FOD0708 Single Channel CMOS Optocoupler, FOD0738 Dual Channel CMOS Optocoupler

Similar documents
MOCD213M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers

MOC70P1, MOC70P2, MOC70P3 Phototransistor Optical Interrupter Switch

KSD1621 NPN Epitaxial Silicon Transistor

KSA473 PNP Epitaxial Silicon Transistor

HSR312, HSR312L, HSR412, HSR412L Photovoltaic Solid-State Relay Optocouplers

MJD44H11 NPN Epitaxial Silicon Transistor

2N7002W N-Channel Enhancement Mode Field Effect Transistor

QEC112, QEC113 Plastic Infrared Light Emitting Diode

FYP2010DN Schottky Barrier Rectifier

FOD852 4-Pin High Operating Temperature Photodarlington Optocoupler

LL4148 Small Signal Diode

BAT54HT1G Schottky Barrier Diodes

FGD V PDP Trench IGBT

BC638 PNP Epitaxial Silicon Transistor

HCPL0700, HCPL0701, HCPL0730, HCPL0731 Low Input Current High Gain Split Darlington Optocouplers

1N4934-1N4937 Fast Rectifiers

FOD814 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier

FGPF70N33BT 330V, 70A PDP IGBT

BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor

J105 / J106 / J107 N-Channel Switch

FJB102 NPN High-Voltage Power Darlington Transistor

2N6520 PNP Epitaxial Silicon Transistor

FGD V, PDP IGBT

FFH60UP60S, FFH60UP60S3

FJN4303R PNP Epitaxial Silicon Transistor with Bias Resistor

KSP2222A NPN General-Purpose Amplifier

FDH / FDLL 300 / A / 333 High Contraction Low Leakage Diode

FFA60UA60DN UItrafast Rectifier

Part Number Top Mark Package Packing Method

FFPF30UA60S UItrafast Rectifier

FFH60UP40S, FFH60UP40S3

2N6517 NPN Epitaxial Silicon Transistor

FJA13009 High-Voltage Switch Mode Application

HCPL0600, HCPL0601, HCPL0611, HCPL0637, HCPL0638, HCPL0639 High Speed-10 MBit/s Logic Gate Optocouplers

1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode

BAV103 High Voltage, General Purpose Diode

FJP13007 High Voltage Fast-Switching NPN Power Transistor

FGH60N60SFD 600V, 60A Field Stop IGBT

BAT54SWT1G / BAT54CWT1G Schottky Diodes

FFD08S60S_F085. Features. FFD08S60S_F085 Stealth 2 Rectifier. 8A, 600V Stealth2 Rectifier. Absolute Maximum Ratings T C = 25 C unless otherwise noted

BAV ma 70 V High Conductance Ultra-Fast Switching Diode

TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor

BAT54 / BAT54A / BAT54C / BAT54S Schottky Diodes

FJP13009 High-Voltage Fast-Switching NPN Power Transistor

FGP5N60UFD 600V, 5A Field Stop IGBT

H11N1M, H11N2M, H11N3M 6-Pin DIP High Speed Logic Optocouplers

FGH40N60UFD 600V, 40A Field Stop IGBT

TIP147T PNP Epitaxial Silicon Darlington Transistor

October 2008 SuperFET TM FFB10UP20S Ultrafast Recovery Power Rectifier. Applications

BC327 PNP Epitaxial Silicon Transistor

KSC1815 NPN Epitaxial Silicon Transistor

2N7000BU / 2N7000TA Advanced Small-Signal MOSFET

FQD7N30 N-Channel QFET MOSFET

H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers

FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers

MID400 AC Line Monitor Logic-Out Device

RURG3020CC. 30 A, 200 V, Ultrafast Dual Diode. Features. Description. Applications. Packaging. Ordering Information. Symbol. Data Sheet November 2013

QEE113 Plastic Infrared Light Emitting Diode

4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers

BAS16 Small Signal Diode

MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)

FGH75N60UF 600 V, 75 A Field Stop IGBT

KA431S / KA431SA / KA431SL Programmable Shunt Regulator

FQD5N15 N-Channel QFET MOSFET

KSA1281 PNP Epitaxial Silicon Transistor

FJV3105R NPN Epitaxial Silicon Transistor with Bias Resistor

FFH60UP60S, FFH60UP60S3

H11L1M, H11L2M, H11L3M 6-Pin DIP Optocoupler

FDB8860 N-Channel Logic Level PowerTrench MOSFET. 30V, 80A, 2.6mΩ. Features. Applications. December R DS(ON) = 1.9mΩ (Typ), V GS = 5V, I D = 80A

Features. Packaging. 12 A Square Wave, 20 khz Nonrepetitive Peak Surge Current... I FSM

TIP102 NPN Epitaxial Silicon Darlington Transistor

KSC2383 NPN Epitaxial Silicon Transistor

J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch

FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m Features

FQB7N65C 650V N-Channel MOSFET

FDS8949_F085 Dual N-Channel Logic Level PowerTrench MOSFET

FIN1002 LVDS 1-Bit, High-Speed Differential Receiver

MM74HC08 Quad 2-Input AND Gate

Features. TA=25 o C unless otherwise noted

Package Description. Device also available in Tape and Reel except for N14A. Specify by appending suffix letter X to the ordering number.

