FDD4243-F85 P-Channel PowerTrench MOSFET -V, -4A, 64mΩ Features Typ r DS(on) = 36m at V GS = -V, I D = -6.7A Typ r DS(on) = 48m at V GS = -4.5V, I D = -5.5A Typ Q g(tot) = 2nC at V GS = -V High performance trench technology for extremely low r DS(on) RoHS Compliant Qualified to AEC Q Applications Inverter Power Supplies Semiconductor Components Industries, LLC. September-7, Rev. 2 Publication Order Number: FDD4243-F85/D
MOSFET Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain to Source Voltage - V V GS Gate to Source Voltage ± V Drain Current Continuous (T C < 3 o C, V GS = V) -4 I D Pulsed See Figure 4 E AS Single Pulse Avalanche Energe (Note ) 84 mj P D Power Dissipation 5 W Dreate above 25 o C.34 W/ o C T J, T STG Operating and Storage Temperature -55 to +75 o C Thermal Characteristics R JC Maximum Thermal Resistance Junction to Case 3 R JA Maximum Thermal Resistance Junction to Ambient TO-252, in 2 copper pad area o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD4243 FDD4243-F85 TO252 3 2mm 25 units Note:. A suffix as...f85p has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in Aug 4. Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics A o C/W BV DSS Drain to Source Breakdown Voltage I D = -25 A, V GS = V - - - V BV DSS Breakdown Voltage Temperature ID = -25μA, referenced to 25 C - -32 - mv/ C T J Coefficient I DSS Zero Gate Voltage Drain Current On Characteristics Dynamic Characteristics V DS = -32V T J = 25 o C - - - - - - I GSS Gate to Source Leakage Current V GS = ±V - - ± na V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = -25 A -.4 -.6-3. V V GS(th) T J Gate to Source Threshold Voltage Temperature Coefficient ID = 25μA, referenced to 25 C - 4.7 - mv/ C I D = -6.7A, V GS = -V - 36 44 I r DS(on) Drain to Source On Resistance D = -5.5A, V GS = -4.5V - 48 64 m I D = -6.7A, V GS = -V, 57 7 T J = 5 o - C g FS Forward Transconductance I D = 6.7A, V DS = 5V, - 23 - S C iss Input Capacitance - 65 55 pf V DS = -V, V GS = V, C oss Output Capacitance - 65 2 pf f = MHz C rss Reverse Transfer Capacitance - 9 35 pf R G Gate Resistance f = MHz - 4 - Q g(tot) Total Gate Charge - 2 29 nc Q gs Gate to Source Gate Charge V DD = -V, V GS = -V - 3.4 - nc Q gd Gate to Drain Miller Charge I D = -6.7A - 4 - nc A 2
Electrical Characteristics T J = 25 o C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t d(on) Turn-On Delay Time - 6 2 ns t r Rise Time V DD = -V, I D = -6.7A - 5 26 ns t d(off) Turn-Off Delay Time V GS = -V, R GEN = 6-22 35 ns t f Fall Time - 7 4 ns Drain-Source Diode Characteristics V SD Source to Drain Diode Voltage I SD = -6.7A, V GS =V - -.86 -.2 V t rr Reverse Recovery Time - 29 43 ns I SD = -6.7A, di SD /dt = A/ s Q rr Reverse Recovery Charge - 3 44 nc Note: 2. Starting T J = 25 C, L = 3mH, I AS = 7.5A, V GS = V, V DD = V during the inductor charging time and V during the time in avalanche. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q at: http://www.aecouncil.com/ All ON Semiconductor products are manufactured, assembled and tested under ISO9 and QS9 quality systems certification. 3
Typical Characteristics POWER DISSIPATION MULTIPLIER.2..8.6.4.2. 25 5 75 25 5 75 T C, CASE TEMPERATURE( o C) Figure. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, Z JC 2.. DUTY CYCLE - DESCENDING ORDER D =.5...5.2. SINGLE PULSE -I D, DRAIN CURRENT (A) R JC = 3 o C/W 25 5 75 25 5 75 T C, CASE TEMPERATURE ( o C) Figure 2. Maximum Continuous Drain Current vs Case Temperature. -5-4 -3-2 - t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance 3 CURRENT LIMITED BY PACKAGE V GS = -V V GS = -4.5V P DM t t 2 NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z JA x R JA + T A -IDM, PEAK CURRENT (A) V GS = V T C = 25 o C FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 75 - T C 25 5 SINGLE PULSE -5-4 -3-2 - t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 4
Typical Characteristics -ID, DRAIN CURRENT (A) 3 SINGLE PULSE TJ = MAX RATED us ms ms DC OPERATION IN THIS AREA MAY BE LIMITED BY rds(on) TC = 25 o C. 9 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area -ID, DRAIN CURRENT (A) 6 5 3 V DD = -5V T J = -55 o C T J = 25 o C T J = 75 o C -IAS, AVALANCHE CURRENT (A) If R = t AV = (L)(I AS )/(.3*RATED BV DSS - V DD ) If R t AV = (L/R)ln[(I AS *R)/(.3*RATED BV DSS - V DD ) +] STARTING T J = 5 o C STARTING T J = 25 o C. t AV, TIME IN AVALANCHE (ms) NOTE: Refer to ON Semiconductor Application Notes AN754 and AN755 Figure 6. Unclamped Inductive Switching Capability -ID, DRAIN CURRENT (A) 6 5 3 V GS = -5V V GS = -V V GS = -6V V GS = -4.5V V GS = -4V V GS = -3V 2 3 4 5 6 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics 2 3 4 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Saturation Characteristics rds(on), DRAIN TO SOURCE ON-RESISTANCE (m ) 8 6 8 6 I D = -6.7A T J = 25 o C T J = 75 o C 2 4 6 8 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2..8.6.4.2..8 I D = -6.7A V GS = -V.6-8 - 8 6 T J, JUNCTION TEMPERATURE( o C) Figure. Normalized Drain to Source On Resistance vs Junction Temperature 5
Typical Characteristics NORMALIZED GATE THRESHOLD VOLTAGE.3.2...9.8.7.6.5 V GS = V DS I D = -25 A.4-8 - 8 6 T J, JUNCTION TEMPERATURE( o C) Figure. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pf) 5 C iss C oss C rss f = MHz V GS = V. -V DS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE.5..5..95 I D = -25 A.9-8 - 8 6 T J, JUNCTION TEMPERATURE ( o C) Figure 2. Normalized Drain to Source Breakdown Voltage vs Junction Temperature -VGS, GATE TO SOURCE VOLTAGE(V) 8 6 4 2 V DD = -V V DD = -3V V DD = -V 4 8 2 6 24 Q g, GATE CHARGE(nC) Figure 3. Capacitance vs Drain to Source Voltage Figure 4. Gate Charge vs Gate to Source Voltage 6
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: 33 675 275 or 8 344 386 Toll Free USA/Canada Fax: 33 675 276 or 8 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: 8 282 9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 8 3 587 5 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative