TND027SW. Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDS 60 V Output Current IO(DC) 1.5 A Input Voltage VIN --0.

Similar documents
TND027MP. SANYO Semiconductors DATA SHEET TND027MP. Features. Specifications Absolute Maximum Ratings at Ta=25 C

TND314S. Monolithic structure (High voltage CMOS process adopted) Withstand voltage of 25V is assured

2SB1201/2SD Marking Packing Type (TP-FA) : TL Electrical Connection (TP, TP-FA)

2SA1593/2SC4135. SANYO Semiconductors DATA SHEET 2SA1593/2SC4135. Applications. Specifications ( ): 2SA1593

2SB1202/2SD Marking (TP, TP-FA) Packing Type (TP-FA) : TL Electrical Connection

LB1938T. Specifications. Monolithic Digital IC 1ch, Low-saturation Forward/Reverse Motor Driver. Absolute Maximum Ratings at Ta = 25 C

2SK4124. SANYO Semiconductors DATA SHEET 2SK4124. Features. Specifications. N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Parameter Symbol Conditions Ratings Unit

2SK4192LS. SANYO Semiconductors DATA SHEET 2SK4192LS. Features. Specifications. N-Channel Silicon MOSFET General-Purpose Switching Device Applications

2SK4086LS. Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGSS ±30 V

Pin 6 sink current. Pin 7 sink current

Overview The STK E is a hybrid IC for use in current control forward/reverse DC motor driver with brush.

Overview LA42351 is 5W 1-channel AF power amplifier with DC volume control intended for televisions. Volume

LV51140T. Features High accuracy detection voltage Over-charge detection ±25mV Over-charge hysteresis. Specifications

2SA2099 / 2SC5888. Collector Dissipation Tc=25 C 25 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C

Overview The STK E is a hybrid IC for use in current control forward/reverse DC motor driver with brush.

LV8860V. Specifications Maximum Ratings at Ta = 25 C. Bi-CMOS IC Fan Motor Driver Single-Phase Full-Wave Driver. Ordering number : ENA1818A

LA4631. Functions 2-channel power amplifier for audio applications. Specifications

Parameter Symbol Conditions Ratings Unit Supply voltage V IN max 45 V. V IN, SW 45 V HDRV, CBOOT 52 V LDRV 6.0 V Between CBOOT to SW

Excellent Power Device Dual inverter driver for general purpose, Dual SOIC8

Excellent Power Device Dual buffer driver for general purpose, Dual SOIC8

Monolithic Linear IC Audio Output for TV application 5W 2ch Power Amplifier

Compact package: MFP8 (200mil) with Exposed Pad Overshoot control function

Monolithic Linear IC Audio Output for TV application 5W 2ch Power Amplifier

Monolithic Linear IC Audio Output for TV application 5W 2ch Power Amplifier

LA4629. Specifications. Monolithic Linear IC 2-channel AF Power Amplifier. Maximum Ratings at Ta = 25 C. Operating Conditions at Ta = 25 C

LV5876MX. Specifications Maximum Ratings at Ta = 25 C. Bi-CMOS IC Step-down Switching Regulator

Over-current protection Wide input dynamic range (4.75V to 18V)

LV4992TT. Bi-CMOS IC For Portable Audio Equipment Stereo SE Power Amplifier

LV4912GP. Class-D Audio Power Amplifier BTL 2W 1ch

Monolithic Linear IC For Car Stereo 2-Channel Preamplifier

STK A-E. Applications Air conditioner three-phase compressor motor driver.

MCH6644 MCH6644. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company

2SJ616. unit : mm 2062A

Monolithic Linear IC For TV Audio/Video Switch

CPH6315. unit : mm 2151A

FW342. Mounted on a ceramic board (1500mm 2 0.8mm)1unit, PW 10s. Mounted on a ceramic board (1500mm 2 0.8mm), PW 10s

SANYO Semiconductors. Bip integrated circuit. Constant Voltage Drive Stepping Motor Driver

Applications Single-phase rectification active filter for power rectification for air conditioners and general-purpose inverters.

