S21965, S21965-A, S21965-C Dual-In-Line Intelligent ower Module R O A D N X K C L DD 17 16 15 14 13 12 11 10 S21965-C 9 8 7 6 5 4 DTAIL "A" 3 2 1 K F V G H J DTAIL "B" S21965 / S21965-A DD R O A D N X K C L M SID DD S21965-C DTAIL "B" GG R U 17 18 16 19 15 14 20 13 S 12 11 10 SID 9 DTAIL "A" 21 8 7 S21965 S21965-A 22 Z 6 23 Outline Drawing and Circuit Diagram 5 Dimensions Inches Millimeters A 1.50±0.02 38.0±0.5 B 0.94±0.02 24.0±0.5 C 0.14 3.5 D 1.40 35.56 0.57±0.02 14.4±0.5 F 0.74±0.02 18.9±0.5 G 1.15±0.02 29.2±0.5 H 0.14 3.5 J 0.13 3.3 K 0.016 0.4 L 0.06±0.02 1.5±0.05 M 0.031 0.8 N 1.39±0.019 35.0±0.3 O 0.07±0.008 1.778±0.2 0.02 0.5 Q 0.47 12.0 4 24 3 T 2 1 25 CC FF Q B G H M AA BB (S21965-A) (S21965 / S21965-C) 1 (VNC) 6 V 2 VUFB 7 3 VVFB 8 V1 4 VFB 9 VNC 5 U 10 UN 11 VN 12 N 13 VN1 14 FO 15 CIN J DTAIL "B" SID TRMINAL COD 16 VNC 17 VNO 18 NC 19 NC 20 N 21 22 V 23 U 24 25 NC Dimensions Inches Millimeters R 0.011 0.28 S 0.12 3.08 T 0.024 0.6 U 0.1±0.008 2.54±0.2 V 1.33±0.02 33.7±0.5 0.03 0.678 X 0.04 1.0 0.05 1.2 Z 1.40 35.56 AA 0.55±0.02 14.0±0.5 BB 0.37±0.02 9.5±0.5 CC 0.22±0.02 5.5±0.5 DD 0 ~ 5 0 ~ 5 0.06 MIN. 1.5 Min. FF 0.05 1.2 GG 0.063 Rad. 1.6 Rad. DTAIL "A" S21965-C S21965 / S21965-A Description: DI-IMs are intelligent power modules that integrate power devices, drivers, and protection circuitry in an ultra compact dual-in-line transfer-mold package for use in driving small three phase motors. Use of 5th generation IGBTs, DI packaging, and application specific HVICs allow the designer to reduce inverter size and overall design time. Features: Compact ackages Single ower Supply Integrated HVICs Direct Connection to CU Reduced R th Applications: Refrigerators Air Conditioners Small Servo Motors Small Motor Control Ordering Information: S21965 is a 600V, 20 Ampere short pin DI Intelligent ower Module. S21965-A long pin type S21965-C zigzag pin type 1
Absolute Maximum Ratings, T j = 25 C unless otherwise specified S21965, S21965-A Characteristics Symbol S21965-C Units ower Device Junction Temperature* T j -20 to 150 C Storage Temperature T stg -40 to 125 C Case Operating Temperature (Note 1) T C -20 to 100 C Mounting Torque, M3 Mounting Screws 6.9 in-lb Module eight (Typical) 10 Grams Heatsink Flatness (Note 2) -50 to 100 µm Self-protection Supply Voltage Limit (Short Circuit rotection Capability)** V CC(prot.) 400 Volts Isolation Voltage, AC 1 minute, 60Hz Sinusoidal, Connection ins to Heatsink late V ISO 1500 Volts *The ma ximum junction temperature rating of the power chips integrated within the DI-IM is 150 C (@T C 100 C). However, to ensure safe operation of the DI-IM, the average junction temperature should be limited to T j(avg) 125 C (@T C 100 C). **V D = 13.5 ~ 16.5V, Inverter art, T j = 125 C, Non-repetitive, Less than 2µs IGBT Inverter Sector Collector-mitter Voltage V CS 600 Volts ach Collector Current, ± (T C = 25 C) I C 20 Amperes ach eak Collector Current, ± (T C = 25 C, Less than 1ms) I C 40 Amperes Supply Voltage (Applied between - N) V CC 450 Volts Supply Voltage, Surge (Applied between - N) V CC(surge) 500 Volts Collector Dissipation (T C = 25 C, per 1 Chip) C 35.7 atts Control Sector Supply Voltage (Applied between V 1 -V NC, V N1 -V