FDB886 N-Channel Logic Level PowerTrench MOSFET 3V, 8A, 2.6mΩ Features R DS(ON) =.9mΩ (Typ), V GS = 5V, I D = 8A Q g(5) = 89nC (Typ), V GS = 5V Low Miller Charge Low Q RR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant Applications DC-DC Converters December 2 FDB886 Rev A2
MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage 3 V V GS Gate to Source Voltage ±2 V Drain Current Continuous (V GS = V, T C < 63 o C) 8 A I D Continuous (V GS = 5V, T C < 62 o C) 8 A Continuous (V GS = V, T C = 25 o C, with R θja = 43 o C/W) 3 A Pulsed Figure 4 A E AS Single Pulse Avalanche Energy (Note ) 947 mj Power Dissipation 254 W P D Derate above 25 o C.7 W/ o C T J, T STG Operating and Storage Temperature -55 to +75 o C Thermal Characteristics R θjc Thermal Resistance Junction to Case.59 o C/W R θja Thermal Resistance Junction to Ambient (Note 2) 62 o C/W R θja Thermal Resistance Junction to Ambient TO-263,in 2 copper pad area 43 o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB886 FDB886 TO-263AB 33mm 24mm 8units Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = ma, V GS = V 3 - - V V I DSS Zero Gate Voltage Drain Current DS = 24V - - μa V GS = V T J = 5 C - - 25 I GSS Gate to Source Leakage Current V GS = ±2V - - ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V DS = V GS, I D = 25μA.7 3 V R DS(ON) Drain to Source On Resistance Dynamic Characteristics I D = 8A, V GS = V -.6 2.3 I D = 8A, V GS = 5V -.9 2.6 I D = 8A, V GS = 4.5V - 2. 2.7 I D = 8A, V GS = V, T J = 75 C - 2.5 3.6 C ISS Input Capacitance - 946 2585 pf V DS = 5V, V GS = V, C OSS Output Capacitance - 7 2275 pf f = MHz C RSS Reverse Transfer Capacitance - 5 575 pf R G Gate Resistance f = MHz -.8 - Ω Q g(tot) Total Gate Charge at V V GS = V to V - 65 24 nc Q g(5) Total Gate Charge at 5V V GS = V to 5V - 89 5 nc V DD = 5V Q g(th) Threshold Gate Charge V GS = V to V - 9. 2 nc I D = 8A Q gs Gate to Source Gate Charge - 26 - nc I g =.ma Q gs2 Gate Charge Threshold to Plateau - 8 - nc Q gd Gate to Drain Miller Charge - 33 - nc mω 2
Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t (on) Turn-On Time - - 34 ns t d(on) Turn-On Delay Time - 4 - ns t r Turn-On Rise Time V DD = 5V, I D = 8A - 23 - ns t d(off) Turn-Off Delay Time V GS = 5V, R GS = Ω - 79 - ns t f Turn-Off Fall Time - 49 - ns t off Turn-Off Time - - 92 ns Drain-Source Diode Characteristics V SD Source to Drain Diode Voltage I SD = 8A - -.25 V I SD = 4A - -. V t rr Reverse Recovery Time I SD = 8A, di SD /dt = A/μs - - 43 ns Q rr Reverse Recovery Charge I SD = 8A, di SD /dt = A/μs - - 29 nc Notes: : Starting T J = 25 o C, L =.47mH, I AS = 64A, V DD = 3V, V GS = V. 2: Pulse width = s 3
Typical Characteristics T J = 25 C unless otherwise noted POWER DISSIPATION MULIPLIER.2..8.6.4.2. 25 5 75 25 5 75 T C, CASE TEMPERATURE( o C) Figure. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE ZθJA 2. DUTY CYCLE-DESCENDING ORDER D =.5.2..5.2. SINGLE PULSE ID, DRAIN CURRENT (A) 3 225 5 75 V GS = 5V V GS = V CURRENT LIMITED BY PACKAGE 25 5 75 25 5 75 T C, CASE TEMPERATURE ( o C) Figure 2. Maximum Continuous Drain Current vs Case Temperature P DM t t 2 NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θjc x R θjc + T C. -5-4 -3-2 - t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance I (PK), PEAK CURRENT (A) 3 SINGLE PULSE T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 75 - T C 25 5 5-5 -4-3 -2 - t, PULSE WIDTH (s) Figure 4. Peak Current Capability 4
Typical Characteristics T J = 25 C unless otherwise noted ID, DRAIN CURRENT(A) us us ms ms ms DC Figure 5. Forward Bias Safe Operating Area ID, DRAIN CURRENT (A) OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) SINGLE PULSE T J = MAX RATED T C = 25 o C. V DS, DRAIN TO SOURCE VOLTAGE(V) 6 2 8 4 CURRENT LIMITED BY PACKAGE PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V DD = 5V T J = 75 o C T J = 25 o C T J = -55 o C..5 2. 2.5 3. 3.5 V GS, GATE TO SOURCE VOLTAGE (V) 6 IAS, AVALANCHE CURRENT (A) 5 If R = t AV = (L)(I AS )/(.3*RATED BV DSS - V DD ) If R t AV = (L/R)ln[(I AS *R)/(.3*RATED BV DSS - V DD ) +] STARTING T J = 5 o C STARTING T J = 25 o C. t AV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN754 and AN755 Figure 6. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 2 8 6 4 V GS = 4V V GS = 5V V GS = V V GS = 3V 2 PULSE DURATION = 8μs DUTY CYCLE =.5% MAX..2.4.6.8. V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (mω) 4. 3.5 3. 2.5 2. I D = 4A PULSE DURATION = 8μs DUTY CYCLE=.5% MAX T J = 75 o C T J = 25 o C.5 3 4 5 6 7 8 9 V GS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE.6.4.2..8 PULSE DURATION = 8μs DUTY CYCLE =.5% MAX ID = 8A VGS = V.6-8 -4 4 8 2 6 2 T J, JUNCTION TEMPERATURE( O C) Figure. Normalized Drain to Source On Resistance vs Junction Temperature 5
Typical Characteristics T J = 25 C unless otherwise noted NORMALIZED GATE THRESHOLD VOLTAGE Figure. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pf).4.2..8.6.4.2-8 -4 4 8 2 6 2 T J, JUNCTION TEMPERATURE( oc) 2 f = MHz V GS = V C iss C oss C rss V GS = V DS I D = 25μA 5. V DS, DRAIN TO SOURCE VOLTAGE (V) 3 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE..5..95 I D = ma.9-8 -4 4 8 2 6 2 T J, JUNCTION TEMPERATURE( o C) Figure 2. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 8 6 4 2 V DD = 5V 2 4 6 8 2 4 6 8 Q g, GATE CHARGE (nc) I D = 8A I D = A Figure 3. Capacitance vs Drain to Source Voltage Figure 4. Gate Charge vs Gate to Source Voltage 6
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Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I5 7