FDMB237NZ Dual Common Drain N-Channel PowerTrench MOSFET 2 V, 9.7 A, 6.5 mω Features Max r SS2(on) = 6.5 mω at V GS = 4.5 V, I D = 8 A Max r SS2(on) = 8 mω at V GS = 4.2 V, I D = 7.4 A Max r SS2(on) = 2 mω at V GS = 3. V, I D = 7 A Max r SS2(on) = 24 mω at V GS = 2.5 V, I D = 6.7 A Low Profile -.8 mm maximum - in the new package MicroFET 2x3 mm HBM ESD protection level > 2 kv (Note 3) RoHS Compliant Pin Pin S D/D2 S G General Description April 24 This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild s advanced PowerTrench process with state of the art MicroFET Leadframe, the FDMB237NZ minimizes both PCB space and r SS2(on). Application Li-Ion Battery Pack G2 S2 S2 4 3 5 6 2 G S S S2 S2 G2 Top Bottom MLP 2x3 MOSFET Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Ratings Units V SS2 Source to Source2 Voltage 2 V V GS Gate to Source Voltage (Note 4) ±2 V Source to Source2 Current -Continuous T A = 25 C (Note a) 9.7 I SS2 -Pulsed 4 A Power Dissipation T A = 25 C (Note a) 2.2 P D Power Dissipation T A = 25 C (Note b).8 W T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction to Ambient(Dual Operation) (Note a) 57 R θja Thermal Resistance, Junction to Ambient(Dual Operation) (Note b) 6 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity 37 FDMB237NZ MLP 2x3 7 8 mm 3 units
Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics I SS2 Zero Gate Voltage Source to Source2 Current V SS2 = 6 V, V GS = V μa I GSS Gate to Source Leakage Current V GS = 2 V, V SS2 = V μa On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V SS2, I SS2 = 25 μa.6.5 V Dynamic Characteristics Switching Characteristics V GS = 4.5 V, I SS2 = 8 A.5 3.5 6.5 V GS = 4.2 V, I SS2 = 7.4 A 4 8 V r SS2(on) Static Source to Source2 On Resistance GS = 3. V, I SS2 = 7 A.5 6 2 mω V GS = 2.5 V, I SS2 = 6.7 A 2 8 24 V GS = 4.5 V, I SS2 = 8 A, 2 29 T J = 25 C g FS Forward Transconductance V SS2 = 5 V, I SS2 = 8 A 4 S C iss Input Capacitance 76 264 pf V SS2 = V, V GS = V, C oss Output Capacitance 229 345 pf f = MHz C rss Reverse Transfer Capacitance 2 32 pf R g Gate Resistance (Note 5). 2.6 8 Ω t d(on) Turn-On Delay Time 2 22 ns t r Rise Time V SS2 = V, I SS2 = 8 A, 9 34 ns t d(off) Turn-Off Delay Time V GS = 4.5 V, R GEN = 6 Ω 32 5 ns t f Fall Time 9.5 7 ns Q g Total Gate Charge V GS = V to 5 V 2 28 nc Q V SS2 = V, g Total Gate Charge V GS = V to 4.5 V 8 25 nc I SS2 = 8 A, Q gs Gate to Source Charge 2.8 nc V G2S2 = V Q gd Gate to Source2 Miller Charge 5.3 nc Source- Source2 Diode Characteristics I fss Maximum Continuous Source-Source2 Diode Forward Current 8 A V fss Source to Source2 Diode Forward Voltage V GS = V, V G2S2 = 4.5 V,.8.2 V I fss = 8 A (Note 2) NOTES:. R θja is determined with the device mounted on a in 2 pad 2 oz copper pad on a.5 x.5 in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 57 C/W when mounted on a in 2 pad of 2 oz copper b. 6 C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 3 μs, Duty cycle < 2.%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. 5. Rg is measured on % of the die at wafer level. 2