MM74HC Stage Binary Counter

Features. 6A, 600V Hyperfast Diodes. Applications. Ordering Information. Packaging. Symbol. Data Sheet May 2013

KSC1815 NPN Epitaxial Silicon Transistor

Description TO-3PN. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 600 V V GSS Gate-Soure voltage ±30 V

Applications. Symbol Parameter Ratings Units V DS Drain to Source Voltage 100 V V GS Gate to Source Voltage ±20 V

FGPF V PDP Trench IGBT

FCP36N60N N-Channel MOSFET 600V, 36A, 90mΩ Features

FQH8N100C 1000V N-Channel MOSFET

2N5550 NPN Epitaxial Silicon Transistor

KSP44/45 NPN Epitaxial Silicon Transistor

Symbol Parameter Ratings Units V DS Drain to Source Voltage 20 V V GS Gate to Source Voltage ±8 V -Continuous T

FQD7P20 P-Channel QFET MOSFET

FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT

MOCD223-M Dual Channel Phototransistor Small Outline Surface Mount Optocouplers

FJV42 NPN High-Voltage Transistor

BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor

BD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor

PN2907 / MMBT2907 PNP General-Purpose Transistor

KA431S / KA431SA / KA431SL Programmable Shunt Regulator

Transcription:

FOD00 Single Channel CMOS Optocoupler, FOD0 Dual Channel CMOS Optocoupler Features +V CMOS compatibility ns typical pulse width distortion 0ns max. pulse width distortion 0ns max. propagation delay skew High speed: MBd 0ns max. propagation delay 0kV/µs minimum common mode rejection 0 C to 00 C temperature range UL approved (file #E9000) Applications Line receivers Pulse transformer replacement Output interface to CMOS-LSTTL-TTL Wide bandwidth analog coupling Schematics NC ANODE CATHODE NC FOD00 V DD NC V O GND ANODE CATHODE CATHODE ANODE General Description April 009 The FOD00 and FOD0 optocouplers consist of an AlGaAs LED optically coupled to a high speed transimpedance amplifier and voltage comparator. These optocouplers utilize the latest CMOS IC technology to achieve outstanding performance with very low power consumption. The devices are housed in a compact -pin SOIC package for optimum mounting density. FOD0 V DD V O V O GND TRUTH TABLE LED OFF ON V O OUTPUT H L Note: A 0.µF bypass capacitor must be connected between pins and. FOD00, FOD0 Rev..0.

Absolute Maximum Ratings (T A = C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Max. Units T S Storage Temperature 0 + C T A Ambient Operating Temperature 0 +00 C V DD Supply Voltages 0 Volts V O Output Voltage 0. V DD + 0. Volts I O Average Output Current ma I F Average Forward Input Current 0 ma Lead Solder Temperature 0 C for 0 sec.,. mm below seating plane Solder Reflow Temperature Profile See Solder Reflow Temperature Profile Section LED Power Dissipation Single Channel Dual Channel Detector Power Dissipation Single Channel Dual Channel Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Electrical Characteristics (T A = 0 C to +00 C) and. V V DD. V *All typicals at T A = C and V DD = V unless otherwise noted. 0mW (derate above 9 C,.mW/ C) 0mW per channel (derate above 90 C,.mW/ C) mw (derate above C,.mW/ C) mw per channel (derate above 90 C,.0mW/ C) Symbol Parameter Min. Max. Units T A Ambient Operating Temperature 0 +00 C V DD Supply Voltages.. Volts I F Input Current (ON) 0 ma Symbol Parameter Test Conditions Min. Typ.* Max. Units Fig. V F Input Forward Voltage I F = ma... V 9 BV R Input Reverse Breakdown Voltage I R = 0µA V V OH Logic High Output Voltage I F = 0, I O = 0µA.0.0 V V OL Logic Low Output Voltage I F = ma, I O = 0µA 0.0 0. V I TH Input Threshold Current (FOD00) (FOD0) I DDL Logic Low Output Supply Current (FOD00) (FOD0) I DDH Logic High Output Supply Current (FOD00) (FOD0) I OL = 0µA.0. I F = ma..9 I F = 0.....0.0.0.0 ma, ma, ma, FOD00, FOD0 Rev..0.

