OmniVision OV2640 1/4-Inch 2 Megapixel CMOS Image Sensor (OV253AI Die Markings) TSMC 0.13 µm Process

Similar documents
Micron MT9T Megapixel, ¼ Optical Format, 1.75 µm Pixel Size System-on-Chip (SOC) CMOS Image Sensor

MagnaChip MC511DB 1.3 Megapixel CMOS Image Sensor 0.18 µm Process

Sony IMX Megapixel, 1.4 µm Pixel 1/3.2 Optical Format CMOS Image Sensor

Nikon 12.1 Mp CMOS Image Sensor from a D3s DSLR Camera with NC81361A Die Markings

Sony IMX018 CMOS Image Sensor Imager Process Review

FUJIFILM MS3897A CCD Image Sensor Imager Process Review

LSI Logic LSI53C1030 PCI-X to Dual Channel Ultra320 SCSI Controller 0.18 µm CMOS Process

Samsung S5K3BAFB 2 Megapixel CMOS Image Sensor 0.13 µm Copper CMOS Process Process Review Report

Panasonic DMC-GH Mp, 4.4 µm Pixel Size LiveMOS Image Sensor from Panasonic LUMIX DMC-GH1 Micro Four Thirds Digital Interchangeable Lens Camera

Olympus EVOLT E-410/Matsushita LiveMOS Image Sensor

Oki 2BM6143 Microcontroller Unit Extracted from Casio GW2500 Watch 0.25 µm CMOS Process

Texas Instruments BRF6350B Bluetooth Link Controller UMC 90 nm RF CMOS

Volterra VT1115MF PWM Controller Chip

Foveon FX17-78-F13D Mp, 7.8 µm Pixel Size CIS from Sigma DP1 Compact Digital Camera 0.18 µm Dongbu Process

Sharp NC Megapixel CCD Imager Process Review

CMOSIS CMV Mp, 5.5 µm Pixel Pitch High-Speed Pipelined Global Shutter CMOS Image Sensor with Correlated Double Sampling

Akustica AKU2000 MEMS Microphone. MEMS Process Review

Samsung K9G8G08U0M-PCB0 8 Gbit MLC NAND Flash Structural Analysis

PowerDsine/Freescale

1.3 Megapixel CMOS Image Sensor Process Review (including MN101E19A Signal Processing DSP Basic Device Analysis)

Sony IMX118CQT 18.5 Mp, 1.25 µm Pixel Pitch Back Illuminated CIS from the Sony DSC-WX100 Camera

Spansion S29GL512N11TAI Mbit MirrorBit TM Flash Memory Structural Analysis

Nanya elixir N2TU51280AF-37B 512 Mbit DDR2 SDRAM Structural Analysis

FLIR Systems Indigo ISC0601B from Extech i5 Infrared Camera

Microchip PIC18F4320-I/ML Enhanced Flash Microcontroller Structural Analysis

Texas Instruments Sitara XAM3715CBC Application Processor 45 nm UMC Low Power Process

Sony IMX128AQP 24.3 Mp 5.9 µm Pixel Pitch CMOS Image Sensor from Nikon D600. Module 1: Overview Analysis

Sony IMX Mp, 4.8 µm Pixel Size APS-C (DX Format) CMOS Image Sensor from Nikon D7000. Module 5: Substrate Dopant Analysis

Silicon Storage Technology SST39VF800A 8 Mbit Multi-Purpose Flash Memory Structural Analysis

Toshiba TH58NVG2S3BTG00 4 Gbit NAND Flash Structural Analysis

Nikon NC81369R 24.2 Mp, 3.8 µm Pixel Size, APS-C Format CMOS Image Sensor from the Nikon D3200. Module 1: Overview Analysis

Peregrine Semiconductor PE4268 SP6T RF UltraCMOS TM Switch Structural Analysis

Analog Devices AD7658 Analog to Digital Converter icmos Process Technology Process Review

Samsung K9F2G08U0M-YCB0 2Gbit NAND Flash Device Structural Analysis

Sony IMX145 8 Mp, 1.4 µm Pixel Pitch Back Illuminated (BSI) CMOS Image Sensor from the Apple iphone 4S Smartphone

Samsung K4H510838C-UCCC 512Mbit DDR SDRAM Structural Analysis

Nikon NC81369R 24.2 Mp, 3.8 µm Pixel Size, APS-C Format CMOS Image Sensor from the Nikon D3200. Module 4: Pixel Cross-Sectional Analysis

Nikon NC81369R 24.2 Mp, 3.8 µm Pixel Size, APS-C Format CMOS Image Sensor from the Nikon D3200. Module 5: Substrate Dopant Analysis

Microsoft X02046 IBM PowerPC Processor from the XBOX 360 Structural Analysis

Canon LC Mp, 4.3 µm Pixel Size, APS-C Format CMOS Image Sensor from the Canon EOS Rebel T4i (EOS 650D/EOS Kiss X6i)

