VRF48A VRF48AMP 5V, 3W, 75MHz RF POWER VERTICAL MOSFET The VRF48A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES Improved Ruggedness V (BR)DSS = 7 V 3W with Typical Gain @ 3MHz, 5V 3W with 6 Typical Gain @ 75MHz, 5V Excellent Stability & Low IMD Common Source Configuration Available in Matched Pairs 3: Load VSWR Capability at Specified Operating Conditions Nitride Passivated Refractory Gold Metallization High Voltage Replacement for MRF48A RoHS Compliant Maximum Ratings All Ratings: T C =25 C unless otherwise specified Symbol Parameter VRF48A(MP) Unit V DSS Drain-Source Voltage 7 V Continuous Drain Current @ T C = 25 C 6 A V GS Gate-Source Voltage ±4 V P D Total Device dissipation @ T C = 25 C 5 W T STG Storage Temperature Range -65 to 5 Operating Junction Temperature C Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V (BR)DSS Drain-Source Breakdown Voltage (V GS = V, = ma) 7 V DS(ON) On State Drain Voltage ((ON) = 2.5A, V GS = V) 3. 5. V SS Zero Gate Voltage Drain Current (V DS = V, V GS = V). ma I GSS Gate-Source Leakage Current (V DS = ±V, V DS = V). μa g fs Forward Transconductance (V DS = V, = 2.5A).8 mhos V GS(TH) Gate Threshold Voltage (V DS = V, = ma) 2.9 3.6 4.4 V Thermal Characteristics Symbol Characteristic Min Typ Max Unit R θjc Junction to Case Thermal Resistance.52 C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 5-4943 Rev C 9-
Dynamic Characteristics VRF48A(MP) Symbol Parameter Test Conditions Min Typ Max Unit C ISS Input Capacitance V GS = V 6 C oss Output Capacitance V DS = 5V 4 pf C rss Reverse Transfer Capacitance f = MHz 2.6 Functional Characteristics Symbol Parameter Min Typ Max Unit G PS = 3MHz, V DD = ma, = 3W 8 G PS = 75MHz, V DD = ma, = 3W 6 η = ma, 3 W PEP 4 η = 3MHz, V DD = ma, 3 W CW 5 % IMD (d3) = ma, = 3W PEP -35-28 IMD (d) = ma, = 3W PEP -6 ψ = 3.MHz,V DD = ma, = 3W PEP 3: VSWR - All Phase Angles No Degradation in Output Power Class A Characteristics Symbol Test Conditions Min Typ Max Unit G PS =.A, = W PEP IMD (d3) =.A, = W PEP -5 IMD (d9-d3) =.A, = W PEP -7. To MIL-STD-3 Version A, test method 24B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves, DRAIN CURRENT (A) 6 5 4 3 4V 5 5 25 V, DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE, Output Characteristics 3V V 9V 8V 7V 6V 5V, DRAIN CURRENT (A) 8 6 4 2 8 6 4 2 2 4 6 8 V GS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 25μs PULSE TEST<.5 % DUTY CYCLE = -55 C = 25 C = 25 C C iss Max Pdmax 5-4943 Rev C 9- C, CAPACITANCE (pf) C oss C rss 3 4 5 6 V DS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage, DRAIN CURRENT (V) = 25 C T C = 75 C R ds(on). V DS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area
Typical Performance Curves VRF48A(MP).6 Z θjc, THERMAL IMPEDANCE ( C/W).4.2..8.6.4.2 Duty Factor D = t /t 2 Peak = P DM x Z θjc + T C -5-4 -3-2. RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration Note: P DM t t 2 t = Pulse Duration IMD, INTERMODULATION DISTORTION () 3 35 4 45 Vdd=28V, Idq = 25mA, Freq=3MHz IM3 IM5 5 3 4, OUTPUT POWER (WATTS PEP) Figure 6. IMD versus P OUT IMD, INTERMODULATION DISTORTION () 3 35 4 45 Vdd=28V, Idq = 25mA, Freq=75MHz IM3 IM5 5 3 4, OUTPUT POWER (WATTS PEP) Figure 7. IMD versus P OUT 6 5 Vdd=28V, Idq = 25mA, Freq=3MHz 6 5 Vdd=28V, Idq = 25mA, Freq=75MHz OUTPUT POWER (W PEP ) 4 3 OUTPUT POWER (W PEP ) 4 3 2 3 4 5, INPUT POWER (WATTS PEP) Figure 8. P IN versus P OUT.5.5 2 2.5, INPUT POWER (WATTS PEP) Figure 9. P IN versus P OUT 5-4943 Rev C 9-
3 MHz test circuit VRF48A(MP) 75 MHz test circuit 5-4943 Rev C 9-
VRF48A(MP) Adding MP at the end of P/N specifi es a matched pair where V GS(TH) is matched between the two parts. V TH values are marked on the devices per the following table. Code Vth Range Code 2 Vth Range A 2.9-2.975 M 3.65-3.725 B 2.975-3.5 N 3.725-3.8 C 3.5-3.25 P 3.8-3.875 D 3.25-3. R 3.875-3.95 E 3. - 3.275 S 3.95-4.25 F 3.275-3.35 T 4.25-4. G 3.35-3.425 W 4. - 4.75 H 3.425-3.5 X 4.75-4.25 J 3.5-3.575 Y 4.25-4.325 K 3.575-3.65 Z 4.325-4.4 V TH values are based on Microsemi measurements at datasheet conditions with an accuracy o.%. M3 Package Outline.375 SOE All Dimensions to be ±.5 PIN - SOURCE PIN 2 - GATE PIN 3 - SOURCE PIN 4 - DRAIN H Q J S 2 K A U M 4 3 D E M R C B INCHES MILLIMETERS DIM MIN MAX MIN MAX A.96.99 24.39 25.4 B.37.39 9.4 9.9 C.229.28 5.82 7.3 D.25.235 5.47 5.96 E.85.5 2.6 2.66 H.5.8 3.8 4.57 J.4.6..5 K.395.45.4.28 M 4 5 4 5 Q.3.3 2.88 3.3 R.245.255 6.23 6.47 S.79.8.7.57 U.7.73 8.29 8.54 Microsemi s products are covered by one or more of U.S. patents 4,895,8 5,45,93 5,89,434 5,82,234 5,9,522 5,262,336 6,53,786 5,256,583 4,748,3 5,283,2 5,23,474 5,434,95 5,528,58 6,939,743, 7,352,45 5,283, 5,8,47 5,648,283 7,96,634 6,664,594 7,57,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. 5-4943 Rev C 9-