Applications Mini radio cassette players/recorders, portable radios, transceivers and other portable audio devices

NCE3415Y. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V

unit : mm When using standard board (material: glass epoxy)

Device Marking Device Device Package Reel Size Tape width Quantity A2SHB HM2302A SOT-23 Ø180mm 8 mm 3000 units. Parameter Symbol Limit Unit

High power and current handing capability Lead free product is acquired Surface mount package SOT-23-6L top view

Battery protection Load switch Power management SOT23-6L top view

2SK3815 2SK3815. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company

Device Marking Device Device Package Reel Size Tape width Quantity 8205A HM8205A TSSOP-8 Ø330mm 12mm 3000 units. Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity HM4812 HM4812 SOP-8 Ø180mm 8 mm 3000 units. Parameter Symbol Limit Unit

High power and current handing capability Lead free product is acquired Surface mount package Marking and pin assignment

Device Marking Device Device Package Reel Size Tape width Quantity 6003 NCE6003Y SOT-23-3L Ø180mm 8 mm 3000 units

When mounted on a glass epoxy circuit board (reference value): mm 76.1 mm 1.6 mm

SOT-23. Symbol Characterizes Typ. Max. Units R θja Junction-to-ambient (t 10s) C /W

Device Marking Device Device Package Reel Size Tape width Quantity 30P12 NCE30P12S SOP-8 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit

CPH6354. Power MOSFET 60V, 100mΩ, 4A, Single P-Channel. Features. Specifications

EMH1307. P-Channel Power MOSFET 20V, 6.5A, 26mΩ, Single EMH8. Features. Specifications. Input Capacitance Ciss=1100pF(typ.) Halogen free compliance

Device Marking Device Device Package Reel Size Tape width Quantity HM4485B HM4485B SOP-8 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity 30P25 NCE30P25S SOP-8 Ø330mm 12mm 2500 units

NCE40P06J. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

NCE6012AS. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

SSF2449. GENERAL FEATURES VDS = -20V,ID =-5A RDS(ON) < Application PWM applications Load switch Power management

LA Overview. Monolithic Linear IC 5W 2-Channel AF Power Amplifier With DC Volume Control

Device Marking Device Device Package Reel Size Tape width Quantity 0102 NCE0102 SOT-23 Ø180mm 8 mm 3000 units

Device Marking Device Device Package Reel Size Tape width Quantity HM5P55R HM5P55R SOT-223 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit

Protection diode in Halogen free compliance

Device Marking Device Device Package Reel Size Tape width Quantity NCEP8818AS NCEP8818AS SOP-8 Ø330mm 12mm 2500 units

ECH8663R. N-Channel Power MOSFET 30V, 8A, 20.5mΩ, Dual ECH8. Features. Specifications

Device Marking Device Device Package Reel Size Tape width Quantity NCEP4085EG NCEP4085EG DFN5X6-8L - - -

Device Marking Device Device Package Reel Size Tape width Quantity NCE82H110D NCE82H110D TO-263-2L - - -

EMH2604. Power MOSFET 20V, 4A, 45mΩ, 20V, 3A, 85mΩ, Complementary Dual EMH8. Features. Specifications

Fully compatible input to LSTTL/CMOS Withstand voltage of 600V is assured. Output current: 170mA Source, 340mA Sink High-speed switching

Device Marking Device Device Package Reel Size Tape width Quantity NCE4606 SOP-8 Ø330mm 12mm 2500 units

V DS =60V,I D =20A R DS(ON) V GS =10V Schematic diagram

Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment

3LP01SS. P-Channel Small Signal MOSFET 30V, 0.1A, 10.4Ω, Single SSFP. Features. Specifications. Low ON-resistance High-speed switching 2.

Device Marking Device Device Package Reel Size Tape width Quantity NCE30P50G NCE30P50G DFN 5x6 EP - - -

LV5694P. Monolithic Linear IC For Car Audio Systems Multi-Power Supply System IC

V DS =30V,I D =35A R DS(ON) < V GS =10V R DS(ON) < V GS =4.5V Schematic diagram

Device Marking Device Device Package Reel Size Tape width Quantity HM60N08 HM60N08 TO-220-3L - - Parameter Symbol Limit Unit

SSF8205A. GENERAL FEATURES VDS =20V,ID =6A RDS(ON) < Application Battery protection Load switch Power management

Allowable Power Dissipation Tc=25 C 23 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C

CPH3910. N-Channel JFET 25V, 20 to 40mA, 40mS, CPH3. Applications. Features. Specifications. For AM tuner RF amplification Low noise amplifier

30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET

Overview The LA6560 is a 5-channel driver (BTL : 4-channel, H bridge : 1-channel) for CD players.

Applications Power rectification for air conditioners and general-purpose inverters as a single-phase rectification active converter.

