Pulsed I C 2 5 A DC A AC Continuous Gate Current I G. ma Transient Gate Current (t 2 ms, f Hz) I G 2 ma ESD (Charged Device Model) ESD 2. kv ESD (Human Body Model) R = 5, C = pf ESD ESD (Machine Model) R =, C = 2 pf ESD 5 V Total Power Dissipation @ T C = 25 C Derate above 25 C (Note ) 8. P D 65. Operating & Storage Temperature Range T J, T stg 55 to +75 kv W W/ C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Assuming infinite heatsink Case to Ambient C 2 AMPS, 365 VOLTS V CE(on) =.75 V Typ @ I C = A, V GE 4.5 V G R G R GE ORDERING INFORMATION Device Package Shipping NGB827ANT4G D 2 PAK (Pb Free) C E D 2 PAK CASE 48B STYLE 4 MARKING DIAGRAM Gate 4 Collector NGB 827AxG AYWW 2 Collector 3 Emitter NGB827Ax = Device Code x = N or B A = Assembly Location Y = Year WW = Work Week G = Pb Free Package NGB827ABNT4G D 2 PAK (Pb Free) 8 / Tape & Reel 8 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Semiconductor Components Industries, LLC, 2 December, 2 Rev. Publication Order Number: NGB827AN/D
NGB827AN, NGB827ABN UNCLAMPED COLLECTOR TO EMITTER AVALANCHE CHARACTERISTICS ( 4 T J 5 C) Characteristic Symbol Value Unit Single Pulse Collector to Emitter Avalanche Energy V CC = 5 V, V GE = V, Pk I L = 6.5 A, L = 3.7 mh, R g = k Starting T J = 25 C V CC = 5 V, V GE = V, Pk I L = A, L = 6. mh, R g = k Starting T J = 25 C Reverse Avalanche Energy V CC = V, V GE = 2 V, Pk I L = 25.8 A, L = 6. mh, Starting T J = 25 C THERMAL CHARACTERISTICS E AS 5 36 E AS(R) 2 mj mj Thermal Resistance, Junction to Case R JC.9 C/W Thermal Resistance, Junction to Ambient (Note 2) R JA 5 C/W Maximum Temperature for Soldering Purposes,.25 in from case for 5 seconds (Note 3) T L 275 C 2. When surface mounted to an FR4 board using the minimum recommended pad size. 3. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Clamp Voltage BV CES I C = 2. ma T J = 4 C to 5 C 325 35 375 V I C = ma T J = 4 C to 5 C 34 365 39 Zero Gate Voltage Collector Current I CES V CE = 24 V V GE = V T J = 25 C. 2. A Reverse Collector Emitter Clamp Voltage Reverse Collector Emitter Leakage Current B VCES(R) I CES(R) V CE = 25 V V GE = V I C = 75 ma V CE = 24 V T J = 25 C. 5 T J = 5 C 25 T J = 4 C.25 2.5 T J = 25 C 25 27 29 V T J = 5 C 25 29 3 T J = 4 C 24 26 29 T J = 25 C.5. ma T J = 5 C 2 25 4 T J = 4 C.3. Gate Emitter Clamp Voltage BV GES I G = 5. ma T J = 4 C to 5 C 2 3 4.5 V Gate Emitter Leakage Current I GES V GE = V T J = 4 C to 5 C 5 7 A Gate Resistor R G T J = 4 C to 5 C 7 Gate Emitter Resistor R GE T J = 4 C to 5 C 4.25 6 25 k ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V GE(th) I C =. ma V GE = V CE T J = 25 C.2.5 2. V T J = 5 C.7..3 T J = 4 C.4.7 2. Threshold Temperature Coefficient (Negative) 4. mv/ C Collector to Emitter On Voltage V CE(on) I C = 6. A *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width 3 S, Duty Cycle 2%. I C = ma V GE = 4.5 V T J = 25 C.5.5.75 V T J = 5 C.2.4.75 T J = 4 C.2.6.75 T J = 25 C.62. 2