NC ) V D 20 Volts Supply Voltage (Applied between V UFB -U, V VFB -V, V FB -) V DB 20 Volts Input Voltage (Applied between U, V, -V NC, U N, V N, N -V NC ) V IN -0.5 ~ V D +0.5 Volts Fault Output Supply Voltage (Applied between F O -V NC ) V FO -0.5 ~ V D +0.5 Volts Fault Output Current (Sink Current at F O Terminal) I FO 1 ma Current Sensing Input Voltage (Applied between C IN -V NC ) V SC -0.5 ~ V D +0.5 Volts Note 1 T C Measure oint Note 2 Flatness Measurement osition CONTROL TRMINALS DI-IM MASURMNT OINT 11.6mm 3.0mm + 4.6mm IGBT CHI FDi CHI OR TRMINALS T C OINT SID + LAC TO CONTACT A 2
lectrical and Mechanical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector-mitter Saturation Voltage V C(sat) V D = V DB = 15V, I C = 20A, V IN = 5V, T j = 25 C 1.70 2.20 Volts V D = V DB = 15V, I C = 20A, V IN = 5V, T j = 125 C 1.80 2.30 Volts Diode Forward Voltage V C -I C = 20A, V IN = 0V 1.90 2.40 Volts Inductive Load Switching Times t on 0.70 1.30 1.90 µs t rr V CC = 300V, V D = V DB = 15V, 0.30 µs t C(on) I C = 20A, T j = 125 C, 0.50 0.75 µs t off V IN = 0 5V, Inductive Load, 1.60 2.20 µs t C(off) 0.40 0.75 µs Collector Cutoff Current I CS V C = V CS, T j = 25 C 1.0 ma Control Sector V C = V CS, T j = 125 C 10 ma Circuit Current I D V IN = 5V Total of V 1 -V NC, V N1 -V NC 2.80 ma V D = V DB = 15V V UFB -U, V VFB -V, V FB - 0.55 ma V IN = 0V Total of V 1 -V NC, V N1 -V NC 2.80 ma V UFB -U, V VFB -V, V FB - 0.55 ma Fault Output Voltage V FOH V SC = 0V, F O Terminal ull-up to 5V by 10kΩ 4.9 Volts V FOL V SC = 1V, I FO = 1mA 0.95 Volts Input Current I IN V IN = 5V 0.70 1.00 1.50 ma Short Circuit Trip Level* V SC(ref) V D = 15V* 0.43 0.48 0.53 Volts Supply Circuit Under-voltage UV DBt Trip Level, T j 125 C 10.0 12.0 Volts UV DBr Reset Level, T j 125 C 10.5 12.5 Volts UV Dt Trip Level, T j 125 C 10.3 12.5 Volts UV Dr Reset Level, T j 125 C 10.8 13.0 Volts Fault Output ulse idth** t FO 20 µs ON Threshold Voltage V th(on) Applied between 2.1 2.6 Volts OFF Threshold Voltage V th(off) U, V, -V NC, 0.8 1.3 Volts ON/OFF Threshold Hysteresis Voltage V th(hys) U N, V N, N -V NC 0.35 0.65 Volts * Short Circuit protection is functioning only for the low-arms. lease select the value of the external shunt resistor such that the SC trip level is less than 1.7 times the current rating. **Fault signal is asserted only for a UV or SC condition on the low side. On a SC fault the FO duration will be 20µsec. On a UV condition the fault signal will be asserted as long as the UV condition exists or for 20µsec, whichever is longer. 3
Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case R th(j-c)q Inverter IGBT (er 1/6 Module) 2.8 C/att R th(j-c)d Inverter FDi (er 1/6 Module) 3.9 C/att Recommended Conditions for Use Characteristic Symbol Condition Min. Typ. Max. Units Supply Voltage V CC Applied between -N Terminals 0 300 400 Volts Control Supply Voltage V D Applied between V 1 -V NC, V N1 -V NC 13.5 15.0 16.5 Volts V DB Applied between V UFB -U, 13.0 15.0 18.5 Volts V VFB -V, V FB - Control Supply Variation dv D, dv DB -1 1 V/µs Arm Shoot-through Blocking Time t DAD For ach Input Signal, T C 100 C 1.5 µs Output r.m.s. Current* I O f M = 5kHZ V CC = 300V, V D = V DB = 15V, 10.3 A rms I O f M = 15kHZ.F. = 0.8, Sinusoidal M, 6.5 A rms T j 125 C, T C 100 C Allowable Minimum Input IN(on) 0.5 µs ulse idth** IN(off) 0.5 µs V NC Voltage Variation V NC Between V NC -N (Including Surge) -5.0 5.0 Volts *The allowable r.m.s. current also depends on the actual application conditions. **DI-IM might not make response or work properly if the input signal plus width is less than the recommended minimum value. 4
