FGHT65SPD-F5 65V, A Field Stop Trench IGBT Features AEC-Q Qualified Low Saturation Voltage : V CE(sat) =.5 V(Typ.) @ I C = A % of the parts are dynamically tested (Note ) Short Circuit Ruggedness > 5 μs @ 25 o C Maximum Junction Temperature : T J = 75 o C Fast Switching Tight Parameter Distribution Positive Temperature Co-efficient for Easy Parallel Operating Copacked with soft, fast recovery diode RoHS Compliant E C G General Description Using the novel field stop 3rd generation IGBT technology, FGHT65SPD-F5 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 5V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation. Applications Onboard Charger AirCon Compressor PTC Heater Motor Drivers Other automotive power-train appliactions C FGHT65SPD-F5 65V A Field Stop Trench IGBT G Absolute Maximum Ratings COLLECTOR (FLANGE) Symbol Description Ratings Units V CES Collector to Emitter Voltage 65 V V GES Gate to Emitter Voltage ± 2 V Transient Gate to Emitter Voltage ± 3 V I C Collector Current @ A Collector Current @ = o C A I CM Pulsed Collector Current (Note 2) 2 A I F Diode Forward Current @ = o C 2 A Diode Forward Current @ A I FM Pulsed Diode Maximum Forward Current (Note 2) 2 A P D Maximum Power Dissipation @ = o C 3 W Maximum Power Dissipation @ 267 W SCWT Short Circuit Withstand Time @ 5 μs T J Operating Junction Temperature -55 to +75 o C T stg Storage Temperature Range -55 to +75 o C T L Maximum Lead Temp. for soldering Purposes, / from case for 5 seconds 3 o C Notes: : V CC = V, V GE = 5 V, I C = 2 A, R G = 2 Ω, Inductive Load 2: Repetitive rating: pulse width limited by max. junction temperature E 26 Semiconductor Components Industries, LLC. August-27, Rev. 2 Publication Order Number: FGHT65SPD-F5/D
Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction to Case -.56 R θjc (Diode) Thermal Resistance, Junction to Case -.7 o C/W R θja Thermal Resistance, Junction to Ambient - o C/W Package Marking and Ordering Information Device Marking Device Package Pacing Type Qty per Tube FGHT65SPD FGHT65SPD-F5 TO-27 G3 Tube 3ea Electrical Characteristics of the IGBT = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = V, I C = ma 65 - - V ΔBV CES ΔT J Temperature Coefficient of Breakdown Voltage o C/W V GE = V, I C = ma -.6 - V/ o C I CES Collector Cut-Off Current V CE = V CES, V GE = V - - 25 μa I GES G-E Leakage Current V GE = V GES, V CE = V - - ± na On Characteristics V GE(th) G-E Threshold Voltage I C = ma, V CE = V GE. 5.5 7.5 V I C = A, V GE = 5V -.5 2. V V CE(sat) Collector to Emitter Saturation Voltage I C = A, V GE = 5V, - 2.5 - V FGHT65SPD-F5 65V A Field Stop Trench IGBT Dynamic Characteristics C ies Input Capacitance - 5 - pf C oes Output Capacitance V CE = 3V, V GE = V, f = MHz - 9 - pf C res Reverse Transfer Capacitance - 5 - pf Switching Characteristics T d(on) Turn-On Delay Time - - ns T r Rise Time - 2 - ns T d(off) Turn-Off Delay Time V CC = V, I C = A, - 35 - ns T f Fall Time R G = 6Ω, V GE = 5V, - - ns E on Turn-On Switching Loss Inductive Load, -.6 - mj E off Turn-Off Switching Loss -.27 - mj E ts Total Switching Loss -.3 - mj T d(on) Turn-On Delay Time - 6 - ns T r Rise Time - - ns T d(off) Turn-Off Delay Time V CC = V, I C = A, - 37 - ns T f Fall Time R G = 6Ω, V GE = 5V, - - ns E on Turn-On Switching Loss Inductive Load, -.59 - mj E off Turn-Off Switching Loss -.2 - mj E ts Total Switching Loss - 2. - mj 2
Electrical Characteristics of the IGBT (Continued) Symbol Parameter Test Conditions Min. Typ. Max Units Q g Total Gate Charge - 36 - nc Q ge Gate to Emitter Charge V CE = V, I C = A, V GE = 5V - - nc Q gc Gate to Collector Charge - 2 - nc Electrical Characteristics of the Diode = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max Units V FM Diode Forward Voltage I F = 2A E rec T rr Q rr Reverse Recovery Energy Diode Reverse Recovery Time Diode Reverse Recovery Charge I F = 2A, di F /dt = 2A/μs - 2.2 2.7 -.9 - - 5 - μj - 35 - - 2 - - 5 - - 776 - V ns μc FGHT65SPD-F5 65V A Field Stop Trench IGBT 3