NGB827AN, NGB827ABN ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions ON CHARACTERISTICS (Note 4) Collector to Emitter On Voltage V CE(on) I C = 8. A I C = A V GE = 3.7 V I C = A I C = A V GE = 4.5 V Forward Transconductance gfs I C = 6. A V CE = 5. V Temperature Min Typ Max Unit T J = 25 C.2.65 2. V T J = 5 C.4.6 2. T J = 4 C.4.7 2. T J = 25 C.35.8 2.2 T J = 5 C.5.9 2.2 T J = 4 C.5.85 2.2 T J = 25 C.35.8 2. T J = 5 C.5.8 2. T J = 4 C.5.8 2. T J = 25 C.35.75 2.5 T J = 5 C.4.75 2. T J = 4 C.4.8 2. T J = 25 C 5.8 Mhos DYNAMIC CHARACTERISTICS Input Capacitance C ISS 75 8 9 pf Output Capacitance C f = khz OSS T V CE = 25 V J = 25 C 75 9 5 Transfer Capacitance C RSS 4 7 2 SWITCHING CHARACTERISTICS Turn On Delay Time (Resistive) Rise Time (Resistive) t d(on) V CE = 4 V T J = 25 C.5.55.7 Sec R L =. t r V GE = 5. V R G = T J = 25 C 2. 2.32 2.7 Turn Off Delay Time (Resistive) Fall Time (Resistive) Turn On Delay Time (Resistive) Rise Time (Resistive) Turn Off Delay Time (Resistive) Fall Time (Resistive) t d(off) V CE = 4 V T J = 25 C 2. 2.5 3. R L =. t f V GE = 5. V R G = T J = 25 C 8. 3 t d(on) V CE = 3 V T J = 25 C.5.65.75 R L = 46 t r V GE = 5. V R G = T J = 25 C.7.8 2. t d(off) V CE = 3 V T J = 25 C 4. 4.7 6. R L = 46 t f V GE = 5. V R G = T J = 25 C 6. 5 *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width 3 S, Duty Cycle 2%. 3
NGB827AN, NGB827ABN TYPICAL ELECTRICAL CHARACTERISTICS 35 35 3 3 25 25 I SCIS (A) 2 5 5 25 C 5 C I SCIS (A) 2 5 5 5 C 25 C V CE(on), COLLECTOR TO EMITTER VOLTAGE (V) 2.75 2.25.75.25 2 3 4 5 6 7 8 9 L (mh) 2.5 2..5 Figure. Typical Self Clamped Inductive Switching Performance (SCIS) T J = 4 C T J = 25 C. T J = 75 C.75 2 4 6 8 2 4 I C, COLLECTOR CURRENT (A) 6 V CE(on), COLLECTOR TO EMITTER VOLTAGE (V) 2.75 2.5 2.25 2..75.5 2 3 4 5 6 7 8 92 CLAMPING TIME ( S) Figure 2. Typical Self Clamped Inductive Switching Performance (SCIS) I C = 2 A I C = 6 A I C = A I C = 8. A I C = 6. A.25 8 2 4 2 2 4 6 8 2 4 6 8 T J, JUNCTION TEMPERATURE ( C) Figure 3. Collector to Emitter Voltage vs. Collector Current Figure 4. Collector to Emitter Voltage vs. Junction Temperature I C, COLLECTOR CURRENT (A) 6 5 4 3 2 V GE = 6. V 5. V V GE = 4.5 V V GE = 3.5 V V GE = 3. V V GE = 2.5 V 2 3 4 5 6 7 8 9 V CE, COLLECTOR TO EMITTER VOLTAGE (V) I C, COLLECTOR CURRENT (A) 6 5 4 3 2 V GE = 6. V 5. V 4.5 V V GE = 3.5 V V GE = 3. V V GE = 2.5 V 2 3 4 5 6 7 8 9 V CE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. On Region Characteristics @ T J = 25 C Figure 6. On Region Characteristics @ T J = 4 C 4
