Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE GRADE V DSS AUIRFR45Z AUIRFU45Z 55V R DS(on) max. 24.5m I D HEXFET Power MOSFET 3A Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D G S D-Pak AUIRFR45Z D S D G I-Pak AUIRFU45Z G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFU45Z I-Pak Tube 75 AUIRFU45Z Tube 75 AUIRFR45Z AUIRFR45Z D-Pak Tape and Reel Left 3 AUIRFR45ZTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25 C, unless Symbol Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V (Silicon Limited) 3 I D @ T C = C Continuous Drain Current, V GS @ V (Silicon Limited) 21 A I DM Pulsed Drain Current 12 P D @T C = 25 C Maximum Power Dissipation 48 W Linear Derating Factor.32 W/ C V GS Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Energy (Thermally Limited) 29 E AS (Tested) Single Pulse Avalanche Energy Tested Value 46 mj I AR Avalanche Current See Fig.15,16, 12a, 12b A E AR Repetitive Avalanche Energy mj T J Operating Junction and -55 to + 175 T STG Storage Temperature Range C Soldering Temperature, for seconds (1.6mm from case) 3 Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 3.12 R JA Junction-to-Ambient ( PCB Mount) 5 C/W R JA Junction-to-Ambient 1 HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 215-12-1
Static @ T J = 25 C (unless otherwise specified) AUIRFR/U45Z Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = V, I D = 25µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient.53 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 19 24.5 m V GS = V, I D = 18A V GS(th) Gate Threshold Voltage 2. 4. V V DS = V GS, I D = 25µA gfs Forward Trans conductance 16 S V DS = 15V, I D = 18A I DSS Drain-to-Source Leakage Current 2 V µa DS = 55V, V GS = V 25 V DS = 55V,V GS = V,T J =125 C Gate-to-Source Forward Leakage 2 V I GSS na GS = 2V Gate-to-Source Reverse Leakage -2 V GS = -2V Dynamic Electrical Characteristics @ T J = 25 C (unless otherwise specified) Q g Total Gate Charge 18 27 I D = 18A Q gs Gate-to-Source Charge 5.3 nc V DS = 44V Q gd Gate-to-Drain Charge 7. V GS = V t d(on) Turn-On Delay Time V DD = 28V t r Rise Time 4 I D = 18A ns t d(off) Turn-Off Delay Time 26 R G = 24.5 t f Fall Time 24 V GS = V Between lead, L D Internal Drain Inductance 4.5 6mm (.25in.) nh from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 74 V GS = V C oss Output Capacitance 14 V DS = 25V C rss Reverse Transfer Capacitance 74 ƒ = 1.MHz pf C oss Output Capacitance 45 V GS = V, V DS = 1.V ƒ = 1.MHz C oss Output Capacitance 1 V GS = V, V DS = 44V ƒ = 1.MHz C oss eff. Effective Output Capacitance 18 V GS = V, V DS = V to 44V Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 3 (Body Diode) showing the A Pulsed Source Current integral reverse I SM 12 (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.3 V T J = 25 C,I S = 18A, V GS = V t rr Reverse Recovery Time 19 29 ns T J = 25 C,I F = 18A, V DD = 28V Q rr Reverse Recovery Charge 14 21 nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by T Jmax, starting T J = 25 C, L =.18mH, R G = 25, I AS = 18A, V GS =V. Part not recommended for use above this value. Pulse width 1.ms; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS Limited by T Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting T J = 25 C, L =.18mH, R G = 25, I AS = 18A, V GS =V. When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at T J approximately 9 C. 2 215-12-1
I D, Drain-to-Source Current ) I D, Drain-to-Source Current (A) Gfs, Forward Transconductance (S) I D, Drain-to-Source Current (A) AUIRFR/U45Z VGS TOP 15V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 15V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 1.1 4.5V 6µs PULSE WIDTH Tj = 25 C.1 1 V DS, Drain-to-Source Voltage (V) 4.5V 6µs PULSE WIDTH Tj = 175 C 1.1 1 V DS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics 3 T J = 175 C 25 T J = 175 C 2 15 T J = 25 C T J = 25 C 1 V DS = 25V 6µs PULSE WIDTH 4 5 6 7 8 9 V GS, Gate-to-Source Voltage (V) 5 V DS = 8.V 38µs PULSE WIDTH 2 3 4 I D, Drain-to-Source Current (A) Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Forward Trans conductance Vs. Drain Current 3 215-12-1
