P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.9A, R DS(ON) =43mΩ (Max.) @ V GS =-4.5V R DS(ON) =58mΩ (Max.) @ V GS =-2.5V R DS(ON) =88mΩ (Max.) @ V GS =-1.8V 1% UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D S G Top View of SOT-23 D Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S P-Channel MOSFET Ordering and Marking Information SM235PS Assembly Material Handling Code Temperature Range Package Code Package Code A : SOT-23 Operating Junction Temperature Range C : -55 to 15 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM235PS A : B5XX XX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 1% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
Absolute Maximum Ratings (T A = 25 C unless otherwise noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage -2 V GSS Gate-Source Voltage ±12 V I D * Continuous Drain Current T A =25 C -4.9 T A =7 C -3.9 A I DM * Pulsed Drain Current T A =25 C -19.7 T A =7 C -15.7 I S * Diode Continuous Forward Current -2 A T J Maximum Junction Temperature 15 T STG Storage Temperature Range -55 to 15 C P D * Maximum Power Dissipation T A =25 C 1.6 T A =7 C 1. W R θja * Thermal Resistance-Junction to Ambient t 1s 8 Steady state 1 C/W R θjl Thermal Resistance-Junction to Lead Steady state 52 Note : *Surface Mounted on 1in 2 pad area, t 1sec. Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit STATIC CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =-25µA -2 - - V I DSS V DS =-16V, V GS =V - - -1 Zero Gate Voltage Drain Current µa T J =85 C - - -3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-25µA -.5 -.7-1 V I GSS Gate Leakage Current V GS =±12V, V DS =V - - ±1 na V GS =-4.5V, I DS =-4.9A - 33 43 a R DS(ON) a V SD Drain-Source On-State Resistance V GS =-2.5V, I DS =-3.1A - 42 58 mω V GS =-1.8V, I DS =-2A - 6 88 Diode Forward Voltage I SD =-1A, V GS =V - -.7-1 V GATE CHARGE CHARACTERISTICS b Q g Total Gate Charge - 8 11 Q gs Gate-Source Charge V DS =-1V, V GS =-4.5V, I DS =-4.9A - 1.6 - nc Q gd Gate-Drain Charge - 1.9-2
Electrical Characteristics (Cont.) (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit DYNAMIC CHARACTERISTICS b R G Gate Resistance V GS =V,V DS =V,F=1MHz - 2.4 5 Ω C iss Input Capacitance V GS =V, - 815 16 C oss Output Capacitance V DS =-1V, - 145 - C rss Reverse Transfer Capacitance Frequency=1.MHz - 11 - t d(on) Turn-on Delay Time - 8 14.4 t r Turn-on Rise Time V DD =-1V, R L =1Ω, - 12.8 23 I DS =-1A, V GEN =-4.5V, t d(off) Turn-off Delay Time R G =6Ω - 33 59.4 t f Turn-off Fall Time - 18 32.4 t rr Reverse Recovery Time - 16 - ns I SD =-4.9A, dl SD /dt =1A/µs Qrr Reverse Recovery Charge - 8 - nc Note a : Pulse test ; pulse width 3µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. pf ns 3