NGB827AN, NGB827ABN TYPICAL ELECTRICAL CHARACTERISTICS I C, COLLECTOR CURRENT (A) 6 5 4 3 2 6. V 5. V 4.5 V 4. V 3.5 V 3. V V GE = 2.5 V 2 3 4 5 6 7 8 9 V CE, COLLECTOR TO EMITTER VOLTAGE (V) I C, COLLECTOR CURRENT (A) 6 5 4 3 2. V CE 5. V T J = 4 C T J = 25 C T J = 75 C.5 2. 2.5 3. 3.5 4. 4.5 5. V GE, GATE TO EMITTER VOLTAGE (V) Figure 7. On Region Characteristics @ T J = 75 C Figure 8. Transfer Characteristics LEAKAGE CURRENT ( A), V CE = 24 V V CE = 32 V V CE = 25 V. 4 2 2 4 6 8 2 4 6 8 V GE(th), GATE THRESHOLD VOLTAGE (V) 2. I C = ma, V CE = V GE.75.5.25..75.5 4 2 2 4 6 8 2 4 6 8 T J, JUNCTION TEMPERATURE ( C) T J, JUNCTION TEMPERATURE ( C), C, CAPACITANCE (pf) Figure 9. Collector to Emitter Leakage Current vs. Junction Temperature C iss C oss C rss 2 4 6 8 2 4 6 8 2 COLLECTOR TO EMITTER VOLTAGE (V) Figure. Capacitance Variation T J = 25 C V GE = V t, TIME ( s). 4 Figure. Gate Threshold Voltage vs. Temperature t f V CC = 4 V V GE = 5. V R L =. R G = k t r t d(off) t d(on) 5 35 6 85 35 6 85 TEMPERATURE ( C) Figure 2. Resistive Switching Time Variation vs. Temperature 5
I C, COLLECTOR CURRENT (A). NGB827AN, NGB827ABN TYPICAL ELECTRICAL CHARACTERISTICS Single Pulse T C = 25 C V CE(on) LIMIT THERMAL LIMIT PACKAGE LIMIT Mounted on 2 sq. FR4 board ( sq. 2 oz. Cu.6 thick single sided) V CE, COLLECTOR EMITTER VOLTAGE (V) s s ms ms Figure 3. Forward Biased Safe Operating Area dc R JC(t), TRANSIENT THERMAL RESISTANCE ( C/W). Duty Cycle =.5.2..5.2. Single Pulse DUTY CYCLE, D = t /t 2....... t,time (S) P (pk) t t 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T A = P (pk) R JC (t) Figure 4. Best Case Transient Thermal Resistance (Non normalized Junction to Case Mounted on Cold Plate) 6
NGB827AN, NGB827ABN PACKAGE DIMENSIONS D 2 PAK 3 CASE 48B 4 ISSUE J T SEATING PLANE B 4 2 3 G S D 3 PL.3 (.5) M T B M K C H A E V W J W NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. 48B THRU 48B 3 OBSOLETE, NEW STANDARD 48B 4. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.34.38 8.64 9.65 B.38.45 9.65.29 C.6.9 4.6 4.83 D.2.35.5.89 E.45.55.4.4 F.3.35 7.87 8.89 G. BSC 2.54 BSC H.8. 2.3 2.79 J.8.25.46.64 K.9. 2.29 2.79 L.52.72.32.83 M.28.32 7. 8.3 N.97 REF 5. REF P.79 REF 2. REF R.39 REF.99 REF S.575.625 4.6 5.88 V.45.55.4.4 U P L SOLDERING FOOTPRINT* STYLE 4: PIN. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR M 8.38.33 F VIEW W W.66.42.6.4 5.8.2 7.2.67 3.5.2 SCALE 3: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: 33 675 275 or 8 344 386 Toll Free USA/Canada Fax: 33 675 276 or 8 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 8 3 587 5 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGB827AN/D