MEMSIC MMC3120M Tri-Axis Magnetic Sensor

Samsung K9HAG08U1M-PCB0 16 Gbit MLC NAND Flash Structural Analysis Report

Matrix Semiconductor One Time Programmable Memory

Powerchip Semiconductor Corporation A3R12E3GEF G6E 635BLC4M 512 Megabit DDR2 SDRAM Structural Analysis

NVE IL715-3E GMR Type Digital Isolator (30457J Die Markings) 0.50 µm CMOS Process

Micron MT66R7072A10AB5ZZW 1 Gbit Phase Change Memory 45 nm BiCMOS PCM Process

Texas Instruments ISO7220A Capacitor Type Digital Isolator

OmniVision OVM7692 (OV289AA Die Markings) VGA CameraCubeChip. Module 3: Planar Pixel Analysis

SiTime SIT8002AC-13-18E50 One Time Programmable Oscillator

Sony IMX Mp, 1.2 µm Pixel Pitch Back Illuminated (Exmor R) CMOS Image Sensor from the Sony Cyber-shot HX300 Digital Compact Camera

Sony PMW-F55 CineAlta 4K PMW Series HD Super 35 mm Digital Motion Camera with Global Shutter CMOS Image Sensor. Module 3: Planar Pixel Analysis

Samsung K4B1G0846F-HCF8 1 Gbit DDR3 SDRAM 48 nm CMOS DRAM Process

Rockchip RK3188 Mobile Application Processor GF 28 nm SLP Gate First HKMG CMOS Process

Broadcom BCM43224KMLG Baseband/MAC/Radio All-in-One Die SMIC 65 nm Process

OmniVision OVM7692 (OV289AA Die Markings) VGA CameraCubeChip. Module 1: Overview Analysis

Intel Q3GM ES 32 nm CPU (from Core i5 660)

Altera 5SGXEA7K2F40C2ES Stratix V TSMC 28 nm HP Gate Last HKMG CMOS Process

nvidia GeForce FX 5700 Ultra (NV36) Graphics Processor Structural Analysis

Aptina MT9P111 5 Megapixel, 1/4 Inch Optical Format, System-on-Chip (SoC) CMOS Image Sensor

Freescale MCIMX357DVM5B 90 nm Multimedia Application Processor

Sony IMX096AQL 24.3 Mp, 3.9 µm Pixel Pitch APS-C CMOS Image Sensor from the Sony α77 (SLT-A77) Digital Single Lens Reflex (DSLR) Camera

IBM POWER7 Server 46J6702 IBM 45 nm Dual Stress Liner SOI CMOS Process with edram

InvenSense ITG-3200 Three-Axis Digital Output Yaw, Pitch, and Roll Gyroscope

MemsTech MSM3C-S4045 Integrated Silicon Microphone with Supplementary TEM Analysis

Intel D920 (Presler 65 nm node) 2.8 GHz Dual Core Microprocessor

Intel T2300 (Yonah 65 nm node) 1.66 GHz Dual Core Laptop Microprocessor Transistor Characterization Report

Freescale MCIMX535DVV1C i.mx535 Mobile Applications Processor

Texas Instruments THS7530PWP Gain Amplifier Structural Analysis

Intel Xeon E3-1230V2 CPU Ivy Bridge Tri-Gate 22 nm Process

Bosch Sensortec BMP180 Pressure Sensor

Motorola MPXV5004G Integrated Pressure Sensor Structural Analysis

Qualcomm MSM8260A Snapdragon S4 Dual-Core System-on-Chip (SoC) Mobile Applications Processor

Texas Instruments/Apple 343S0538 Touch Screen Controller with F Die Markings

Motorola PRF5P21240 RF Power MOSFET Structural Analysis

Apple A5 APL0498 (APL0498E01 Die Markings) Mobile Processor Extracted from the ipad 2

STMicroelectronics STMT05 S-Touch Capacitive Touch Screen Controller

Marvell 88E6046-TAH1 Four Port Fast Ethernet Plus Two Port Gigabit Ethernet Switch

FocalTech FT5206GE1 Capacitive Touch Screen Controller IC

Marvell I1062-B0 Hard Drive Controller SoC

Qualcomm MDM9215M Gobi 4G GSM/CDMA Modem 28 nm LP. Module 2: CMOS FEOL Analysis

STMicroelectronics LIS3L02AE 3-Axis Accelerometer. MEMS Process Review

AuthenTec AES1710 Secure Slide Fingerprint Sensor

Apple/Cirrus Logic 338S1081/46L01 Multi-Standard Audio Decoder

Freescale MCIMX6Q5EYM10AC (i.mx6q) Integrated Multimedia Applications Processor

Qualcomm QFE1100 Envelope Tracking PA Power Supply

InvenSense IDG-300 Dual-Axis Angular Rate Gyroscope Sensor

MediaTek MT6167A Smartphone Radio Frequency (RF) Transceiver

Apple/Dialog Semiconductor 343S0622-A1/D2018A WLED Driver

MediaTek MT3333AV (BT10085B Die) Satellite Receiver SoC

Samsung K3PE7E700B-XXC1 3x nm 4 Gbit Mobile DRAM. DRAM Process Report with Custom BEOL and Dopant Analysis