Typical Characteristics T J = 25 C unless otherwise noted ISS2, SOURCE TO SOURCE2 CURRENT (A) NORMALIZED SOURCE TO SOURCE2 ON-RESISTANCE 4 3 2..2.4.6.8 V SS2, SOURCE TO SOURCE2 VOLTAGE (V).5. Figure. V GS = 4.5 V V GS = 4.2 V V GS = 3. V V GS = 2.5 V V G2S2 = 4.5 V ISS2, SOURCE TO SOURCE2 CURRENT (A)..2.4.6.8 V SS2, SOURCE TO SOURCE2 VOLTAGE (V) On-Region Characteristics Figure 2. On-Region Characteristics V GS = 2.5 V V GS = 3. V V GS = 4.2 V V GS = 4.5 V V G2S2 = 4.5 V.5 2 3 4 I SS2, SOURCE TO SOURCE2 CURRENT (A) Figure 3. Normalized On-Resistance vs Source to Source2 Current and Gate Voltage NORMALIZED SOURCE TO SOURCE2 ON-RESISTANCE 4 3 2.5. V GS = 2.5 V V GS = 4.5 V V GS = 4.2 V V GS = 3. V V GS = 3. V V GS = 2.5 V V GS = 4.2 V V GS = 4.5 V.5 2 3 4 I SS2, SOURCE TO SOURCE2 CURRENT (A) Figure 4. Normalized On-Resistance vs Source to Source2 Current and Gate Voltage NORMALIZED SOURCE TO SOURCE2 ON-RESISTANCE.6.4.2..8 I SS2 = 8 A V GS = 4.5 V.6-5 -25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( o C) Figure 5. Normalized On Resistance vs Junction Temperature rss2(on), SOURCE TO SOURCE2 ON-RESISTANCE (mω) 8 6 4 2 T J = 25 o C..5 2. 2.5 3. 3.5 4. 4.5 Figure 6. T J = 5 o C I SS2 = 8 A V GS, GATE TO SOURCE VOLTAGE (V) On Resistance vs Gate to Source Voltage 3
Typical Characteristics T J = 25 C unless otherwise noted I SS2, SOURCE TO SOURCE2 CURRENT (A) VGS, GATE TO SOURCE VOLTAGE (V) 4 3 2 V SS2 = 5 V.5..5 2. 5 4 3 2 Figure 7. V G2S2 = V I SS2 = 8 A T J = 5 o C T J = 25 o C V GS, GATE TO SOURCE VOLTAGE (V) T J = -55 o C Ifss, SOURCE TO SOURCE2 FORWARD CURRENT (A)...2.4.6.8..2 Transfer Characteristics Figure 8. Source to Source2 Diode Forward Voltage vs Source Current V SS2 = 8 V V SS2 = 2 V V SS2 = V 5 5 2 25 Q g, GATE CHARGE (nc) Figure 9. Gate Charge Characteristics CAPACITANCE (pf).. V GS = V, V G2S2 = 4.5 V T J = 5 o C T J = 25 o C T J = -55 o C V fss, BODY DIODE FORWARD VOLTAGE (V) C iss C oss C rss Figure. Capacitance vs Source to Source2 Voltage f = MHz V GS = V. 2 VSS2, SOURCE TO SOURCE2 VOLTAGE (V) Ig, GATE LEAKAGE CURRENT (A) - V SS2 = V -2-3 -4-5 -6-7 -8-9 - 4 8 2 6 Figure. T J = 25 o C T J = 25 o C V GS, GATE TO SOURCE VOLTAGE (V) Gate Leakage Current vs Gate to Source Voltage ISS2, SOURCE TO SOURCE2 CURRENT (A) ms THIS AREA IS LIMITED BY r DS(on) ms SINGLE PULSE s. T J = MAX RATED s R θja = 6 o C/W DC T A = 25 o C... V SS2, SOURCE TO SOURCE2 VOLTAGE (V) Figure 2. Forward Bias Safe Operating Area ms 4
Typical Characteristics T J = 25 C unless otherwise noted P (PK), PEAK TRANSIENT POWER (W) NORMALIZED THERMAL IMPEDANCE, Z θja.5-3 -2 - t, PULSE WIDTH (sec) 2.. DUTY CYCLE-DESCENDING ORDER D =.5.2..5.2. Figure 3. Single Pulse Maximum Power Dissipation SINGLE PULSE R θja = 6 o C/W SINGLE PULSE R θja = 6 o C/W T A = 25 o C. -3-2 - t, RECTANGULAR PULSE DURATION (sec) P DM t t 2 NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θja x R θja + T A Figure 4. Junction-to-Ambient Transient Thermal Response Curve 5
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