0MHz to 20MHz Balanced ½ W Medium Power GaAs HBT Amplifier SXA-331B(Z) 0MHz to 20MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description RFMD a SXA-331B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 0-20 MHz cellular, ISM, WLL, PCS, W-CDMA applications.its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs phemt Si CMOS Si BJT GaN HEMT RF MEMS RFin 1 2 3 4 SXA-331B 7 6 5 RFout Features 5V On-Chip Active Bias Control Balanced For Excellent Input/Output VSWR and Minimized Reflections High OIP 3 :+47 Typ. High P 1 :+2 Typ. Patented High Reliability GaAs HBT Technology Surface-Mountable Power Plastic Package Applications W-CDMA, PCS, Cellular Systems High Linearity IF Amplifiers Multi-Carrier Applications Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 16.0 17.5 19.0 MHz 12. 1960MHz 10.5 12.0 13.5 21MHz Output Power at 1 Compression 27.5 MHz 2.0 1960MHz 27.0 2.0 21MHz Output Third Order Intercept Point 44.0 47.0 MHz, P OUT per tone=+11, Tone Spacing=1MHz 47.0 1960MHz 44.0 47.0 21MHz Noise Figure 4.5 6.0 MHz 5.1 1960MHz and 21MHz Input VSWR 1.3 1.7 MHz 1.2 1960MHz and 21Mhz Adjacent Channel Power -.0 c 0MHz and 1960MHz, IS-95 at P OUT =19 - c 21MHz, W-CDMA at P OUT =1 Device Operating Current 10.0 2.0 20.0 ma V CC =5V, 120mA per amplifier Thermal Resistance 70 C/W junction to backside (2 amplifiers per packaged part) Test Conditions: Z 0 =Ω, T A =25 C, Measured in Evaluation Circuit RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. support, contact RFMD at (+1) 336-67-70 or sales-support@rfmd.com. 1 of
Absolute Maximum Ratings Parameter Rating Unit Max Device Current (l D ) - Per amplifier, 2 amplifiers per packaged part 2 ma Max Device Voltage (V CC ) 6 V Max RF Input Power 100 mw Max Dissipated Power 10 mw Max Junction Temperature (T J ) 160 C Operating Temperature Range (T L ) - to + 5 C Max Storage Temperature 1 C ESD Rating - Human Body Model (HBM) Class 1B Moisture Sensitivity Level MSL 1 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I D V D <(T J -T L )/R TH, j-l Device Current (ma) 3 0 2 200 1 100 0 Device Current vs. Source Voltage - C 25 C 5 C 0 1 2 3 4 5 6 V S (V) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of support, contact RFMD at (+1) 336-67-70 or sales-support@rfmd.com.
MHz Application Circuit Data, VCC=5V, ID=2mA (Tested in Balanced Configuration shown in Application Circuit, tuned for Output 1P3) P1 vs. Frequency 25 Gain vs. Frequency 29 22 2 27 26 25 0. 0.5 0.9 0.95 0-5 -10-15 -20-25 - - - 0. 0.5 0.9 0.95 Input/Output Return Loss, Isolation vs. Frequency, T=25 C S11 S22 S12 Third Order Intercept vs. Tone Power Frequency = 0 MHz 5 10 15 20 25 c 19 16 13 10 0. 0.5 0.9 0.95 0. 0.5 0.9 0.95 - - - - -60 Third Order Intercept vs. Frequency (P OUT per tone = 11) 0 MHz Adjacent Channel Power vs. Channel Output Power -65-70 -75-0 15 16 17 1 19 20 21 22 P OUT per tone () Channel Output Power () IS-95, 9 Channels Forward support, contact RFMD at (+1) 336-67-70 or sales-support@rfmd.com. 3 of
1960MHz Application Circuit Data, VCC=5V, ID=2mA (Tested in Balanced Configuration shown in Application Circuit, tuned for Output 1P3) P1 vs. Frequency 20 Gain vs. Frequency 29 17 2 27 26 25 1.93 1.94 1.95 1.96 1.97 1.9 1.99 0-5 -10-15 -20-25 - - - 1.93 1.94 1.95 1.96 1.97 1.9 1.99 Input/Output Return Loss, Isolation vs. Frequency, T=25 C S11 S22 S12 Third Order Intercept vs. Tone Power Frequency = 1.96 5 10 15 20 25 c 14 11 5 1.93 1.94 1.95 1.96 1.97 1.9 1.99 Third Order Intercept vs. Frequency (P OUT per tone = 11) 1.93 1.94 1.95 1.96 1.97 1.9 1.99 - - - - -60 1960 MHz Adjacent Channel Power vs. Channel Output Power -65-70 -75-0 15 16 17 1 19 20 21 22 P OUT per tone () Channel Output Power () IS-95, 9 Channels Forward 4 of support, contact RFMD at (+1) 336-67-70 or sales-support@rfmd.com.