Bi-CMOS LSI For Car Audio Systems

LA4708N. Monolithic Linear IC For Car Stereos 20W 2-channel BTL AF Power Amplifier. Ordering number : ENA1783

Device Marking Device Device Package Reel Size Tape width Quantity NCE85H21T NCE85H21T TO Parameter Symbol Limit Unit

NCE0208IA. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

Bi-CMOS IC For Brushless Motor Drive PWM Driver IC

Device Marking Device Device Package Reel Size Tape width Quantity NCE01P13K NCE01P13K TO-252-2L Parameter Symbol Limit Unit

PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity

Device Marking Device Device Package Reel Size Tape width Quantity HM4884A HM4884A SOP Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity NCE6990 NCE6990 TO unless otherwise noted)

NCE0250D. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

Device Marking Device Device Package Reel Size Tape width Quantity NCE30H21 NCE30H21 TO Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity NCE01P30 NCE01P30 TO-220-3L Parameter Symbol Limit Unit

NCE40P13S. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications

3LP01S. P-Channel Small Signal MOSFET 30V, 0.1A, 10.4Ω, Single SMCP. Features. Specifications. Low ON-resistance Ultrahigh-speed switching 2.

Transcription:

Ordering number : EN7437D SANYO Semiconductors DATA SHEET Features N-channel MOSFET built in Halogen free compliance Overheat protection (Self recovery type) Overcurrent protection (Self recovery type current limiting function) Overvoltage protection Incorporates two sets of circuit Specifications Absolute Maximum Ratings at Ta=25 C ExPD(Excellent Power Device) Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving Applications Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDS 6 V Output Current IO(DC) 1.5 A Input Voltage VIN --.3 to +1 V Allowable Power Dissipation PD When mounted on ceramic substrate (12mm 2.mm) 1unit 1.3 W When mounted on ceramic substrate (12mm 2.mm) 1.7 W Operating Supply Voltage VDS(opr) 4 V Operating Temperature Topr --4 to +5 C Junction Temperature Tj 15 C Storage Temperature Tstg --55 to +15 C Package Dimensions unit : mm (typ) 772-3 4.9 5.22 -TL-2H Product & Package Information Package : SOIC JEITA, JEDEC : SC-7, SOT-96 Minimum Packing Quantity : 2,5 pcs./reel Packing Type: TL Marking 6. 3.9 1.375 1 4 7.445.254 (GAGE PLANE).175 1.55.375.715 1 : GND1 2 : IN1 3 : GND2 4 : IN2 5 : OUT2 6 : OUT2 7 : OUT1 : OUT1 SANYO : SOIC IN ESD protective circuit TL Block Diagram Overheat protective circuit Output current control Overcurrent protective circuit TND 27 LOT No. Gate shutdown circuit Overvoltage protective circuit OUT(D) GND(S) http://www.sanyosemi.com/en/network/ D512 TKIM TC-232/O2611 TKIM/D267IP TIIM TC-1114/O223 TSIM/5153 TSIM TA-1479 No.7437-1/9

Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min. typ. max. Drain-to-Source Clamp Voltage VDS, clamp VIN=V, IO=1mA 6 V Output-OFF Current IDSS1 VIN=V, VDS=5V 1 μa IDSS2 VIN=V, VDS=12V 5 μa Input Threshold Voltage VIN(th) VDS=5V, IO=1mA 1. 1.5 2. V Protection Circuit Operating Input Voltage VIN(opr) 4 1 V Drain-to-Source ON Resistance RDS(on) VIN=5V, IO=1A.3.4 Ω Input Current (Output On) IIN VIN=5V.6 ma Over-Heat Detecting Temperature Tj(sd) VIN=5V, IO=1A 12 15 19 C Over-Current Detecting Current Is VIN=5V 3. 6. 9. A Over-Current Limit (Peak) ILMT VIN=5V 3. 6. 9. A Input Clamp Voltage VIN, clamp IIN=1mA 1 V Notes : 1. Overcurrent protection circuit limits the output current to the range of overcurrent limit value. 2. During overheat protecting operation, output current is turned off. Ordering Information Devices Package Shipping memo -TL-2H SOIC 2,5pcs./reel Pb Free and Halogen Free.5 RDS(on) -- Ta RDS(on) -- VIN 1. I O =1A I O =1A Drain-to-Source ON Resistance, R DS (on) -- Ω.4.3.2.1 4V 5V 6V Drain-to-Source ON Resistance, R DS (on) -- Ω..6.4.2 Ta=5 C 25 C --4 C --5 --25.12.1 25 5 75 1 Ambient Temperature, Ta -- C IIN -- Ta IT5233 V IN =5V 2 4 6 1 12 IT5234 IIN -- VIN Ta=25 C Input Current, I IN -- ma..6.4 Input Current, I IN -- ma 1...6.4 I IN (abnormal).2 --5 --25 25 5 75 1 Ambient Temperature, Ta -- C IT5235.2 IIN(normal) 2 4 6 1 IT5236 No.7437-2/9