C, Capacitance (pf) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) AUIRFR/U45Z 12 8 V GS = V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Ciss 2 16 12 I D = 18A V DS = 44V VDS= 28V VDS= 11V 6 8 4 2 Coss Crss 1 4 FOR TEST CIRCUIT SEE FIGURE 13 5 15 2 25 3 V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage. OPERATION IN THIS AREA LIMITED BY R DS (on). T J = 175 C. µsec T 1. J = 25 C V GS = V.1..5 1. 1.5 2. V SD, Source-toDrain Voltage (V) 1.1 Tc = 25 C Tj = 175 C Single Pulse 1msec msec 1 V DS, Drain-toSource Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 215-12-1
I D, Drain Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) AUIRFR/U45Z 3 25 2 2.5 2. I D = 18A V GS = V 15 1.5 5 1. 25 5 75 125 15 175 T J, Junction Temperature ( C).5-6 -4-2 2 4 6 8 12 14 16 18 T J, Junction Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig. Normalized On-Resistance Vs. Temperature Thermal Response ( Z thjc ) 1.1.1.1 D =.5.2..5.2.1 R 1 R 1 R 2 R 2 R 3 R 3 J J 1 1 2 2 3 3 Ci= i Ri Ci= i Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-6 1E-5.1.1.1 t 1, Rectangular Pulse Duration (sec) C C Ri ( C/W) i (sec) 1..174 1.61.552.418.7193 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 215-12-1
V GS(th) Gate threshold Voltage (V) AUIRFR/U45Z 15V V DS R G 2V tp L D.U.T I AS.1 DRIVER + - V DD A E AS, Single Pulse Avalanche Energy (mj) 12 8 6 I D TOP 2.A 3.5A BOTTOM 18A Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS 4 2 25 5 75 125 15 175 Starting T J, Junction Temperature ( C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms 4.5 Vds Vgs Id 4. 3.5 Vgs(th) I D = 25µA 3. Qgs1 Qgs2 Qgd Qgodr 2.5 Fig 13a. Gate Charge Waveform 2. -75-5 -25 25 5 75 125 15 175 T J, Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit 6 215-12-1
E AR, Avalanche Energy (mj) AUIRFR/U45Z Duty Cycle = Single Pulse Avalanche Current (A).1.5. Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 1.1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 tav (sec) Fig 15. Typical Avalanche Current Vs. Pulse width Notes on Repetitive Avalanche Curves, Figures 15, 16: 3 25 2 15 5 TOP Single Pulse BOTTOM 1% Duty Cycle I D = 18A 25 5 75 125 15 175 Starting T J, Junction Temperature ( C) (For further info, see AN-5 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25 C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) P D (ave) = 1/2 ( 1.3 BV I av ) = T/ Z thjc I av = 2 T/ [1.3 BV Z th ] Fig 16. Maximum Avalanche Energy Vs. Temperature E AS (AR) = P D (ave) t av 7 215-12-1
AUIRFR/U45Z Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 215-12-1
AUIRFR/U45Z D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number IR Logo AUFR45Z YWWA XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 215-12-1
AUIRFR/U45Z I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information Part Number IR Logo AUFU45Z YWWA XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 215-12-1
AUIRFR/U45Z D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO EIA-481. 16 mm Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 215-12-1
AUIRFR/U45Z Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Automotive (per AEC-Q1) Comments: This part number(s) passed Automotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 I-Pak Class M2 (+/-2V) AEC-Q1-2 Class H1A (+/-5V) AEC-Q1-1 Class C5 (+/-1125V) AEC-Q1-5 Yes Highest passing voltage. Revision History Date Updated datasheet with corporate template 12/1/215 Corrected ordering table on page 1. Comments Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 215 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 12 215-12-1