Collector Current, IC [A] 2 9 6 3 2V 5V 2V V V GE = V 2 3 5 6 Figure. Typical Output Characteristics Collector Current, I C [A] 2 9 6 3 V GE = 5V Collector Current, IC [A] 2 9 6 3 2V 5V 2V V V GE = V 2 3 5 6 Figure 2. Typical Output Characteristics Collector Current, I C [A] 2 9 6 3 V CE = 2V FGHT65SPD-F5 65V A Field Stop Trench IGBT 2 3 5 6 Figure 3. Typical Saturation Voltage Characteristics 2 6 2 6 Gate-Emitter Voltage,V GE [V] Figure. Transfer Characteristic 5 3 2 V GE = 5V A A I C = 2A - -5 5 5 2 Collector-Emitter Case Temperature, [ o C] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2 6 2 I C = 2A A A = - o C 2 6 2 Gate-Emitter Voltage, V GE [V] Figure 6. Saturation Voltage vs. V GE
Figure 7. Saturation Voltage vs. V GE Capacitance [pf] 2 6 2 2 6 2 Gate-Emitter Voltage, V GE [V] I C = 2A A A V GE = V, f = MHz = 25 o C C ies C oes C res Collector-Emitter Voltage, VCE [V] 2 6 2 I C = 2A A A 2 6 2 Gate-Emitter Voltage, V GE [V] Figure. Saturation Voltage vs. V GE Gate-Emitter Voltage, V GE [V] 5 2 9 6 3 V CC = 2V V 3V FGHT65SPD-F5 65V A Field Stop Trench IGBT Figure 9. Capacitance Characteristics 3 3 2 3 Gate Charge, Q g [nc] Figure. Gate charge Characteristics 2 Collector Current, Ic [A] *Notes:. 2. T J = 75 o C 3. Single Pulse. Figure. SOA Characteristics μs ms ms DC μs Collector Current, IC [A] Safe Operating Area V GE = 5V, Figure 2. Turn off Switching SOA Characteristics 5
Switching Time [ns] 2 V CC = V, V GE = 5V I C = A 2 3 5 Gate Resistance, R G [Ω] Figure 3. Turn-on Characteristics vs. Gate Resistance Switching Time [ns] 2 t r t d(on) V GE = 5V, R G = 6Ω = 25 o C t r t d(on) Switching Time [ns] V CC = V, V GE = 5V I C = A t d(off) 2 3 5 Gate Resistance, R G [Ω] Figure. Turn-off Characteristics vs. Gate Resistance Switching Time [ns] V GE = 5V, R G = 6Ω = 75 o C t f t f t d(off) FGHT65SPD-F5 65V A Field Stop Trench IGBT 5 2 6 Collector Current, I C [A] Figure 5. Turn-on Characteristics vs. Collector Current 2 6 Collector Current, I C [A] Figure 6. Turn-off Characteristics vs. Collector Current Switching Loss [mj] 2 V CC = V, V GE = 5V I C = A = 25 o C E on E off Switching Loss [mj] 2 V GE = 5V, R G = 6Ω = 75 o C E on E off 2 3 5 Gate Resistance, R G [Ω] 3 6 Collector Current, I C [A] Figure 7. Switching Loss vs Gate Resistance Figure. Switching Loss vs Collector Current 6
Forward Current, I F [A] 2 T J = 25 o C T J = 75 o C T J = 75 o C = 75 o C = 25 o C T J = 25 o C 2 3 5 Forward Voltage, V F [V] Figure 9. Forward Characteristics Stored Recovery Charge, Q rr [nc] 6 2 di/dt = 2A/μs di/dt = A/μs Reverse Current, I R [μa] Reverse Recovery Time, t rr [ns].. 5 = 25 o C 2 6 65 Reverse Voltage, V R [V] Figure 2. Reverse Current 3 25 2 5 5 --- di/dt = 2A/μs di/dt = A/μs FGHT65SPD-F5 65V A Field Stop Trench IGBT 2 3 5 Forward Current, I F [A] Figure 2. Stored Charge Reverse Recovery Currnet, Irr [A] 6 2 di/dt = 2A/μs di/dt = A/μs di/dt = 2A/μs di/dt = A/μs 2 3 Forward Current, I F [A] Figure 23. Reverse Recovery Current 2 3 5 Forward Current, I F [A] Figure 22. Reverse Recovery Time 7
Thermal Response [Zthjc] Thermal Response [Zthjc]...5.2..5.2. single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + E-3-5 - -3-2 - 5.. Rectangular Pulse Duration [sec] Figure 2. Transient Thermal Impedance of IGBT.5.2..5.2. single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + E-3-5 - -3-2 - Figure 25. Transient Thermal Impedance of Diode P DM P DM R t l P l D ti [ ] t t 2 t t 2 FGHT65SPD-F5 65V A Field Stop Trench IGBT
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