21MHz Application Circuit Data, VCC=5V, ID=2mA (Tested in Balanced Configuration shown in Application Circuit, tuned for Output 1P3) P1 vs. Frequency 20 Gain vs. Frequency 29 17 2 27 26 25 2.11 2.12 2.13 2.14 2.15 2.16 2.17 0-5 -10-15 -20-25 - - - 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Input/Output Return Loss, Isolation vs. Frequency, T=25 C S11 S22 S12 Third Order Intercept vs. Tone Power Frequency = 2.14 5 10 15 20 25 P OUT per tone () c 14 11 5 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.11 2.12 2.13 2.14 2.15 2.16 2.17 - - - Third Order Intercept vs. Frequency (P OUT per tone = 11) 21 MHz Adjacent Channel Power vs. Channel Output Power - -60-65 15 16 17 1 19 20 21 22 Channel Output Power () W-CDMA, 64 DPCH + Overhead support, contact RFMD at (+1) 336-67-70 or sales-support@rfmd.com. 5 of
Pin Function Description 1, 4 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor. 2, 3, 6, 7 GND Use via holes to reduceconnection to ground. Place vias close to ground lead inductance. 5, RF OUT/VCC RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications. The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. EPAD GND Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD. Recommended Land Pattern 0.00 [2.03] 0.1 [3.1] Plated-Thru Holes (0.015" Dia, 0.0" Pitch) Machine Screws 0.0 [1.27] Package Drawing 0.1 [3.56] 0.020 [0.51] 0.0 [7.62] Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. Note: XXXX represents the lot code DIMENSIONS ARE IN INCHES [MM] 6 of support, contact RFMD at (+1) 336-67-70 or sales-support@rfmd.com.
+ + SXA-331B(Z) MHz Application Schematic V CC RF IN Z=:, E Z=:, 1 2,3 SXA-331B 6,7 L2 Z=:, EL3 4 Z=:, 5 Z=:, Z=:, E EL3 L2 Ref. Des. Vendor Series MHz Evaluation Board Layout V CC MHz Ref. Des., R ohm MCH1 47pF, L2 Rohm MCH1 3.9pF, E R ohm MCH1 1000pF, R ohm TAJB104KLRH 0.1uF, 10% EL3 Rohm TAJB106K020R Rohm MCH1 Toko L60-FS 10uF, 10% 3.3pF, R1 1.2nH, ±0.3nH SIRENZA MICRODEVICES Balanced SOIC- Eval Board ECB-103109-A Vcc L2 Vcc Vendor Series MHz T oko L60-FS 33nH, 9.9 4.4 11 Sirenza Coupler AH03L R ohm MCR100J 100 Ohm, RF OUT 7 of support, contact RFMD at (+1) 336-67-70 or sales-support@rfmd.com.
1960MHz and 21MHz Application Schematic V CC RF IN Z=:, E 1 2,3 SXA-331B 6,7 Z=:, Ref. Des. 4 5 Z=:, Z=:, E Vendor Series 1960MHz and 21MHz Evaluation Board Layout V CC 1960 MHz 21 MHz Ref. Des., R ohm MCH1 22pF, 22pF, Rohm MCH1 1.2pF, 1.2pF, E R ohm MCH1 1000pF, 1000pF, R ohm TAJB104KLRH 0.1uF, 10% 0.1uF, 10% Rohm MCH1 1.0pF, 1.0pF, R1 Eval Board ECB-102363 Rev. A Balanced SOIC- Vcc Vcc Vendor Series RF OUT 1960 MHz 21 MHz T oko L60-FS 1nH, 1nH, 10.1 11 20.9 22. Sirenza Coupler Rohm MCR100J AM03M 100 Ohm, Sirenza Microdevices AM03M 100 Ohm, Part Symbolization The part will be symbolized with a SXA331B or SXA331BZ designator on the top surface of the package. Ordering Information Part Number Reel Size Devices/Reel SXA-331B 7 0 SXA-331BZ 7 0 of support, contact RFMD at (+1) 336-67-70 or sales-support@rfmd.com.