RDA Microelectronics RDA8851A GSM/GPRS Baseband SoC

Qualcomm Atheros AR8035 Ultra Low Power Single RGMII Gigabit Ethernet PHY

Analog Devices ADMP403 MEMS Microphone

AKM AK8973 and AK Axis Electronic Compass

Samsung SDP1301 DTV SERDES Interface

u-blox M8030-KT Concurrent Multi-GNSS Receiver

Panasonic DMC-GH Mp, 4.4 µm Pixel Size LiveMOS Image Sensor from Panasonic LUMIX DMC-GH1 Micro Four Thirds Digital Interchangeable Lens Camera

Marvell Avastar 88W ac Wi-Fi 2x2 MIMO Combo Chip

TriQuint SCM6M7010 WiMAX Dual-Band WiFi Front-End Module TriQuint TQPED 0.5 µm E-D phemt Process

FocalTech Systems FT5336GQQ and FT5436iGQQ (FS-123ATPBC Die) Capacitive Touch Screen Controller

Transcription:

March 5, 2007 OmniVision OV2640 1/4-Inch 2 Megapixel CMOS Image Sensor (OV253AI Die Markings) TSMC 0.13 µm Process Imager Process Review For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor technology, please call Sales at Chipworks. 3685 Richmond Road, Suite 500, Ottawa, ON K2H 5B7, Canada Tel: 613.829.0414 Fax: 613.829.0515 www.chipworks.com

Imager Process Review Table of Contents 1 Overview 1.1 List of Figures 1.2 List of Tables 1.3 Company Profiles 1.4 Introduction 1.5 Device Summary 1.6 Process Summary 2 Device Overview 2.1 Downstream Product Identification, Image Sensor Package and Die 2.2 Die Features 3 Process Analysis 3.1 General Device Structure 3.2 Dielectrics 3.3 Metallization 3.4 Vias and Contacts 3.5 Transistors and Poly 3.6 Isolation 3.7 Wells and Substrate 4 Pixel Analysis 4.1 Pixel Overview and Schematic 4.2 Pixel Plan View Analysis Active Pixels 4.3 Pixel Cross-Sectional Analysis Parallel to Transfer Lines 4.4 Pixel Cross-Sectional Analysis Parallel to Row Select 4.5 Microlens and Color Filter Analysis 5 Memory Cell Analysis 5.1 6T SRAM Overview and Schematic 5.2 6T SRAM Plan View Analysis 6 Critical Dimensions 6.1 Package, Die and Bond Pad Sizes 6.2 Dielectrics, Metals, Vias and Contacts 6.3 Transistors and Poly, Isolation and Wells 6.4 Pixel Dimensions

Imager Process Review 7 Statement of Measurement Uncertainty 8 References Report Evaluation

Overview 1-1 1 Overview 1.1 List of Figures 2 Device Overview 2.1.1 Sony Ericsson V630i Front 2.1.2 Sony Ericsson V630i Back 2.1.3 Sony Ericsson V630i Main Board Back 2.1.4 Image Sensor Assembly Top 2.1.5 Image Sensor Assembly Side 2.1.6 OV2640 Top Package View 2.1.7 OV2640 Bottom Package View 2.1.8 Plan View Package X-Ray 2.1.9 OV2640 Die 2.1.10 Die Markings 2.1.11 Analysis Sites 2.2.1 Package Cross Section 2.2.2 Die Corner A 2.2.3 Die Corner B 2.2.4 Die Corner C 2.2.5 Die Corner D 2.2.6 Die Feature A 2.2.7 Die Feature B 2.2.8 Die Feature C 3 Process Analysis 3.1.1 General View of OV2640 3.1.2 Pad Extension Layer and Bond Pad 3.2.1 Passivation 3.2.2 IMD 2 3.2.3 IMD 1 3.2.4 PMD 3.3.1 Minimum Pitch Metal 3 3.3.2 Minimum Pitch Metal 2 3.3.3 Minimum Pitch Metal 1 Logic 3.3.4 Minimum Pitch Metal 1 Pixel Array 3.4.1 Minimum Pitch Via 2s 3.4.2 Minimum Pitch Via 1s 3.4.3 Minimum Pitch Contacts to Poly 2 3.4.4 Minimum Pitch Contacts to Diffusion 3.5.1 MOS Transistor Oxide Etch 3.5.2 Minimum Gate Length NMOS Logic Transistors 3.5.3 Minimum Gate Length PMOS Logic Transistors 3.6.1 Poly over STI 3.6.2 Minimum Width STI 3.7.1 SCM of Peripheral Wells 3.7.2 SRP Analysis Sites