Typical Operating Characteristics Power Dissipation Drain Current 1.8 6 1.5 5 Ptot - Power (W) 1.2.9.6 -ID - Drain Current (A) 4 3 2.3 1 T A =25 o C. 2 4 6 8 1 12 14 16 T A =25 o C,V G =-4.5V 2 4 6 8 1 12 14 16 Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A) 5 1 1.1 Rds(on) Limit 3µs 1ms 1ms 1ms 1s DC T A =25 o C.1.1.1 1 1 1 Normalized Transient Thermal Resistance 2 1.1.1.1.2.5 Single Pulse.1.2 Duty =.5 Mounted on 1in 2 pad R θja : 8 o C/W 1E-3 1E-4 1E-3.1.1 1 1 3 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 2 V GS =-3,-4,-5,-6,-7,-8,-9,-1V 1 -ID - Drain Current (A) 16 12 8 4-2V -1.8V -1.5V RDS(ON) - On - Resistance (mω) 8 6 4 2 V GS =-1.8V V GS =-2.5V V GS =-4.5V..5 1. 1.5 2. 2.5 3. -VDS - Drain - Source Voltage (V) 4 8 12 16 2 -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 7 I DS =-4.9A 1.6 I DS = -25µA RDS(ON) - On - Resistance (mω) 6 5 4 3 Normalized Threshold Voltage 1.4 1.2 1..8.6.4 2 1 2 3 4 5 6 7 8 9 1.2-5 -25 25 5 75 1 125 15 -VGS - Gate - Source Voltage (V) Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance 1.6 1.4 1.2 1..8.6 V GS = -4.5V I DS = -4.9A -IS - Source Current (A) 2 1 1 T j =15 o C T j =25 o C R ON @T j =25 o C: 33mΩ.4-5 -25 25 5 75 1 125 15 Tj - Junction Temperature ( C).1..2.4.6.8 1. 1.2 1.4 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 135 12 Frequency=1MHz 1 9 V DS = -1V I DS = -4.9A C - Capacitance (pf) 15 9 75 6 45 3 15 Crss Coss Ciss -VGS - Gate-source Voltage (V) 8 7 6 5 4 3 2 1 4 8 12 16 2 -VDS - Drain - Source Voltage (V) 3 6 9 12 15 18 QG - Gate Charge (nc) 6
Avalanche Test Circuit and Waveforms VDS L tav DUT EAS RG VDD VDD tp IAS IL.1W tp VDSX(SUS) VDS Switching Time Test Circuit and Waveforms VDS RG VGS DUT RD VDD VGS 1% td(on) tr td(off) tf tp 9% VDS 7
Disclaimer Sinopower Semiconductor, Inc. (hereinafter Sinopower ) has been making great efforts to development high quality and better performance products to satisfy all customers needs. However, a product may fail to meet customer s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 8
Package Information D e -T- SEATING PLANE < 4 mils SEE VIEW A A2 A.25 E1 E b c e1 A1 L GAUGE PLANE SEATING PLANE VIEW A S Y M B O L A A1 A2 b c D E E1 e e1 L.3 MIN. -..9.3.8 2.6 1.4 MILLIMETERS.95 BSC 1.9 BSC MAX. 1.2.8 1.12.5.22 3. 1.8 SOT-23 MIN...35.12.3.6.12 INCHES.37 BSC.75 BSC MAX..47.3.44.2.9 2.7 3.1.16.122.12.55.118.71.24 8 8 Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 1 mil per side. - RECOMMENDED LAND PATTERN.8 2.4.8.95 UNIT: mm 9
Carrier Tape & Reel Dimensions OD P P2 P1 A W F E1 K B A OD1 B A T B SECTION A-A SECTION B-B d H A T1 Application A H T1 C d D W E1 F SOT-23 178.±2. 5 MIN. 8.4+2. -. 13.+.5 -.2 1.5 MIN. 2.2 MIN. 8.±.3 1.75±.1 3.5±.5 P P1 P2 D D1 T A B K 4.±.1 4.±.1 2.±.5 1.5+.1 -. 1. MIN..6+. -.4 3.2±.2 3.1±.2 1.5±.2 (mm) 1
Taping Direction Information SOT-23 USER DIRECTION OF FEED Classification Profile 11
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) 1 C 15 C 6-12 seconds 15 C 2 C 6-12 seconds Average ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) 183 C 6-15 seconds 217 C 6-15 seconds See Classification Temp in table 1 See Classification Temp in table 2 2** seconds 3** seconds Average ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <1.6 mm 26 C 26 C 26 C 1.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B12 5 Sec, 245 C HTRB JESD-22, A18 1 Hrs, 8% of VDS max @ Tjmax HTGB JESD-22, A18 1 Hrs, 1% of VGS max @ Tjmax PCT JESD-22, A12 168 Hrs, 1%RH, 2atm, 121 C TCT JESD-22, A14 5 Cycles, -65 C~15 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: 886-3-5635818 Fax: 886-3-56358 12