LH1510AAB/ AABTR/ AT. Pb Pb-free. 1 Form A Solid State Relay. Vishay Semiconductors

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LH151AAB/ AABTR/ AT 1 Form A Solid State Relay Features Isolation Test Voltage 53 V RMS Current-limit Protection Built-in High-reliability Monolithic output die Low Power Consumption Clean, Bounce-free Switching High Surge Capability Surface Mountable Lead-free component Component in accordance to RoHS /95/EC and WEEE /9/EC Agency Approvals UL1577, File No. E57 System Code H or J, Double Protection CSA - Certification 93751 BSI/BABT Cert. No. 798 DIN EN 77-5- (VDE88) DIN EN 77-5-5 pending FIMKO Approval Applications General Telecom Switching - On/off-hook - Ring Relay/ Dial Pulse - Ground Start/ Fault Protection Instrumentation - Automatic Tuning/Balancing - Flying Capacitor - Analog Multiplex Industrial Controls - Triac Predrivers - Output Modules S i1791 DIP S' SMD S DC 5 S' 1 3 Peripherals - Transducer Driver e3 Pb Pb-free Description The LH151 is a SPST normally open switch (1 Form A) that can replace electromechanical relays in many applications. The relay is constructed using a GaAlAs LED for actuation control and an integrated monolithic die for the switch output. The die, fabricated in a highvoltage dielectrically isolated technology, is comprised of a photodiode array, switch control circuity, and MOSFET switches. In addition, the relay employs current-limiting circuity enabling it to pass FCC 8.3 and other regulatory voltage surge requirements when overvoltage protection is provided. The LH151 is the only relay in the family that provides current limiting for unidirectional dc applications. Order Information Part LH151AAB LH151AABTR LH151AT Remarks Tubes, SMD- Tape and Reel, SMD- Tubes, DIP- Document Number 8381 Rev. 1.3, -Oct- 1

LH151AAB/ AABTR/ AT Absolute Maximum Ratings, T amb = 5 C Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Ratings for extended periods of time can adversely affect reliability. SSR Parameter Test condition Symbol Value Unit LED continuous forward current I F 5 ma LED reverse voltage I R 1 µa V R 8. V DC or peak AC load voltage I L 5 µa V L V Continuous DC load current - I L ma bidirectional operation Continuous DC load current - I L 35 ma unidirectional operation Peak load current (single shot) t = 1 ms I P 1) Ambient temperature range T amb - to + 85 C Storage temperature range T stg - to + 15 C Pin soldering temperature t = 1 s max T sld C Input/output isolation voltage V ISO 53 V RMS Output power dissipation (continuous) P diss 55 mw 1) Refer to Current Limit Performance Application Note 58 for a discussion on relay operation during transient currents. Electrical Characteristics, T amb = 5 C Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max Unit LED forward current, I L = 1 ma, t = 1 ms I Fon.95. ma switch turn-on LED forward current, V L = ± 15 V I Foff..85 ma switch turn-off LED forward voltage I F = 1 ma V F 1.15 1.7 1.5 V Output Parameter Test condition Symbol Min Typ. Max Unit ON-resistance ac/dc: I F = 5. ma, I L = 5 ma R ON. 11.7 15 Ω Pin (±) to (±) ON-resistance dc: I F = 5. ma, I L = 1 ma R ON 1.5 3.15 3.75 Ω Pin, (+) to 5 (±) Off-resistance I F = ma, V L = ± 1 V R OFF.5 8 GΩ Current limit ac/dc: Pin (±) to (±) Current limit dc: Pin, (+) to 5 (±) I F = 5. ma, V L = ± 5. V, t = 5. ms I F = 5. ma, V L =. V, t = 5. ms I LMT 3 38 5 ma I LMT 73 9 ma Off-state leakage current I F = ma, V L = ± 1 V I O.3 na I F = ma, V L = ± V I O 79. 1. µa Document Number 8381 Rev. 1.3, -Oct-

LH151AAB/ AABTR/ AT Parameter Test condition Symbol Min Typ. Max Unit Output capacitance Pin to I F = ma, V L = 1. V C O 7.75 pf I F = ma, V L = 5 V C O 1.8 pf Switch offset I F = 5. ma V OS.17 µv Transfer Parameter Test condition Symbol Min Typ. Max Unit Capacitance (input-output) V ISO = 1. V C IO.7 pf Turn-on time I F = 5. ma, I L = 5 ma t on.5. ms Turn-off time I F = 5. ma, I L = 5 ma t off.7. ms Typical Characteristics (Tamb = 5 C unless otherwise specified) 1 Load Current (ma) 1 1 8 I Fon = 5.tomA I Fon =. ma I Fon =3. ma I Fon =. ma LED Forward Current (ma) 1 8 T=- C ilh151at_ - - 8 Ambient Figure 1. Recommended Operating Conditions ilh151at_.5 1 1.5 LED Forward Voltage (V) Figure 3. LED Forward Current vs. LED Forward Voltage LED Forward Voltage (V) 1. 1.5 1. 1.3 1. ilh151at_1 IF=1mA 1.1 IF=mA IF=5mA 1 - - 8 IF=5mA IF=mA IF=1mA Figure. LED Voltage vs. Temperature LED Reverse current (µa) ilh151at_3 1 8 T=- C 1 3 8 8 LED Reverse Voltage (V) Figure. LED Reverse Current vs. LED Reverse Voltage Document Number 8381 Rev. 1.3, -Oct- 3