Overview 1-2 3.7.3 SRP of Peripheral N-Well (Location 1) 3.7.4 SRP of Peripheral P-well (Location 2) 3.7.5 SRP of Array Well Structure 4 Pixel Analysis 4.1.1 4-Shared Pixel Schematic (2T equivalent) 4.2.1 Pixel Array RBG Bayer Patterned Color Filters 4.2.2 Pixel at Metal 3 4.2.3 Aperture Shift Top Left Corner of Array 4.2.4 Aperture Shift Top Right Corner of Array 4.2.5 Pixel at Metal 2 4.2.6 Pixel at Metal 1 4.2.7 Pixel at Poly 4.2.8 Pixel at Diffusion 4.2.9 Bevel SCM of Pixel 4.3.1 Pixel at Poly Planes of Cross-Sectioning (Parallel to Transfer Lines) 4.3.2 Pixel Overview 4.3.3 Reset Gate Oxide Etch 4.3.4 Detail of Reset Gate Oxide Etch 4.3.5 Transfer Gate Oxide Etch 4.3.6 Detail of Transfer Gate Si Etch 4.3.7 SCM of Photocathode 4.3.8 V SS or V REF Contacts 4.3.9 Pixel Aperture Left 4.3.10 Pixel Aperture Shift 4.3.11 Edge of Array Microlens Shift 4.4.1 Pixel at Poly Planes of Cross-Sectioning (Parallel to Row Select) 4.4.2 Reset or Source Follower Gate 4.4.3 Detail of Reset or Source Follower Gate 4.4.4 Pixel Overview TEM 4.4.5 Transfer Gates TEM 4.4.6 Gate Wrap TEM 4.4.7 Transfer Gate Oxide TEM 4.4.8 Contact Etch Stop/AR Layer 4.5.1 Microlens Radius of Curvature 4.5.2 Pixel Field of View 4.5.3 Red-Green Pixel Pairs 4.5.4 Blue-Green Pixel Pairs 5 Memory Cell Analysis 5.1.1 6T SRAM Schematic 5.2.1 6T SRAM at Metal 2 5.2.2 6T SRAM at Metal 1 5.2.3 6T SRAM at Poly 5.2.4 6T SRAM at Diffusion

Overview 1-3 1.2 List of Tables 1 Overview 1.4.1 Device Identification 1.5.1 Device Summary 1.6.1 Process Summary 2 Device Overview 2.1.1 Package, Die and Bond Pad Sizes 3 Process Analysis 3.2.1 Dielectric Thicknesses 3.3.1 Metallization Vertical Dimensions 3.3.2 Metallization Observed Minimum Horizontal Dimensions 3.4.1 Via and Contact Dimensions 3.5.1 Peripheral Transistor and Poly Dimensions 3.6.1 STI Critical Dimensions 3.7.1 Die Thickness and Well Depths 4 Pixel Analysis 4.5.1 Pixel Horizontal Dimensions 4.5.2 Pixel Transistor Dimensions 4.5.3 Pixel Vertical Dimensions 6 Critical Dimensions 6.2.1 Dielectric Thicknesses 6.2.2 Metallization Vertical Dimensions 6.2.3 Metallization Observed Minimum Horizontal Dimensions 6.2.4 Via and Contact Dimensions 6.3.1 Peripheral Transistor and Poly Dimensions 6.3.2 STI Critical Dimensions 6.3.3 Die Thickness and Well Depths 6.4.1 Pixel Horizontal Dimensions 6.4.2 Pixel Transistor Dimensions 6.4.3 Pixel Vertical Dimensions

About Chipworks Chipworks is the recognized leader in reverse engineering and patent infringement analysis of semiconductors and electronic systems. The company s ability to analyze the circuitry and physical composition of these systems makes them a key partner in the success of the world s largest semiconductor and microelectronics companies. Intellectual property groups and their legal counsel trust Chipworks for success in patent licensing and litigation earning hundreds of millions of dollars in patent licenses, and saving as much in royalty payments. Research & Development and Product Management rely on Chipworks for success in new product design and launch, saving hundreds of millions of dollars in design, and earning even more through superior product design and faster launches. Contact Chipworks To find out more information on this report, or any other reports in our library, please contact Chipworks at: Chipworks 3685 Richmond Rd. Suite 500 Ottawa, Ontario K2H 5B7 Canada T: 1.613.829.0414 F: 1.613.829.0515 Web site: www.chipworks.com Email: info@chipworks.com Please send any feedback to feedback@chipworks.com