NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint ( X mm) AEC Q Qualified NVTRP These Devices are Pb Free and are RoHS Compliant Applications DC to DC Conversion Load/Power Switch for Portables and Computing Motherboard, Notebooks, Camcorders, Digital Camera s, etc. Battery Charging Circuits V (BR)DSS R DS(on) TYP I D Max (Note ) m @ V V.9 A m @. V P Channel MOSFET S G MAXIMUM RATINGS ( unless otherwise stated) Parameter Symbol Value Unit Drain to Source Voltage V DSS V Gate to Source Voltage V GS ± V Drain Current (Note ) t < s T A = C I D.9 A Power Dissipation (Note ) Continuous Drain Current (Note ) Power Dissipation (Note ) Steady State T A = 7 C.6 t < s P D. W T A = C I D. A T A = 7 C.9 Steady State P D. W Pulsed Drain Current t p = s I DM 6.8 A Operating Junction and Storage Temperature T J, T STG to Source Current (Body Diode) I S. A Lead Temperature for Soldering Purposes (/8 in from case for s) THERMAL RESISTANCE RATINGS C T L 6 C Parameter Symbol Max Unit Junction to Ambient Steady State (Note ) R JA C/W Junction to Ambient t = s (Note ) R JA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Surface mounted on FR board using in sq. pad size (Cu area =.7 in sq. [ oz] including traces). SOT CASE 8 STYLE D MARKING DIAGRAM/ PIN ASSIGNMENT Drain TR = Device Code M = Date Code* = Pb Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NTRPTG NVTRPTG SOT (Pb Free) SOT (Pb Free) Gate TR M Source / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Semiconductor Components Industries, LLC, August, Rev. Publication Order Number: NTRP/D
NTRP, NVTRP Electrical Characteristics ( unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage V (BR)DSS V GS = V, I D = A V Zero Gate Voltage Drain Current I DSS V GS = V, V DS = V A T J = C Gate to Source Leakage Current I GSS V DS = V, V GS = ± V ± na ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V GS = V DS, I D = A.. V Drain to Source On Resistance R DS(on) V GS = V, I D =.9 A m V GS =. V, I D =. A Forward Transconductance g FS V DS = V, I D =. A S CHARGES AND CAPACITANCES Input Capacitance C ISS V GS = V, f = MHz, V DS = V pf Output Capacitance C OSS 8 Reverse Transfer Capacitance C RSS Total Gate Charge Q G(TOT) V GS = V, V DS = V; I D =.9 A 6 nc Threshold Gate Charge Q G(TH). Gate to Source Charge Q GS Gate to Drain Charge Q GD.7 SWITCHING CHARACTERISTICS (Note ) Turn On Delay Time t d(on) V GS = V, V DD = V,. ns Rise Time t r I D =.9 A, R G = 6 Turn Off Delay Time t d(off) 9 Fall Time t f 7. DRAIN SOURCE DIODE CHARACTERISTICS (Note ) Forward Diode Voltage V SD V GS = V, I S =. A.8. V Reverse Recovery Time t RR V GS = V, di SD /d t = A/ s, I S =. A ns. Surface mounted on FR board using in sq. pad size (Cu area =.7 in sq. [ oz] including traces).. Pulse Test: pulse width s, duty cycle %.. Switching characteristics are independent of operating junction temperatures.
NTRP, NVTRP V GS =. V V GS =. V V GS = 7. V V GS = V V GS =. V V GS =. V V GS =.8 V V GS =.6 V V GS =. V V GS =. V V GS =.8 V V GS =.6 V V DS = V T J = C T J = C 6 7 8 9 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. On Region Characteristics 6 7 V GS, GATE TO SOURCE VOLTAGE (V) Figure. Transfer Characteristics R DS(on), DRAIN TO SOURCE RESISTANCE ( )...... I D =.9 A. 6 7 8 9 V GS, GATE TO SOURCE VOLTAGE (V) Figure. On Resistance versus Gate to Source Voltage R DS(on), DRAIN TO SOURCE RESISTANCE ( ).... V GS =. V V GS = V..... Figure. On Resistance versus Drain Current and Gate Voltage R DS(on), DRAIN TO SOURCE RESISTANCE (NORMALIZED).8.6...8.6 I D =.9 A V GS = V 7 T J, JUNCTION TEMPERATURE ( C) Figure. On Resistance Variation with Temperature I DSS, LEAKAGE (na) V GS = V T J = C T J = C 6 8 6 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 6. Drain to Source Leakage Current versus Voltage
NTRP, NVTRP V DS = V V GS = V C, CAPACITANCE (pf) C ISS C RSS C RSS C OSS C ISS V GS, GATE TO SOURCE VOLTAGE (V) 8 6 V GS V DS GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE (V) Q GS Figure 7. Capacitance Variation Q GD Q T 6 7 Q G, TOTAL GATE CHARGE (nc) I D =.9 A Figure 8. Gate to Source and Drain to Source Voltage versus Total Charge 8 9 6 V DS, DRAIN TO SOURCE VOLTAGE (V) t, TIME (ns) V DS = V I D =.9 V V GS = V t d(off) t d(on) t r t f I S, SOURCE CURRENT... R G, GATE RESISTANCE ( ) Figure 9. Resistive Switching Time Variation versus Gate Resistance..6.9. V SD, SOURCE TO DRAIN VOLTAGE (V) Figure. Diode Forward Voltage versus Current
NTRP, NVTRP PACKAGE DIMENSIONS A E A D e b HE SEE VIEW C L L VIEW C SOT (TO 6) CASE 8 8 ISSUE AP c. NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.89..... A..6.... b.7....8. c.9..8...7 D.8.9.... E....7.. e.78.9..7.7.8 L.....8. L...69...9 H E...6.8.9. STYLE : PIN. GATE. SOURCE. DRAIN SOLDERING FOOTPRINT*.9.7.9.7.9..8. SCALE :..79 mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado 87 USA Phone: 67 7 or 8 86 Toll Free USA/Canada Fax: 67 76 or 8 867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 8 98 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 8 77 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTRP/D