Switching Characteristics Over recommended temperature (T A = 0 C to +00 C) and. V V DD. V. All typical specifications are at T A = C, V DD = + V. Symbol Parameter Test Conditions Min. Typ.* Max. Units t PHL t PLH Propagation Delay Time to Logic Low Output Propagation Delay Time to Logic High Output *All typicals at T A = C and V DD = V unless otherwise noted. Isolation Characteristics (T A = -0 C to +00 C Unless otherwise specified.) *All typical values are at V CC = V, T A = C I F = ma, C L = pf CMOS Signal Levels (Note ) (Fig. 0) I F = ma, C L = pf CMOS Signal Levels, (Note ) (Fig. 0) 0 0 ns FOD00 0 ns FOD0 0 PW Pulse Width 00 ns PWD Pulse Width Distortion I F = ma, C L = pf, 0 0 ns CMOS Signal Levels (Note ) t PSK Propagation Delay Skew I F = ma, C L = pf, CMOS Signal Levels (Note ) 0 ns t R Output Rise Time (0% 90%) I F = ma, C L = pf, CMOS Signal Levels ns t F Output Fall Time (90% 0%) I F = ma, C L = pf, CMOS Signal Levels ns CM H Common Mode Transient Immunity at Logic High Output CM L Common Mode Transient Immunity at Logic Low Output V CM = 000V, T A = C, I F = 0mA, (Note ) (Fig. ) V CM = 000V, T A = C, I F = ma, (Note ) (Fig. ) 0 kv/µs 0 kv/µs Characteristics Test Conditions Symbol Min Typ.* Max Unit Input-Output Insulation Leakage Current Withstand Insulation Test Voltage Relative humidity = %, T A = C, t = s, V I-O = 000 VDC (Note ) I I-O 0µA, R H < 0%, T A = C, t = min. (Note ) I I-O.0 µa V ISO 00 V RMS Resistance (Input to Output) V I-O = 00V (Note ) R I-O 0 Ω Capacitance (Input to Output) f = MHz (Note ) C I-O 0. pf Notes:. Propagation delay time, high to low (t PHL ), is measured from the 0% level on the rising edge of the input pulse to the.v level of the falling edge of the output voltage signal. Propagation delay time, low to high (t PLH ), is measured from the 0% level on the falling edge of the input pulse to the.v level of the rising edge of the output voltage signal.. Pulse width distoration is defined as the absolute difference between the high to low and low to high propagation delay times, t PHL t PLH.. Propagation delay skew, t PSK, is defined as the worst case difference in t PHL or t PLH between units within the recommended operating range of the device.. CM H The maximum tolerated rate of rise of the common mode voltage to ensure the output will remain in the high state, (i,e., V OUT >.0V) Measured in kilovolts per microsecond (kv/µs).. CM L The maximum tolerated rate of fall of the common mode voltage to ensure the output will remain in the low state, (i,e., V OUT < 0.V). Measured in kilovolts per microsecond (kv/µs).. Isolation voltage, V ISO, is an internal device dielectric breakdown rating. For this test, pins,,, are common, and pins,,, are common. FOD00, FOD0 Rev..0.

Typical Performance Curves I TH -Input Threshold Current (ma) I DDL -LogicLow Output Supply Current (ma).0..0..0. V DD =V I OL =0µA Figure. FOD00 Typical Logic Low Output Supply Current vs Ambient Temperature V DD =V I F = ma Figure. FOD00 Typical Input Threshold Current vs Ambient Temperature -0-0 0 0 0 0 0 00 T A -Ambient Temperature ( o C).0-0 -0 0 0 0 0 0 00 T A -AmbientTemperature ( o C) t P -Propagation Delay (ns) I DDH -LogicHighOutput Supply Current (ma) Figure. FOD00 Typical Switching Speed vs Pulse Input Current 00 0 0 0 0 t PHL t PLH PWD 0 9.0..0..0. I F -Pulse Input Current (ma) V DD =V T A = o C Figure. FOD00 Typical Logic High Output Supply Current vs Ambient Temperature V DD =V.0-0 -0 0 0 0 0 0 00 T A -AmbientTemperature ( o C) FOD00, FOD0 Rev..0.