LH151AAB/ AABTR/ AT 7 1 5 3 1 T=- C DC Load Currentt (ma) 8 T=- C ilh151at_ 1 3 5 LED Current (ma) Figure 5. LED Current vs. Load Voltage ilh151at_7 1 3 5 Figure 8. DC Load Current vs. Load Voltage LED Current for Switch Turn-On (%), ilh151at_5 8 - - - - - 8 Figure. LED Current for Switch Turn-on vs. Temperature DC Current Limit (%) change, norm. @5 C ilh151at_8 5 3 15-15 -3 IF=5 ma T=5ms VL=V -5 - - 8 Figure 9. DC Current Limit vs. Temperature LED Dropout Voltage (V) 1. 1. 1.1 1.1 1.8 IL=1mA Change in Current Limit (%), 3 1-1 - IF=5 ma T=5ms VL=5V 1. - - 8 ilh151at_ Figure 7. LED Dropout Voltage vs. Temperature ilh151at_9-3 - - 8 Figure 1. Current Limit vs. Temperature Document Number 8381 Rev. 1.3, -Oct-

LH151AAB/ AABTR/ AT 5 9 Load Current (ma) 3 T=- C Capacitance (pf) 75 5 3 1 15 ilh151at_1 1 3 5 Figure 11. Load Current vs. Load Voltage ilh151at_13 8 1 Applied Voltage (V) Figure 1. Switch Terminal Capacitance vs. Applied Voltage.1 Change in On-Resistance (%), 3 1-1 - IF=5mA IL=5mA Insertion Loss (db).1.1.8... RL=ıΩ ilh151at_11-3 - - 8 Figure 1. ON-Resistance vs. Temperature ilh151at_1 1 1 3 1 1 5 Frequence (Hz) Figure 15. Insertion Loss vs. Frequency 1 1. ac/dc R-on Variation (%), norm. at I F =5mA 8 IL=5mA Leakage Current (na) 1. 1. 1. T=7 C T=5 C ilh151at_1-8 1 1 LED Current (ma) Figure 13. Variation in ON-Resistance vs. LED Current ilh151at_15.1 8 1 1 Figure 1. Leakage Current vs. Applied Voltage Document Number 8381 Rev. 1.3, -Oct- 5

LH151AAB/ AABTR/ AT Isolation (db) 1 1 8 VP=1V RL=5Ω ı Switch Offset Voltage (µv) 3.5 3..5. 1.5 1..5 IF= 5. ma ilh151at_1 13 1 15 1 Frequency (Hz) ilh151at_19 3 5 7 Ambient 8 9 Figure 17. Output Isolation Figure. Switch Offset Voltage vs. Temperature 5. Load Current (µa) 3 1 IF=mA IL<51uA T=- C Switch Offset Voltage (µv).5..3..1 ilh151at_17 5 1 15 5 3 Figure 18. Switch Breakdown Voltage vs. Load Current ilh151at_ 5 1 15 5 LED Forward Current (ma) Figure 1. Switch Offset Voltage vs. LED Current Change in Breakdown Voltage (%), ilh151at_18 9 3-3 - IF=mA IL<51uA -9 - - 8 Figure 19. Switch Breakdown Voltage vs. Temperature Change in Turn-On Time (%), ilh151at_1 1 8-8 -1 IF=5mA IL=5mA - - - 8 Figure. Turn-on Time vs. Temperature Document Number 8381 Rev. 1.3, -Oct-

LH151AAB/ AABTR/ AT 3 Change in Turn-Off Time (%), 1-1 - IF=5mA IL=5mA ilh151at_ -3 - - 8 Figure 3. Turn-off Time vs. Temperature 1.8 Turn-On Time (ms) 1. 1.. T=- C ilh151at_3 IL=5mA. 1 3 5 LED Forward Current (ma) Figure. Turn-on Time vs. LED Current 1..9 T=- C Turn-Off Time (ms).8.7..5 IL=5mA ilh151at_. 1 3 5 LED Forward Current (ma) Figure 5. Turn-off Time vs. LED Current Document Number 8381 Rev. 1.3, -Oct- 7

LH151AAB/ AABTR/ AT Package Dimensions in Inches (mm) DIP 3 1 Pin One ID..5 (.5).8 (.3) ISOMethodA 5 i1781.39 (1.) Min. Typ.. (.55).18 (.5).33 (8.7).335 (8.5).15 (3.81).13 (3.3). (.51) Min..35 (.9).31 (.8).1 (.5) Typ..3 (7.) Typ. 18 Typ..1 (.35).1 (.5).37 (8.8).3 (7.).15 (3.81).11 (.79) Package Dimensions in Inches (mm) SMD.33 (8.71).335 (8.51) Pin one I.D..3 (.7).5 (.5).8 (.3).1 (.5) R.1 (.5).315 (8.) min.35 (11.5).7 (1.78). (1.5) ISO Method A i178.39 (.99).5 (1.33).8 (1.) min..15 (3.81).13 (3.3).1 (.5).5 (1.7) typ..98 (.5). (.1). (1.1). (.58).395 (1.3).375 (9.3).3 (7.) typ. 18.315 (8.) min. 3 to 7.1 (.31).8 (.) 8 Document Number 8381 Rev. 1.3, -Oct-

Ozone Depleting Substances Policy Statement LH151AAB/ AABTR/ AT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/5/EEC and 91/9/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-75 Heilbronn, Germany Telephone: 9 ()7131 7 831, Fax number: 9 ()7131 7 3 Document Number 8381 Rev. 1.3, -Oct- 9