UNISONIC TECHNOLOGIES CO., LTD 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 12N80 is universally applied in high efficiency switch mode power supply. FEATURES * R DS(on) < 1.0Ω @ V GS =10V, I D =6.0A * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 1 2 3 Packing 12N80L-T47-T 12N80G-T47-T TO-247 G D S Tube 12N80L-T3P-T 12N80G-T3P-T TO-3P G D S Tube 12N80L-TC3-T 12N80G-TC3-T TO-230 G D S Tube 12N80L-TF2-T 12N80G-TF2-T TO-220F2 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source MARKING 1 of 8 Copyright 2018 Unisonic Technologies Co., Ltd
ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 800 V Gate-Source Voltage V GSS ±30 V Drain Current Continuous (T C =25 C) I D 12 A Pulsed (Note 2) I DM 48 A TO-247 360 W Power Dissipation TO-3P 390 W P D TO-230 167 W TO-220F2 35 W Junction Temperature T J +150 C Storage Temperature T STG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. THERMAL DATA θ JA PARAMETER SYMBOL RATINGS UNIT TO-247 50 C/W Junction to Ambient TO-3P 40 C/W TO-220F2/TO-230 62.5 C/W TO-247 0.35 C/W Junction to Case TO-3P 0.32 C/W θ JC TO-230 0.75 C/W TO-220F2 3.6 C/W UNISONIC TECHNOLOGIES CO., LTD 2 of 8
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =250µA, V GS =0V 800 V Drain-Source Leakage Current I DSS V DS =800V, V GS =0V 10 V DS =640V, T C =125 C 100 µa Gate- Source Leakage Current Forward V GS =+30V, V DS =0V 100 na I GSS Reverse V GS =-30V, V DS =0V -100 na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS, I D =250µA 3.0 5.0 V Static Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =6.0A 1.0 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 2200 pf Reverse Transfer Capacitance C RSS 30 pf Output Capacitance C OSS V GS=0V, V DS=25V, f=1.0mhz 200 pf SWITCHING PARAMETERS Total Gate Charge Q G 58 nc V DS =300V, V GS =10V, I D =10A Gate to Source Charge Q GS 18 nc I G =1mA (Note 1, 2) Gate to Drain Charge Q GD 20 nc Turn-ON Delay Time t D(ON) 38 ns Rise Time t R V DD =400V, V GS =10V, I D =10A, 36 ns Turn-OFF Delay Time t D(OFF) R G =25Ω (Note 1, 2) 172 ns Fall-Time t F 42 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 12 A Maximum Body-Diode Pulsed Current I SM 48 A Drain-Source Diode Forward Voltage V SD I S =12A, V GS =0V 1.4 V Body Diode Reverse Recovery Time t rr V GS =0V, I S =12A, di F /dt=100a/µs 1000 ns Body Diode Reverse Recovery Charge Q RR (Note 1) 17.0 µc Notes: 1. Pulse Test: Pulse width 250µs, Duty cycle 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD 3 of 8
TEST CIRCUITS AND WAVEFORMS Same Type as DUT V GS Q G V DS Q GS Q GD V GS DUT Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD 4 of 8
TEST CIRCUITS AND WAVEFORMS (Cont.) DUT + R G V DS - L I SD V GS V DD Driver Same Type as DUT dv/dt controlled by R G I SD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms V GS (Driver ) Gate Pulse Width D= Gate Pulse Period 10V I SD (DUT) I FM, Body Diode Forward Current di/dt I RM Body Diode Reverse Current V DS (DUT) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD 5 of 8
TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD 6 of 8
TYPICAL CHARACTERISTICS (Cont.) UNISONIC TECHNOLOGIES CO., LTD 7 of 8
TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD 8 of 8