DIGITAL AUDIO MOSFET PD - 97249A IRFI422H-7P Features Ÿ Integrated half-bridge package Ÿ Reduces the part count by half Ÿ Facilitates better PCB layout Ÿ Key parameters optimized for Class-D audio amplifier applications Ÿ Low R DS(ON) for improved efficiency Ÿ Low Qg and Qsw for better THD and improved efficiency Ÿ Low Qrr for better THD and lower EMI Ÿ Can delivery up to 50W per channel into 4Ω load in half-bridge configuration amplifier Ÿ Lead-free package Key Parameters g V DS V R DS(ON) typ. @ V 58 m: Q g typ. 2 nc Q sw typ. 6.9 nc R G(int) typ. 3.4 Ω T J max 50 C TO-220 Full-Pak 5 PIN G, G2 D, D2 S, S2 Description Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings g Parameter Max. Units V DS Drain-to-Source Voltage V V GS Gate-to-Source Voltage ±20 I D @ T C = 25 C Continuous Drain Current, V GS @ V A I D @ T C = C Continuous Drain Current, V GS @ V 6.8 I DM Pulsed Drain Current c 44 P D @T C = 25 C Power Dissipation f 8 W P D @T C = C Power Dissipation f Linear Derating Factor 7.0 0.4 W/ C E AS Single Pulse Avalanche Energyd 4 mj T J Operating Junction and -55 to + 50 C T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) Mounting torque, 6-32 or M3 screw 300 lbxin (.Nxm) Thermal Resistance g Parameter Typ. Max. Units R θjc Junction-to-Case f 7. C/W R θja Junction-to-Ambient (free air) 65 www.irf.com 08/2/06
IRFI422H-7P Electrical Characteristics @ T J = 25 C (unless otherwise specified) g Parameter Min. Typ. Max. Units BV DSS Drain-to-Source Breakdown Voltage V Conditions V GS = 0V, I D = 250µA ΒV DSS / T J Breakdown Voltage Temp. Coefficient 0.09 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance 58 72.5 mω V GS = V, I D = 6.6A e V GS(th) Gate Threshold Voltage 3.0 5.0 V V DS = V GS, I D = 250µA V GS(th) / T J Gate Threshold Voltage Coefficient - mv/ C I DSS Drain-to-Source Leakage Current 20 µa V DS = V, V GS = 0V 250 V DS = V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 200 na V GS = 20V Gate-to-Source Reverse Leakage -200 V GS = -20V g fs Forward Transconductance S V DS = 50V, I D = 6.6A Q g Total Gate Charge 2 8 Q gs Pre-Vth Gate-to-Source Charge.6 V DS = 80V Q gs2 Post-Vth Gate-to-Source Charge 0.7 nc V GS = V Q gd Gate-to-Drain Charge 6.2 I D = 6.6A Q godr Gate Charge Overdrive 3.5 See Fig. 6 and 5 Q sw Switch Charge (Q gs2 + Q gd ) 6.9 R G(int) Internal Gate Resistance 3.4 Ω t d(on) Turn-On Delay Time 4.7 V DD = 50V, V GS = Ve t r Rise Time 8.3 I D = 6.6A t d(off) Turn-Off Delay Time 9.5 ns R G = 2.5Ω t f Fall Time 4.3 C iss Input Capacitance 490 V GS = 0V C oss Output Capacitance 64 pf V DS = 50V C rss Reverse Transfer Capacitance 34 ƒ =.0MHz, See Fig.5 C oss eff. Effective Output Capacitance V GS = 0V, V DS = 0V to 80V L D Internal Drain Inductance 4.5 Between lead, D nh 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package and center of die contact S Diode Characteristics g Parameter Min. Typ. Max. Units I S @ T C = 25 C Continuous Source Current (Body Diode) A I SM Pulsed Source Current 44 (Body Diode)c V SD Diode Forward Voltage.3 V t rr Reverse Recovery Time 36 54 ns Q rr Reverse Recovery Charge 56 84 nc Conditions MOSFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I S = 6.6A, V GS = 0V e T J = 25 C, I F = 6.6A di/dt = A/µs e Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.9mH, R G = 25Ω, I AS = 6.6A. ƒ Pulse width 400µs; duty cycle 2%. R θ is measured at T J of approximately 90 C. Specifications refer to single MosFET. 2 www.irf.com
