Single P-Channel Advanced Power MOSFET Features -3V/-A, R DS (ON) =mω(typ.)@v GS =-V R DS (ON) =7.2mΩ(Typ.)@V GS =-4.V Low R DS (ON) Super High Dense Cell Design Reliable and Rugged G Pin Description D Applications Power Switching Appliaction Load Switching S G TO-22 D Absolute Maximum Ratings S Single P-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T C =2 C Unless Otherwise Noted) V DSS Drain-Source Voltage -3 V GSS Gate-Source Voltage ±2 V T J Maximum Junction Temperature 7 C T STG Storage Temperature Range - to 7 C I S Diode Continuous Forward Current T C =2 C - A Mounted on Large Heat Sink I DP 3μs Pulse Drain Current Tested T C =2 C -46 A 2 I D Continuous Drain Current(V GS =-V) T C =2 C - C T C = C -8 A P D Maximum Power Dissipation T C =2 C T C = C W R θjc Thermal Resistance-Junction to Case. C/W 3 R θja Thermal Resistance-Junction to Ambient C/W Drain-Source Avalanche Ratings 4 E AS Avalanche Energy, Single Pulsed 9 mj Rev. A NOV., 28 www.kwansemi.com
Electrical Characteristics (T C =2 C Unless Otherwise Noted) Symbol Parameter Test Condition KS334DA Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =-2µA -3 V I DSS V DS =-3V, V GS =V - Zero Gate Voltage Drain Current µa T J =2 C -3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-2µA - -2. V I GSS Gate Leakage Current V GS =±2V, V DS =V ± na R DS(ON) V GS =-V, I DS =-3A 7 mω Drain-Source On-state Resistance VGS =-4.V, I DS =-2A 7.2 mω Diode Characteristics V SD Diode Forward Voltage I SD =-2A, V GS =V -.8 -.2 V trr Reverse Recovery Time 34 ns ISD=-2A, dlsd/dt=-a/µs Qrr Reverse Recovery Charge 79 nc Dynamic Characteristics 6 R G Gate Resistance V GS =V,V DS =V,F=MHz Ω C iss Input Capacitance V GS =V, 49 C oss Output Capacitance V DS =-V, Frequency=.MHz 72 pf C rss Reverse Transfer Capacitance 46 t d(on) Turn-on Delay Time 3 t r Turn-on Rise Time V DD =-V, I DS =-3A, 2 t d(off) Turn-off Delay Time V GEN =-V,R G =3Ω 6 ns t f Turn-off Fall Time 33 Gate Charge Characteristics 6 Q g Total Gate Charge 89 Q gs Gate-Source Charge V DS =-V, V GS =-V, I DS=-2A Q gd Gate-Drain Charge 9 nc Notes: Pulse width limited by safe operating area. 2Calculated continuous current based on maximum allowable junction temperature. The package limitation current is -6A. 3When mounted on inch square copper board, t sec. The value in any given application depends on the user's specific board design. 4Limited by T Jmax, I AS =-A, L=.mH, V DD = -24V, R G = 2Ω, Starting TJ = 2 C. Pulse test;pulse width 3µs, duty cycle 2%. 6Guaranteed by design, not subject to production testing. Rev. A NOV., 28 2 www.kwansemi.com
Ordering and Marking Information Device Package Packaging Quantity Reel Size Tape width KS334DA TO-22 Tape&Reel 2 3 6mm KS 334 YWWXXX Y WW XXX =Year,27-A,28-B,etc. =Week. =Lot number. Rev. A NOV., 28 3 www.kwansemi.com
Typical Characteristics 2 Power Dissipation 4 Drain Current 2 P D -Power (W) 8 6 4 2 2 7 2 7 -I D -Drain Current (A) 8 6 4 2 Limited by Package VGS=-V 2 7 2 7 T J - Junction Temperature ( C) T J - Junction Temperature ( C) -I D - Drain Current (A) R DS(ON) limited R DS Safe Operation Area µs µs ms DC ms T C =2 C. -V DS - Drain-Source Voltage (V) R DS(ON) - On - Resistance (mω) 2 2 Drain Current Ids=-3A 2 3 4 6 7 8 9 -V GS - Gate-Source Voltage (V) ZthJC - Thermal Response ( C/W) Thermal Transient Impedance Duty=.,.2,.,.,.2,., Single Pulse. Single Pulse R θjc =. C/W. E-.... Square Wave Pulse Duration (sec) Rev. A NOV., 28 4 www.kwansemi.com
Typical Characteristics Output Characteristics -I D -Drain Current (A) Normalized On Resistance 3 2 2 2. 2... -V -6V -8V -4.V -4V -3V 2 3 4 R DS(ON) -On Resistance (mω) 2 2 Drain-Source On Resistance -4.V -V -V DS - Drain-Source Voltage (V) -I D - Drain Current (A) V GS =-V I DS =-2A Drain-Source On Resistance -I S - Source Current (A) 2 3 4 Source-Drain Diode Forward T J = C T J =2 C. T J =2 C Rds(on)=mΩ...2.4.6.8.2.4 - -2 2 7 2 T J - Junction Temperature ( C). -V SD - Source-Drain Voltage (V) C - Capacitance (pf) 8 7 6 4 3 2 Capacitance Frequency=.MHz Ciss Coss Crss -V DS - Drain-Source Voltage (V) -V GS - Gate-Source Voltage (V) 9 8 7 6 4 3 2 VDS=-V IDS=-3A Gate Charge 2 4 6 8 Q G - Gate Charge (nc) Rev. A NOV., 28 www.kwansemi.com
Package Information TO-22 θ θ θ θ θ2 SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A 2.2 2.3 2.4.87.9.94 A * *. * *.4 b.66.76.86.26.3.34 b3.3.29.46.22.28.2 c.47.3.6.9.2.24 D 6. 6. 6.2.236.24.244 D E 6..3 REF 6.6 6.7.26.2 REF.26.264 E 4.7 4.8 4.92.8.89.94 e H 9.8 2.28 REF..4.386.9 REF.398.49 L.4..7..6.67 L L2 2.743 REF. BSC.8 REF.2 BSC L3.9.7.2.3.42.49 L4.6.8..24.3.39 θ * 8 * 8 θ 7 9 7 9 θ2 7 9 7 9 Rev. A NOV., 28 6 www.kwansemi.com
Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Diode Recovery Test Circuit and Waveforms Gate Charge Test Circuit and Waveform Customer Service Kwansemi Semiconductor Co.,Ltd Email:Sales@kwansemi.com Web:www.kwansemi.com DISCLAIMER: Kwansemi reserves the right to change the specifications and circuitry itr without t notice at any time.the Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Rev. A NOV., 28 7 www.kwansemi.com