Typical Performance Curves (Continued) I TH -Input Threshold Current (ma) I DDL -LogicLow Output Supply Current (ma)..0..0..0 V DD =V I OL =0µA Figure. FOD0 Typical Logic Low Output Supply Current vs Ambient Temperature V DD =V I F = ma Figure. FOD0 Typical Input Threshold Current vs Ambient Temperature -0-0 0 0 0 0 0 00 T A -Ambient Temperature ( o C). -0-0 0 0 0 0 0 00 T A -AmbientTemperature ( o C) Channel Channel t P -Propagation Delay (ns) I DDH -LogicHighOutput Supply Current (ma) 00 0 0 0 0..0..0..0 Figure. FOD0 Typical Switching Speed vs Pulse Input Current V DD =V T A = o C 0 9 Figure. FOD0 Typical Logic High Output Supply Current vs Ambient Temperature V DD =V t PHL t PLH PWD I F -Pulse Input Current (ma). -0-0 0 0 0 0 0 00 T A -AmbientTemperature ( o C) Channel Channel FOD00, FOD0 Rev..0.

Typical Performance Curves (Continued) I F -Forward Current (ma) Figure 9. Input Forward Current vs. Forward Voltage 00 0 T A =00 o C T A = o C 0. 0.0 T A =-0 o C T A =0 o C T A = o C 0.00 0. 0.9.0....... V F -Forward Voltage (V) FOD00, FOD0 Rev..0.

Pulse Gen. t f = t r = ns Z O = 0 Ω Input Monitor Node I F R IN V FF Test Circuit for FOD00 A B VCM 0V VOH VO I F Vcc Pulse Gen. Z O = 0 Ω t f = t r = ns I F Input 0.µF Monitoring Node Output Monitoring Node R IN Fig. 0 Test Circuit and Waveforms for t PLH, t PHL, t r and t f. GND V CM Pulse Gen V CC Test Circuit for FOD00 0.µF bypass Test Circuit for FOD0 Peak Switching Pos. (A), I = 0 F V O (Min) +V Output (V O) I F V FF Vcc Output Monitoring Node 0.µF Bypass B A Input Output t PHL 90% Dual Channel V CM + Pulse Generator Z O = 0Ω t f Test Circuit for FOD0 0% 0% Waveforms t PLH 0.µF Bypass t r +V Output V O Monitoring Node CM H I F = ma 0% 90%.V CMOS V OL V O (Max) VO VOL Switching Pos. (B), I = ma F CM L Fig. Test Circuit Common Mode Transient Immunity (FOD00 and FOD0) FOD00, FOD0 Rev..0.

Package Dimensions -pin SOIC Surface Mount SEATING PLANE 0. (.) 0. (.) Recommended Pad Layout 0.0 (0.) 0.0 (0.) 0.00 (.) Typ. 0.0 (.) 0. (.) Lead Coplanarity: 0.00 (0.0) MAX 0. (.99) 0. (.9) 0. (.) 0. (.) 0.00 (0.0) 0.00 (0.0) 0.0 (0.) 0.00 (.) 0. (.9) 0. (.9) 0.00 (0.) 0.00 (0.) 0.00 (.) Dimensions in inches (mm). Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ FOD00, FOD0 Rev..0.

Ordering Information Option Order Entry Identifier Description No Suffix FOD00 Shipped in tubes (0 units per tube) R FOD00R Tape and Reel (00 units per reel) Marking Information V X YY 00 Definitions Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option See order entry table) One digit year code, e.g., Two digit work week ranging from 0 to Assembly package code S FOD00, FOD0 Rev..0. 9

Carrier Tape Specification.0 ± 0.0.0 ± 0.0.0 ± 0.0 0.0 MAX.0 ± 0.0. ± 0.0 0. MAX.0 ± 0.0 User Direction of Feed Dimensions in mm Ø. MIN. ± 0.0. ± 0.0.0 ± 0..0 ± 0.0 Ø. ± 0. FOD00, FOD0 Rev..0. 0

Reflow Profile Temperature ( C) 0 0 0 00 0 0 0 0 00 0 0 0 0 0 TP TL Tsmax Tsmin Max. Ramp-up Rate = C/S Max. Ramp-down Rate = C/S Preheat Area 0 0 0 Time C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 0 C Temperature Max. (Tsmax) 00 C Time (t S ) from (Tsmin to Tsmax) 0 0 seconds Ramp-up Rate (t L to t P ) C/second max. Liquidous Temperature (T L ) C Time (t L ) Maintained Above (T L ) 0 0 seconds Peak Body Package Temperature 0 C +0 C / C Time (t P ) within C of 0 C 0 seconds Ramp-down Rate (T P to T L ) C/second max. Time C to Peak Temperature minutes max. ts tl tp FOD00, FOD0 Rev..0.

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,and is not intended to be an exhaustive list of all such trademarks. Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Saving our world, mw/w/kw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT - SuperSOT - SuperSOT - SupreMOS SyncFET Sync-Lock * The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * µserdes UHC Ultra FRFET UniFET VCX VisualMax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERSTHESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical andproduct information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. FOD00, FOD0 Rev..0. Rev. I0