MDHTN0Y N-Channel MOSFET 00V, 0.85A,.35Ω General Description The MDHTN0Y uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHTN0Y is suitable device for LED TV and general purpose applications. Features V DS = 00V = 0.85A R DS(ON).35Ω Applications Power Supply PFC LED TV @ = 0V @ = 0V D SOT-3 G D S Absolute Maximum Ratings (Ta = 5 o C) Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 00 V Gate-Source Voltage S ±0 V Continuous Drain Current T C=5 o C 0.85 A T C=00 o C 0.5 A Pulsed Drain Current () M 3. A Power Dissipation T C=5 o C P D. W Derate above 5 o C 0.07 W/ o C Peak Diode Recovery dv/dt (3) Dv/dt 5.5 V/ns Repetitive Pulse Avalanche Energy () E AR 0. mj Avalanche current () I AR 0.85 A Single Pulse Avalanche Energy () E AS 5 mj Junction and Storage Range T J, T stg -55~50 o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient * R θja 60 * When mounted on the minimum pad size recommended (PCM Mount) o C/W
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDHTN0YURH -55~50 o C SOT-3 Reel and Tape Halogen Free Electrical Characteristics (Ta =5 o C) Static Characteristics Characteristics Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS = 50μA, = 0V 00 - - Gate Threshold Voltage (th) V DS =, = 50μA.0 -.0 Drain Cut-Off Current SS V DS = 00V, = 0V - - μa Gate Leakage Current I GSS = ±0V, V DS = 0V - - 00 na Drain-Source ON Resistance R DS(ON) = 0V, = 0.5A -..35 Ω Forward Transconductance g fs V DS = 30V, = 0.5A -.3 - S Dynamic Characteristics Total Gate Charge Q g - 3. - Gate-Source Charge Q gs V DS = 60V, = 3.8A, = 5V - 0.6 - Gate-Drain Charge Q gd -.6 - Input Capacitance C iss - 8 - Reverse Transfer Capacitance C rss V DS = 5V, = 0V, f =.0MHz -.3 - Output Capacitance C oss -.7 - Turn-On Delay Time t d(on) - 6 - Rise Time t r = 5V, V DS = 00V, = 3.8A, - 38 - Turn-Off Delay Time t d(off) R G = 5Ω - - Fall Time t f - 3 - Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current I S - 0.85 - A Source-Drain Diode Forward Voltage V SD I S = 0.85A, = 0V - -.5 V Body Diode Reverse Recovery Time t rr - 90 - ns I F = 3.8A, dl/dt = 00A/μs (3) Body Diode Reverse Recovery Charge Q rr - 0. - μc V nc pf ns Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 50 C.. Pulse test: pulse width 300us, duty cycle %, pulse width limited by junction temperature T J(MAX)=50 C. 3. I SD 3.8A, di/dt 300A/us, V DD BVdss, R g =5Ω, Starting T J=5 C. L=08mH, I AS=0.85A, V DD=50V, R g =5Ω, Starting T J=5 C
(A) BV DSS, (Normalized) Drain-Source Breakdown Voltage Reverse Drain Current [A] R DS(ON), (Normalized) Drain-Source On-Resistance,Drain Current [A] R DS(ON) [Ω ] MDHTN0Y N-channel MOSFET 00V 6 5 3 V gs =3.0V =3.5V =.0V =.5V =5.0V =5.5V =6.0V =7.0V =8.0V =0.0V =5.0V Notes. 50 μs Pulse Test. T C =5 5 3 =5V =0V 3 5 6 7 8 9 0 3 5 6 7 8 9 0 V DS,Drain-Source Voltage [V] Fig. On-Region Characteristics 0 3 5 6,Drain Current [A] Fig. On-Resistance Variation with Drain Current and Gate Voltage 3.0..5. = 0 V. =0.5A. = 0 V. = 50 μa..0.5.0.0 0.9 0.5 0.0-50 0 50 00 50 T J, Junction [ o C] Fig.3 On-Resistance Variation with 0.8-50 0 50 00 50 T J, Junction [ o C] Fig. Breakdown Voltage Variation vs. 0 * Notes ;. Vds=30V. = 0 V.50 s Pulse test R 50 5 50 5-55 0 3 5 [V] Fig.5 Transfer Characteristics 0. 0. 0.6 0.8.0.. V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and 3
Power (W), Drain Current [A], Drain Current [A] Z θ JC (t), Thermal Response, Gate-Source Voltage [V] Capacitance [pf] MDHTN0Y N-channel MOSFET 00V 0 Note : = 3.8A 0V C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 8 60V 00V C iss 00 C oss 6 C rss Notes ;. = 0 V. f = MHz 0 0 6 8 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics 0 0 V DS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 0 Operation in This Area is Limited by R DS(on) 0 D=0.5 0 0 0 00 s ms 0 ms 00 ms 0 0 0 0. 0. 0.05 0.0 0.0 0-0 - Single Pulse T J =Max rated T C =5 DC 0-0 0 0 0 V DS, Drain-Source Voltage [V] 0-0 - single pulse Duty Factor, D=t /t PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JA =60 /W 0-5 0-0 -3 0-0 - 0 0 0 0 0 3 t, Rectangular Pulse Duration [sec] Fig.9 Maximum Safe Operating Area Fig.0 Transient Thermal Response Curve 00 00 000 900 800 700 600 500 00 300 00 00 single Pulse R thja = 60 /W T C = 5 0 E- E-3 0.0 0. 0 Pulse Width (s) Fig. Single Pulse Maximum Power Dissipation.0 0.8 0.6 0. 0. 0.0 5 50 75 00 5 50 T C, Case [ ] Fig. Maximum Drain Current vs. Case
Physical Dimension SOT-3 Dimensions are in millimeters, unless otherwise specified 5
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