HiPerFAST TM IGBT with Diode IXGH 2N6BU S = 6 V 25 = 6 A (sat) = 2. V t fi = 8 ns Symbol Test Conditions Maximum Ratings S to 5 C 6 V V CGR to 5 C; R GE = MΩ 6 V S Continuous ±2 V M Transient ± V 25 6 A 9 = 9 C 2 A M, ms 2 A SSOA = 5 V, T VJ, R G = Ω M = 64 A (RBSOA) Clamped inductive load, L = µh @.8 S P C 2 W -55... +5 C M 5 C T stg -55... +5 C Maximum Lead and Tab temperature for soldering C.6 mm (.62 in.) from case for s M d Mounting torque, TO-247 AD./ Nm/lb.in. Weight 6 g Symbol Test Conditions Characteristic Values (, unless otherwise specified) min. typ. max. BS = 75µA = V 6 V (th) = 25 µa, = 2.5 5. V ES =.8 S 5 µa = V 8 ma TO-247 AD G C E G = Gate, E = Emitter, C (TAB) C = Collector, TAB = Collector Features International standard packages JEDEC TO-247 SMD High frequency IGBT and antiparallel FRED in one package High current handling capability Newest generation HDMOS TM process MOS Gate turn-on - drive simplicity Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages Space savings (two devices in one package) High power density Very fast switching speeds for high frequency applications I GES = V = ±2 V ± na (sat) = 9 = 5 V 2. V 2 IXYS All rights reserved DS95567C(2/)
IXGH2N6BU Symbol Test Conditions Characteristic Values (, unless otherwise specified) min. typ. max. g fs = 9 ; = V, 5 25 S Pulse test, t µs, duty cycle 2 % C ies 27 pf C oes = 25 V = V, f = MHz 27 pf C res 5 pf Q G 5 nc Q GE = 9 = 5 V, =.5 S 2 5 nc Q GC 4 75 nc t d(on) Inductive load, 25 ns t I ri C = 9 = 5 V, L = µh, 2 ns V t CE =.8 S, R G = R off = 4.7 Ω d(off) 2 ns Remarks: Switching times may t fi 8 5 ns increase for (Clamp) >.8 S, E off higher or increased R G.6.2 mj t d(on) 25 ns Inductive load, t ri 25 ns = 9 = 5 V, L = µh E on mj =.8 S, R G = R off = 4.7 Ω t d(off) 2 ns Remarks: Switching times may t fi increase for (Clamp) >.8 S, 2 ns E off higher or increased R G.2 mj TO-247 AD Outline P e Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5..85.29 A 2.2 2.54.87.2 A 2 2.2 2.6.59.98 b..4.4.55 b.65 2..65.84 b 2 2.87.2..2 C.4.8.6. D 2.8 2.46.89.845 E 5.75 6.26.6.64 e 5.2 5.72.25.225 L 9.8 2.2.78.8 L 4.5.77 P.55.65.4.44 Q 5.89 6.4.22.252 R 4.2 5.49.7.26 S 6.5 BSC 242 BSC R thjc.62 K/W R thck.25 K/W Reverse Diode (FRED) Characteristic Values (, unless otherwise specified) Symbol Test Conditions min. typ. max. V F = 9 = V,.6 V Pulse test, t µs, duty cycle d 2 % I RM = 9 = V, - /dt = 24 A/µs 5 A t rr = 6 V 5 ns = A; -di/dt = A/µs; = V 5 5 ns K/W R thjc IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,85,592 4,88,6 5,7,58 5,49,96 5,87,7 5,486,75 6,6,728B 4,85,72 4,9,844 5,4,796 5,6,7 5,27,48 5,8,25
IXGH2N6BU - Amperes 8 6 4 = 5V V V 9V 7V - Amperes 2 6 2 8 = 5V V V 9V 7V 2 4 5V 5V 2 4 5 6 7 2 4 6 8 Fig.. Saturation Voltage Characteristics Fig. 2. Extended Output Characteristics.75 - Amperes 8 6 4 2 (sat) - Normalized.5.25. = 5V = 64A = 2A = 6A 2 4 5 6 7 Fig.. Saturation Voltage Characteristics.75 25 5 75 25 5 - Degrees C Fig. 4. Temperature Dependence of (sat) - Amperes 8 6 4 2 V = V CE BV/(th) - Normalized.5..5..95.9.85.8.75 BS = 25µA (th) = 25µA 4 5 6 7 8 9.7-5 -25 25 5 75 25 5 Fig. 5. Admittance Curves G2N6B P - Degrees C Fig. 6. Temperature Dependence of BV DSS & (th) 2 IXYS All rights reserved
IXGH2N6BU E (ON) - millijoules 2.5 2..5..5 R G = Ω E (ON) E (OFF) 5 4 2 E(OFF) - millijoules E (ON) - millijoules 2.5 2..5..5 = 2A E (ON) E (OFF) 5 4 2 E(OFF) - millijoules. 2 4 6 8 - Amperes Fig. 7. Dependence of tfi and E OFF on.. 2 4 5 6 R G - Ohms Fig. 8. Dependence of tfi and E OFF on R G. 5 = 2A 2 = V 9 6 - Amperes R G = 4.7Ω dv/dt < 5V/ns 25 5 75 25 5 Q g - nanocoulombs Fig. 9. Gate Charge. 2 4 5 6 Fig.. Turn-off Safe Operating Area D=.5 Z thjc (K/W).. D=.2 D=. D=.5 D=.2 D=. D = Duty Cycle Single pulse...... Pulse Width - Seconds Fig.. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,85,592 4,88,6 5,7,58 5,49,96 5,87,7 5,486,75 6,6,728B 4,85,72 4,9,844 5,4,796 5,6,7 5,27,48 5,8,25
IXGH2N6BU Fig.2 Maximum Forward Voltage Drop Fig. Peak Forward Voltage V FR and Forward Recovery Time t FR Current - Amperes 8 6 4 2 = 5 C = C V FR 25 2 5 5 = 7A V FR 8 6 4 2 t fr - nanoseconds t fr.5..5 2. 2.5 Voltage Drop Fig.4 Junction Temperature Dependence 2 4 5 6 Fig.5 Reverse Recovery Chargee off I RM and Q r Normalized I RM /Q r.4.2..8.6.4.2 I RM Q r Q r - nanocoulombs 4 2 = C = 5V typ. = 6A = A = 5A = A max.. 4 8 2 6 - Degrees C Fig.6 Peak Reverse Recovery Current Fig.7 Reverse Recovery Time I RM - Amperes 4 2 = C = 5V typ. = 6A = A = 5A = A max. t rr - nanoseconds.8.6.4.2 = A max. typ. = 6A = A = 5A = C = 5V 2 4 6. 2 4 6 2 IXYS All rights reserved
IXGH2N6BU Fig.8 Diode Transient Thermal resistance junction to case. R thjc - K/W..... Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,85,592 4,88,6 5,7,58 5,49,96 5,87,7 5,486,75 6,6,728B 4,85,72 4,9,844 5,4,796 5,6,7 5,27,48 5,8,25