RGPZBM4FH 43V 2A Ignition IGBT Datasheet BV CES I C 43 3V 2A (Typ.).6V E AS 2mJ Outline TO-22 () (3) (2) Features Inner Circuit ) Low Collector - Emitter Saturation (2) 2) High Self-Clamped Inductive Switching Energy 3) Built in Gate-Emitter Protection Diode 4) Qualified to AEC-Q () () Gate (2) Collector (3) Emitter ) Pb - free Lead Plating ; RoHS Compliant (3) Packaging Specifications Packaging Taping Applications Reel Size (mm) 33 Ignition Coil Driver Circuits Tape Width (mm) 6 Type Solenoid Driver Circuits Basic Ordering Unit (pcs) 2, Packing Code Marking TL RGPZBM4 Absolute Maximum Ratings (at T C = 2 C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter V CES 46 V Emitter-Collector (V GE = V) V EC 2 V Gate - Emitter Collector Current V GE V I C 2 A Avalanche Energy (Single Pulse) T j = 2 C E AS 2 mj T j = C *2 E AS mj Power Dissipation P D 7 W Operating Junction Temperature T j 4 to +7 C Storage Temperature T stg to +7 C /8 2. - Rev.A
RGPZBM4FH Thermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance Junction - Case R θ(j-c) - -.4 C/W Electrical Characteristics (at T j = 2 C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector - Emitter Breakdown BV CES I C = 2mA, V GE = V T j = 2 C T j = 4 to 7 C *2 4 43 46 V 39-46 V Emitter - Collector Breakdown BV EC I C = ma, V GE = V 2 3 - V Gate - Emitter Breakdown BV GES I G = ma, V CE = V 2 - ±7 V V CE = 3V, V GE = V Collector Cut - off Current I CES T j = 2 C - - 7 μa T j = C *2 - - μa Gate - Emitter Leakage Current I GES V GE = V, V CE = V - - μa Gate - Emitter Threshold Collector - Emitter Saturation V GE(th) V CE = V, I C = ma T j = 2 C.3.7 2. V T j = C -.3 - V I C = A, V GE = V T j = 2 C -.6 2. V T j = C -.8 - V 2/8 2. - Rev.A
RGPZBM4FH Electrical Characteristics (at T j = 2 C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector - Emitter Saturation I C = 4A, V GE = 4.V T j = 2 C -.7. T j = C -.3 - V V Collector - Emitter Saturation I C = A, V GE = 4V T j = 2 C -.7 2. V T j = C -.9 - V Input Capacitance C ies V CE = V - - Output Capacitance C oes V GE = V - 7 - pf Reverse Transfer Capacitance C res f = MHz - - Total Gate Charge Q g V CE = V, I C = A, V GE = V - 4 - nc t d(on) Turn - on Delay Time *,*2.9.7. t I C = 8A, V CC = 3V, Rise Time *,*2 r V GE = V, R G = Ω,..8. Turn - off Delay Time *,*2 t d(off) L=mH, T j =2 C.8.3 4. Fall Time *,*2 t f.4 2.4 6. t d(on) Turn - on Delay Time * -.6 - Rise Time * t r I C = 8A, V CC = 3V, V GE = V, R G = Ω, -.23 - Turn - off Delay Time * t d(off) L=mH, T j = C -. - Fall Time * t f - 3.9 - μs μs Avalanche Energy (Single Pulse) E AS L = mh, V GE = V, V CC = 3V, R G = kω, T j = 2 C 2 - - mj T j = C *2 - - mj Gate Series Resistance R G 7 3 Ω *) Assurance items according to our measurement definition (Fig.6) *2) Design assurance items 3/8 2. - Rev.A