9 IS -- Ta 9 IS -- VIN Ta=25 C Overcurrent Detecting Current, I S -- A Overcurrent Limit, I LMT -- A 7 6 5 4 3 --5 --25 9 7 6 5 4 6V 5V 4V 25 5 75 1 Ambient Temperature, Ta -- C IT5237 ILMT -- Ta 6V 5V 4V Overcurrent Limit, I LMT -- A Overcurrent Detecting Current, I S -- A 7 6 5 4 3 4 5 6 7 9 1 IT523 12 1 6 4 2 ILMT -- VIN Ta=25 C Drain-to-Source Clamp Voltage, V DS, Clamp -- V Threshold Voltage, V IN (th) -- V 3 --5 --25 7 6 66 64 62 6 5 56 --5 --25 2. 1. 1.6 1. 25 5 75 1 Ambient Temperature, Ta -- C VDS, clamp -- Ta IT5239 V IN =V I O =1mA Input Clamp Voltage, V IN, Clamp -- V 1...6.4.2 VIN, clamp -- Ta 25 5 75 1 --5 --25 25 5 75 1 Ambient Temperature, Ta -- C IT5241 Ambient Temperature, Ta -- C IT5242 VIN(th) -- Ta IO -- VIN 2. V DS =5V V DS =24V I O =1mA 1. 1.6 Output Current, I O -- A 4 5 6 7 9 1 13 12 11 1 9 Ta=5 C --4 C 25 C IT524 I IN =1mA. --5 --25 25 5 75 1 Ambient Temperature, Ta -- C IT5243 1 2 3 IT5244 No.7437-3/9

-- C 16 15 Tj(sd) -- VIN Overheat Detecting Temperature, Tj(sd) Allowable Power Dissipation, P D (Circuit2) -- W 156 154 152 15 14 146 144 142 14 4. 4.5 5. 5.5 6. IT5245 1.3 1...6.4.2 PD(Circuit2) -- PD(Circuit1) When mounted on ceramic substrate (12mm 2.mm) PD -- Ta.5 1. 1.3 1.5 --4 --2 2 4 6 1 Allowable Power Dissipation, P D (Circuit1) -- W IT5247 Ambient Temperature, Ta -- C IT524 Allowable Power Dissipation, P D -- W 1. 1.7 1.6 1.3 1...6.4.2 Total Dissipation 1unit Sample Application Circuit AC24V AC1V Lamp Lamp Lamp OUT GND OUT 1 OUT 2 IN Microcontrollecontroller 5V 5V Micro- IN 1 IN 2 GND 1, 2 Microcontroller 5V Another Sample Application Circuit (Solenoid drive) AC24V AC1V Solenoid Solenoid OUT OUT 1 OUT 2 IN 2 IN Microcontroller 5V 5V Microcontroller IN 1 Microcontroller 5V GND GND 1, 2 No.7437-4/9

Operation Description The output power MOSFET will be turned on when the input voltage exceeds the input threshold voltage (4 to 6V is recommended), and then the lamp will be turned on by the current flowing to the lamp. Conversely, the output power MOSFET will be turned off when the input voltage goes below the input threshold voltage, and the lamp will be turned off. The inrush current that occurs during normal lamp operation is limited to a preset value by the built-in overcurrent protecting circuit, which makes the lamp life longer. The internal overcurrent protection function limits the current of output power MOSFET when output current of at least the overcurrent detecting current value flows at load short. Besides, if the device temperature exceeds the allowable power dissipation, overheat protection function protects the power switch from being broken down by turning off the current of output power MOSFET when Tj comes to 15 C (typical). As an example of application circuit, DC voltage can also be controlled as a solenoid drive. Addition The diode between OUT and GND in the block diagram is parasitic diode of the MOSFET. Not apply a voltage on IN terminal during the period when OUT voltage is lower then GND voltage when driving a solenoid or a motor. Be sure connect a diode between OUT terminal and GND terminal when you want to apply a voltage on IN terminal under the above-stated state (that is, OUT Voltage < GND Voltage). No.7437-5/9

Taping Specification -TL-2H No.7437-6/9

Feed D i rec t ion No.7437-7/9

Outline Drawing -TL-2H Land Pattern Example Mass (g) Unit Unit: mm.2 * For reference mm.65 5.6 1.75 7 No.7437-/9

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc., please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 212. Specifications and information herein are subject to change without notice. PS No.7437-9/9