600V Super-Junction Power MOSFET FEATURES l Very low FOM R DS(on) Q g l 100% avalanche tested l RoHS compliant APPLICATIONS l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) Device Marking and Package Information Device TPA60R160M TPP60R160M TPV60R160M TPW60R160M Package TO-220F TO-220 TO-3PN TO-247 Marking 60R160M 60R160M 60R160M 60R160M Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol Value TO-220 TO-3PN TO-247 TO-220F Unit Drain-Source Voltage (V GS = 0V) V DSS 600 V Continuous Drain Current T C = 25ºC T C = 100ºC I D 20 12 A Pulsed Drain Current (note1) I DM 60 A Gate-Source Voltage V GSS ±30 V Single Pulse Avalanche Energy (note2) E AS 418 mj Avalanche Current (note1) I AR 3.4 A Repetitive Avalanche Energy (note1) E AR 0.63 mj MOSFET dv/dt ruggedness, V DS = 0...480V dv/dt 50 Reverse diode dv/dt, V DS = 0 480V, I SD I D dv/dt 15 Power Dissipation (T C = 25ºC) P D 151 34 W Operating Junction and Storage Temperature Range T J, T stg -55~+150 ºC Thermal Resistance Parameter Symbol Value TO-220 TO-3PN TO-247 TO-220F Unit Thermal Resistance, Junction-to-Case R thjc 0.83 3.7 Thermal Resistance, Junction-to-Ambient R thja 62 80 ºC/W V2.0 1
Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Value Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D = 250µA 600 -- -- V Zero Gate Voltage Drain Current I DSS V DS = 600V, V GS = 0V, T J = 25ºC -- -- 1 V DS = 600V, V GS = 0V, T J = 150ºC -- -- 100 μa Gate-Source Leakage I GSS V GS = ±30V -- -- ±100 na Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 250µA 2.5 -- 4.0 V Drain-Source On-Resistance (Note3) R DS(on) V GS = 10V, I D = 10A -- 0.14 0.16 Ω Gate resistance R G f = 1.0MHz open drain -- 12 -- Ω Dynamic Input Capacitance C iss V GS = 0V, -- 1726 -- Output Capacitance C oss V DS = 100V, -- 71 -- f = 1.0MHz Reverse Transfer Capacitance C rss -- 5 -- pf Total Gate Charge Q g V DD = 480V, I D = 20A, -- 38 -- Gate-Source Charge Q gs -- 8 -- V GS = 10V Gate-Drain Charge Q gd -- 14.5 -- nc Turn-on Delay Time t d(on) -- 31 -- Turn-on Rise Time t r V DD = 400V, I D = 20A, -- 69 -- Turn-off Delay Time t d(off) R G = 25Ω -- 124 -- ns Turn-off Fall Time t f -- 48 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current I S -- -- 20 T C = 25ºC Pulsed Diode Forward Current I SM -- -- 60 A Body Diode Voltage V SD T J = 25ºC, I SD = 20A, V GS = 0V -- 0.9 1.2 V Reverse Recovery Time t rr V R = 400V, I F = I S, -- 460 -- ns Reverse Recovery Charge Q rr -- 5.5 -- μc di F /dt = 100A/μs Peak Reverse Recovery Current I rrm -- 24 -- A Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. I AS = 3.4A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. Pulse Test: Pulse Width 300μs, Duty Cycle 1% V2.0 2
Typical Characteristics T J = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics V GS, Gate-to-Source Voltage (V) R DS(on), On-Resistance (Ω) I D, Drain Current (A) 20V 10V 7V 6V 5.5V 5v V DS, Drain-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current V GS = 10V T J = 25ºC I D, Drain Current (A) Figure 5. Gate Charge V DD = 120V V DD = 520V I s, Source Current (A) Capacitance (pf) I D, Drain Current (A) 10 5 10 4 10 3 10 2 10 1 10 2 10 1 10-2 10-3 V DS = 10V V GS, Gate-to-Source Voltage (V) V GS = 0 f = 1MHz Figure 4. Capacitance C iss C oss C rss V DS, Drain-to-Source Voltage (V) Figure 6. Body Diode Forward Voltage T J = 150ºC T J = 25ºC T J = 25ºC T J = 150ºC Q g, Total Gate Charge (nc) V SD, Source-to-Drain Voltage (V) V2.0 3
Typical Characteristics T J = 25ºC, unless otherwise noted Figure 7. On-Resistance vs. Junction Temperature Figure 8. Threshold Voltage vs. Junction Temperature Z thjc, Thermal Impedance (K/W) R DS(on), (Normalized) 10-2 V GS = 10V I D = 10A T J, Junction Temperature (ºC) Figure 9. Transient Thermal Impedance TO-220/TO-3PN/TO-247 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse Z thjc, Thermal Impedance (K/W) V GS(th), (Variance) 10-5 10-4 10-3 10-2 10 1 10-5 10-4 10-3 10-2 10 1 10 2 10 1 10-2 I D = 250µA T J, Junction Temperature (ºC) Figure 10. Transient Thermal Impedance TO-220F D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse T p, Pulse Width (s) T p, Pulse Width (s) 10 2 Figure 12. Safe operation area for TO-220/TO-3PN/TO-247 10 2 Figure 13. Safe operation area for TO-220F I D, Drain Current(A) 10 1 10-2 t p = 1us t p = 10us t p = 100us t p = 1ms t p = 10ms DC I D, Drain Current(A) 10 1 10-2 t p = 1us t p = 10us t p = 100us t p = 1ms t p = 10ms DC 10 1 10 2 10 3 V DS, Drain-Source Voltage(V) 10 1 10 2 10 3 V DS, Drain-Source Voltage(V) V2.0 4
Figure A:Gate Charge Test Circuit and Waveform Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform V2.0 5
TO-220F V2.0 6
TO-220 V2.0 7
TO-3PN V2.0 8
TO-247 V2.0 9
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