RGPZBM4FH Electrical Characteristic Curves Fig. Typical Output Characteristics Fig.2 Typical Output Characteristics Collector Current : I C [A] 3 2 2 T j = 2ºC V GE = V V GE = 8V V GE = V V GE = 4.V V GE = 4V V GE = 3.V Collector Current : I C [A] 3 2 2 T j = j 7ºC 2ºC V GE = V V GE = 8V V GE = V V GE = 4.V V GE = 4V V GE = 3.V 2 3 4 2 3 4 Collector To Emitter : V CE [V] Collector To Emitter : V CE [V] Fig.3 Typical Collector To Emitter Saturation vs. Junction Temperature Collector To Emitter Saturation : [V]..4.3.2. I C = A 4.V V 4V V GE = 3.V 8V V 2 7 2 7 2 Collector To Emitter Saturation : [V] Fig.4 Typical Collector To Emitter Saturation vs. Junction Temperature 2.3 2.2 2. 2.9.8.7.6..4.3 I C = A 4.V V 4V 8V V GE = 3.V V 2 7 2 7 2 4/8 2. - Rev.A
RGPZBM4FH Electrical Characteristic Curves Fig. Typical Collector To Emitter Saturation vs. Junction Temperature Collector To Emitter Saturation : [V] 2. 2.. V GE = V I C = A I C = 4.A I C = A 2 7 2 7 2 Collector Current : I C [A] Fig.6 Typical Transfer Characteristics 2 V CE = V T j = 7ºC T j = 2ºC 2 3 4 Gate To Emitter : V GE [V] Fig.7 Typical Gate To Emitter Threshold vs. Junction Temperature Gate To Emitter Threshold : V GE (th) [V] 2. 2.3 2..9.7..3..9.7 V CE = V I C = ma. - -2 2 7 2 7 2 Leakage Current : I CES /I EC [ A] Fig.8 Typical Leakage Current vs. Junction Temperature V EC = 2V V CES = 3V.. - -2 2 7 2 7 2 /8 2. - Rev.A
RGPZBM4FH Electrical Characteristic Curves Collector To Emitter Breakdown : BV CES [V] Fig.9 Typical Collector To Emitter Breakdown vs. Junction Temperature 46 4 44 43 42 4 V GE = V I CES = 2mA 4 - -2 2 7 2 7 2 Self Clamped Inductive Switching Current : I AS [A] Fig. Typical Self Clamped Inductive Switching Current vs. Inductance 4 3 3 2 2 Inductance : L [mh] V CC = 3V V GE = V R G = kω 2 3 4 6 7 8 9 Fig. Typical Gate Charge Fig.2 Typical Capacitance vs. Collector To Emitter Gate To Emitter : V GE [V] 4 3 2 V CC = 2V I C = A T j = 2ºC Capacitance [pf] f= MHz V GE = V T j = 2ºC Cres Cies Coes.. Gate Charge : Q g [nc] Collector To Emitter : V CE [V] 6/8 2. - Rev.A
RGPZBM4FH Electrical Characteristic Curves Fig.3 Typical Switching Time vs. Junction Temperature V CC = 3V, I C = 8A, V GE = V, L= mh, R g = Ω t f Switching Time [μs] t d(off) t r. t d(on) 2 7 2 7 2 Fig.4 Transient Thermal Impedance Transient Thermal Impedance : Z thjc [ºC/W].. D=..3.2...2. Single Pulse C C2 C3 R R2 R3.472m 983.8u 3.844m 39.6m 98.3m 23.m...... P DM t t2 Duty=t/t2 Peak T j =P DM Z thjc T C Pulse Width : t[s] 7/8 2. - Rev.A
RGPZBM4FH Inductive Load Switching Circuit and Waveform Gate Drive Time 9% V GE % 9% D.U.T. I C % t d(on) t r t d(off) t f VG t on t off Fig. Inductive Load Switching Circuit V CE Fig.6 Inductive Load Switching Waveform Self Clamped Inductive Switching Circuit and Waveform V clamp I C D.U.T. V CE VG V CC E AS Fig.7 Self Clamped Inductive Switching Circuit Fig.8 Self Clamped Inductive Switching Waveform 8/8 2. - Rev.A
Notice Notes ) 2) 3) 4) ) 6) 7) 8) 9) ) ) 2) 3) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 4) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/ R2A