FDZ24P June 07 Monolithic Common Drain P-Channel 2.V Specified Power Trench BGA MOSFET -V, -6.A, 28mΩ Features Max r DS(on) = 28mΩ at V GS = -4.V, I D = -6.A Max r DS(on) = 4mΩ at V GS = -2.V, I D = -A Occupies only 0. cm 2 of PCB area: /3 the area of SO-8 Ultra-thin package: less than 0.80 mm height when mounted to PCB Outstanding thermal transfer characteristics: significantly better than SO-8 Ultra-low Qg x r DS(on) figure-of-merit High power and current handling capability RoHS Compliant Bottom General Description Combining Fairchild s advanced 2.V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ24P minimizes both PCB space and r DS(on). This monolithic common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low r DS(on). Applications Battery management Load Switch Battery protection MOSFET Maximum Ratings T A = 2 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage - V V GS Gate to Source Voltage ±2 V Drain Current -Continuous (Note a) -6. I D -Pulsed - A P D Power Dissipation (Steady State) (Note a) 2. W T J, T STG Operating and Storage Junction Temperature Range - to +0 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case (Note ) 0.6 R θja Thermal Resistance, Junction to Ambient (Note a) 60 R θja Thermal Resistance, Junction to Ambient (Note b) 8 R θjb Thermal Resistance, Junction to Ball (Note ) 6.3 Package Marking and Ordering Information Top G D G S S Q Q2 C/W FDZ24P Monolithic Common Drain P-Channel 2.V Specified Power PowerTrench BGA MOSFET Device Marking Device Package Reel Size Tape Width Quantity 24P FDZ24P BGA 2.X4.0 7 2 mm 3000 units
Electrical Characteristics T J = 2 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = -µa, V GS = 0V - V BV DSS Breakdown Voltage Temperature T J Coefficient I D = -µa, referenced to 2 C -3 mv/ C I DSS Zero Gate Voltage Drain Current V DS = -6V, V GS = 0V - µa I GSS Gate to Source Leakage Current V GS = ±2V, V DS = 0V ±0 na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = -µa -0.6-0.8 -. V V GS(th) Gate to Source Threshold Voltage T J Temperature Coefficient I D = -µa, referenced to 2 C 3 mv/ C V GS = -4.V, I D = -6.A 2 28 V r DS(on) Static Drain to Source On Resistance GS = -2.V, I D = -A 36 4 mω V GS = -4.V, I D = -6.A, 30 43 T J = 2 C g FS Forward Transconductance V DD = -V, I D = -6.A 24 S Dynamic Characteristics C iss Input Capacitance 430 900 pf V DS = -V, V GS = 0V, C oss Output Capacitance 39 42 pf f = MHz C rss Reverse Transfer Capacitance 64 24 pf R g Gate Resistance V GS = mv, f = MHz 9.2 Ω Switching Characteristics t d(on) Turn-On Delay Time 2 22 ns t V DD = -V, I D =-A, r Rise Time 9 8 ns V GS = -4.V, R GEN = 6Ω t d(off) Turn-Off Delay Time 62 0 ns t f Fall Time 37 60 ns Q g Total Gate Charge V GS = -4.V, V DD =-V 4 nc Q gs Gate to Source Charge I D = -6.A 3 nc Q gd Gate to Drain Miller Charge 4 nc Drain-Source Diode Characteristics I S Maximum Continuous Drain-Source Diode Forward Current -.7 A V SD Source to Drain Diode Forward Voltage V GS = 0V, I S = -.7A (Note 2) -0.7 -.2 V t rr Reverse Recovery Time 2 40 ns I F = -6.A, di/dt = 0A/µs Q rr Reverse Recovery Charge 32 nc NOTES:. R θja is determined with the device mounted on a in 2 oz. copper pad on a. x. in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, R θjb, is defined for reference. For R θjc, the thermal reference point for the case is defined as the top surface of the copper chip carrier. R θjc and R θjb are guaranteed by design while R θja is determined by the user's board design. a. 60 C/W when mounted on a in 2 pad of 2 oz copper. b. 8 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 2
Typical Characteristics T J = 2 C unless otherwise noted -I D,DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -I D, DRAIN CURRENT (A) 0 0.0 0..0. 2.0 -V DS, DRAIN TO SOURCE VOLTAGE (V).4.3.2..0 0.9 Figure. V GS = -2.V V GS = - 4.V V GS = -4V V GS = - 3.V V GS = -2V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE.0 V GS = -4.V 0.8 0 -I D, DRAIN CURRENT(A) On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 0.8-0 -2 0 2 0 7 0 2 0 Figure 3. Normalized On- Resistance vs Junction Temperature I D = -6.A V GS = -4.V T J, JUNCTION TEMPERATURE ( o C) V DD = -V T J =2 o C T J = 2 o C T J = - o C 0 0..0. 2.0 2. -V GS, GATE TO SOURCE VOLTAGE (V) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) -IS, REVERSE DRAIN CURRENT (A) 2.2 2.0.8.6.4.2 90 80 70 60 0 40 30 V GS = -2V Figure 4. V GS = -2.V T J = 2 o C V GS = -3.V I D = -3.2A V GS = -4V T J = 2 o C. 2.0 2. 3.0 3. 4.0 4. -V GS, GATE TO SOURCE VOLTAGE (V) 0 0. 0.0 E-3 V GS = 0V On-Resistance vs Gate to Source Voltage T J = 2 o C T J = - o C T J = 2 o C E-4 0.0 0.2 0.4 0.6 0.8.0.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3
Typical Characteristics T J = 2 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -ID, DRAIN CURRENT (A) 4 3 2 I D = -6.A 0 0 4 8 2 6 Figure 7. 0 V DD = -V V DD = -V Q g, GATE CHARGE(nC) V DD = -V 30 0. -V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage SINGLE PULSE 0ms TJ = MAX RATE R θja = 8 o C/W s 0. T A = 2 o C s THIS AREA IS LIMITED DC BY r DS(ON) 0.0 0. 0 -V DS, DRAIN to SOURCE VOLTAGE (V) NORMALIZED THERMAL IMPEDANCE, Z θja 0.0 Figure 9. Forward Bias Safe Operating Area 2 DUTY CYCLE-DESCENDING ORDER 0. D = 0. 0.2 0. 0.0 0.02 0.0 SINGLE PULSE ms ms CAPACITANCE (pf) P(PK), PEAK TRANSIENT POWER (W) 00 00 0 3000 00 0 f = MHz V GS = 0V V GS = -4.V C iss C oss C rss SINGLE PULSE R θja = 8 o C/W T A = 2 o C 0. -3-2 - 0 2 3 t, PULSE WIDTH (s) Figure. Single Pulse Maximum Power Dissipation P DM t t 2 NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θja x R θja + T A E-3-3 -2-0 2 3 t, RECTANGULAR PULSE DURATION (s) Figure. Transient Thermal Response Curve 4
Dimensional Outline and Pad Layout
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