C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) IRFI422H-7P VGS TOP 5V 2V V 9.0V 8.0V 7.0V BOTTOM 6.0V VGS TOP 5V 2V V 9.0V 8.0V 7.0V BOTTOM 6.0V 6.0V 6.0V 60µs PULSE WIDTH Tj = 25 C 0. Fig. Typical Output Characteristics 60µs PULSE WIDTH Tj = 50 C 0. Fig 2. Typical Output Characteristics 2.5 I D = 6.6A V GS = V T J = 50 C T J = 25 C V DS = 50V 60µs PULSE WIDTH 0. 3 4 5 6 7 8 9 V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 2.0.5.0 0.5-60 -40-20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature 00 0 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 2.0.0 8.0 I D = 6.6A V DS = 80V V DS = 50V V DS = 20V C iss 6.0 C oss C rss 4.0 2.0 0.0 0 2 4 6 8 2 4 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs.drain-to-source Voltage Fig 6. Typical Gate Charge vs.gate-to-source Voltage www.irf.com 3
I D, Drain Current (A) V GS(th), Gate Threshold Voltage (V) I SD, Reverse Drain Current (A) IRFI422H-7P 0 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 50 C µsec T J = 25 C 0. msec V GS = 0V 0. 0.0 0.5.0.5 V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 2 msec 0.0 Tc = 25 C Tj = 50 C Single Pulse DC 0.00 0 4.5 Fig 8. Maximum Safe Operating Area 4.0 8 6 3.5 3.0 I D = 250µA 4 2.5 2 2.0 0 25 50 75 25 50 T J, Junction Temperature ( C) Fig 9. Maximum Drain Current vs. Junction Temperature.5-75 -50-25 0 25 50 75 25 50 T J, Temperature ( C ) Fig. Threshold Voltage vs. Temperature D = 0.50 0.20 0. Thermal Response ( Z thjc ) 0. 0.0 0.05 0.02 0.0 SINGLE PULSE ( THERMAL RESPONSE ) R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri R 4 Ri ( C/W) τi (sec) R 4 0.7942 0.000208 Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc 0.00 E-006 E-005 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com τ 4 τ 4 τ C τ.3536 0.00434 2.2345 0.647 2.777.9398
E AS, Single Pulse Avalanche Energy (mj) R DS(on), Drain-to -Source On Resistance (m Ω) IRFI422H-7P 200 75 50 I D = 6.6A 75 50 25 I D TOP.2A 2.A BOTTOM 6.6A 25 T J = 25 C 75 50 75 T J = 25 C 25 50 4 5 6 7 8 9 2 3 4 5 6 V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance vs. Gate Voltage 0 25 50 75 25 50 Starting T J, Junction Temperature ( C) Fig 3a. Maximum Avalanche Energy vs. Drain Current 5V tp V (BR)DSS V DS L DRIVER R G 20V V GS tp D.U.T I AS 0.0Ω + - V DD A I AS Fig 3b. Unclamped Inductive Test Circuit Fig 3c. Unclamped Inductive Waveforms L D V DS V DD + - V DS 90% D.U.T % V GS Pulse Width < µs Duty Factor < 0.% V GS t d(on) t r t d(off) t f Fig 4a. Switching Time Test Circuit Fig 4b. Switching Time Waveforms Vds Id Vgs 0 K DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 5a. Gate Charge Test Circuit Fig 5b Gate Charge Waveform www.irf.com 5
IRFI422H-7P TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 7 (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak 5-Pin Part Marking Information Ã4 TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.08/06 6 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/