UNISONIC TECHNOLOGIES CO., LTD UT64 5A, 3V P-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UTC UT64 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate charge. This device is suitable for use as a load switch or in PWM applications. SYMBOL SOT-223 5 6 4 2 3 (SC-59) 2 Drain Gate Source ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 2 3 4 5 6 Packing UT64L-AA3-R UT64G-AA3-R SOT-223 G D S - - - Tape Reel UT64L-AE3-R UT64G-AE3-R G S D - - - Tape Reel UT64L-AG6-R UT64G-AG6-R D D G S D D Tape Reel Note: Pin Assignment: G: Gate S: Source D: Drain MARKING SOT-223 64A L: Lead Free G: Halogen Free of 5 Copyright 28 Unisonic Technologies Co., Ltd QW-R52-5.E
UT64 ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS -3 Gate-Source Voltage V GSS ±2 V Continuous Drain Current (Note 3) I D -5 Pulsed Drain Current (Note 2) I DM -2 A SOT-223.78 Power Dissipation P D W.3 Junction Temperature T J +5 C Storage Temperature T STG -55 ~ +5 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT SOT-223 7 Junction to Ambient θ JA C/W Note: The data tested by surface mounted on a inch 2 FR-4 board with 2OZ copper. ELECTRICAL CHARACTERISTICS (T J =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =V, I D =-25uA -3 V Drain-Source Leakage Current I DSS V DS =-24V, V GS =V - ua Gate-Source Leakage Current I GSS V DS =V, V GS =±2V ± na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS, I D =-25uA -.7 - -.3 V On State Drain Current I D(ON) V DS =-5V, V GS =-4.5V -25 A V GS =-V, 42 49 mω Static Drain-Source On-Resistance (Note 2) R DS(ON) V GS =-4.5V, I D =-4A 53 64 mω V GS =-2.5V, I D =-A 8 9 mω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 943 pf Output Capacitance C OSS V GS =V,V DS =-5V,f=.MHz 8 pf Reverse Transfer Capacitance C RSS 73 pf SWITCHING CHARACTERISTICS Total Gate Charge (Note 2) Q G 9.5 nc V DS =-5V, V GS =-4.5V, Gate-Source Charge Q GS 2. nc Gate-Drain Charge Q GD 2.9 nc Turn-ON Delay Time (Note 2) t D(ON) 6 ns Turn-ON Rise Time t R V DS =-5V, V GS =-V, 3 ns Turn-OFF Delay Time t D(OFF) R G =6Ω, R L =3Ω 4 ns Turn-OFF Fall Time t F ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current I S -5 A MAXIMUN Body-Diode Pulsed Current I SM -2 A Drain-Source Diode Forward Voltage(Note2) V SD I S =-A, V GS =V -.75 - V Notes:. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Pulse width 3µs, duty cycle.5%. UNISONIC TECHNOLOGIES CO., LTD 2 of 5 QW-R52-5.E
UT64 TYPICAL CHARACTERISTICS On-Resistance, RDS(ON) (mω) Capacitance (pf) Drain-Current, -ID (A) Drain Current, -ID (A) 9 On-Resistance vs. Gate-Source Voltage.E+ Body-Diode Characteristics On-Resistance, RDS(ON) (mω) 7 5 3 9 7 25 I D =-2A 5 25 3 2 4 6 8 Gate-Source Voltage, -V GS (V) Source Current, -IS (A).E+.E-.E-2.E-3.E-4.E-5 25 25.E-6..2.4.6.8..2 Source-Drain Voltage, -V SD (V) UNISONIC TECHNOLOGIES CO., LTD 3 of 5 QW-R52-5.E
UT64 TYPICAL CHARACTERISTICS (Cont.) Gate-Source Voltage, -VGS (V) 5 4 3 2 V DS =-5V Gate-Charge Characteristics Power (W) 4 3 2 Single Pulse Power Rating Junction-to- Ambient T J(Max) =5 T A =25 2 4 6 8 2 Gate Charge, -Q G (nc)... Pulse Width (s) Drain-Current, -ID (A) Normalized Transient Thermal Resistance,ZθJA UNISONIC TECHNOLOGIES CO., LTD 4 of 5 QW-R52-5.E
UT64 TYPICAL CHARACTERISTICS (Cont.) Drain Current vs. Source to Drain Voltage -.8-2 Drain-Source On-State Resistance Characteristics -.6 - Drain Current, ID (A) -.4 -.2 Drain Current, ID (A) -8-6 -4-2 V GS =-V V GS =-4.5V I D =-4A V GS =-2.5V I D =-A -.2 -.4 -.6 -.8 Source to Drain Voltage,V SD (V) - -. -.2 -.3 Drain to Source Voltage, V DS (V) -.4 Drain Current, ID (µa) Drain Current, IDSS (µa) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD 5 of 5 QW-R52-5.E