Application Circuit 5
rotection Function Timing Diagrams Short-Circuit rotection (Lower-arms only with the external shunt resistor and RC filter) LOR-ARMS CONTROL INUT A6 A7 ROTCTION CIRCUIT STAT ST INTRNAL IGBT GAT A3 A1 A2 SC A4 OUTUT CURRNT I C A8 SNS VOLTAG OF TH SHUNT RSISTOR FAULT OUTUT F O A5 SC RFRNC VOLTAG CR CIRCUIT TIM CONTAINS DLA (NOT) A1: Normal operation IGBT turn on and conducting current. A2: Short-circuit current detected (SC trigger). A3: IGBT gate hard interrupted. A4: IGBT turn off. A5: F O output with a fixed pulse width of t FO(min) = 20µs. A6: Input L IGBT off. A7: Input H IGBT on is blocked during the F O output period. A8: IGBT stays in off state. Under-Voltage rotection (Lower-side, UV D ) CONTROL INUT ROTCTION CIRCUIT STAT ST UV Dr CONTROL SUL VOLTAG V D B1 UV Dt B3 B6 B2 B4 B7 OUTUT CURRNT I C FAULT OUTUT F O B5 B1: Control supply voltage rise After the voltage level reaches UV Dr, the drive circuit begins to work at the rising edge of the next input signal. B2 : Normal operation IGBT turn on and conducting current. B3: Under-voltage trip (UV Dt ). B4: IGBT turn off regardless of the control input level. B5: F O output during under-voltage period, however, the minimum pulse width is 20µs. B6: Under-voltage reset (UV Dr ). B7: Normal operation IGBT turn on and conducting current. 6
rotection Function Timing Diagrams Under-Voltage rotection (Upper-side, UV DB ) CONTROL INUT ROTCTION CIRCUIT STAT ST CONTROL SUL VOLTAG V DB UV DBr C1 UV Dt C3 C5 C2 C4 C6 OUTUT CURRNT I C FAULT OUTUT F O HIGH LVL (NO FAULT OUTUT) C1: Control supply voltage rises After the voltage level reaches UV DBr, the drive circuit begins to work at the rising edge of the next input signal. C2: Normal operation IGBT turn on and conducting current. C3: Under-voltage trip (UV DBt ). C4: IGBT stays off regardless of the control input level, but there is no F O signal output. C5: Under-voltage reset (UV Dr ). C6: Normal operation IGBT turn on and conducting current. Typical Interface Circuit 5V LIN MCU 10kΩ DI-IM U, V,, U N, V N, N 3.3kΩ (MIN) F O V NC (LOGIC) NOT: RC coupling at each input (parts shown dotted) may change depending on the M control scheme used in the application and the wiring impedance of the printed circuit board. The DI-IM input signal section integrates a 3.3kΩ (min) pull-down resistor. Therefore, when using an external filtering resistor, care must be taken to satisfy the turn-on threshold voltage requirement. iring Method Around Shunt Resistor DI-IM iring inductance should be less than 10nH. (quivalent to the inductance of a copper pattern with length = 17mm, width = 3mm, and thickness = 100um.) V NC V NO N R SHUNT (Chip type resistor is recommended.) This GND wiring from V NC should be as close to the shunt resistors as possible. 7